LED19-PR
Abstract: No abstract text available
Text: LED19-PR v 2.0 24.11.2014 Description LED19-PR series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 1.95 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package, with a parabolic reflector and a without window on request .
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LED19-PR
LED19-PR
150mA
200mA
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Product line
Abstract: No abstract text available
Text: Mid-IR Products Product Line Overview Mid-Infrared Light Emitting Diodes and Photodiodes We offer: • • • • • Standard LEDs Flip-Chip bounded LEDs Multi Chip LEDs PDs LED drivers and PD amplifiers Standard LEDs LED chips with circular or ring top contact
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LED18
LED19
LED20
LED21
LED22
LED23
LED29
LED34
LED35
LED36
Product line
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LED43
Abstract: No abstract text available
Text: LED43 v 2.0 24.11.2014 Description LED43 series are fabricated from narrow band-gap InAsSb/InAsSbP heterostructures lattice matched to InAs substrate. This Mid-IR LED provides a typical peak wavelength of 4.15 µm and optical power of typ. 0.01 mW qCW. It comes in TO-18 package a with a glass window.
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LED43
LED43
150mA
200mA
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LED39-PR
Abstract: No abstract text available
Text: LED39-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.90 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.
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LED39-PR
LED39-PR
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LED39
Abstract: No abstract text available
Text: LED39 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.90 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.
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LED39
LED39
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MB90675-Evaluation
Abstract: f80100h mb675 fa0157 A-1200 dbr-9 LMC907A MB90675 JP24 12 pin 4digit 7 segment display
Text: F²MC-16L Series MB90675 Series Evaluation Board USER MANUAL Printed: 12. August 1996 FUJITSU MB90675-Evaluation Board - User Manual Copyright 1996 Fujitsu Mikroelektronik GmbH. All Rights Reserved. The information in this document has been carefully checked and is believed to be entirely
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MC-16L
MB90675
MB90675-Evaluation
f80100h
mb675
fa0157
A-1200
dbr-9
LMC907A
JP24
12 pin 4digit 7 segment display
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zelio plc wiring diagram cable
Abstract: photovoltaic cell ana 650 2.5 kva inverter diagrams ELEVATOR LOGIC CONTROL PLC APC SMART-UPS CIRCUIT DIAGRAM MDG99603 MD1AA730PE SOLAR INVERTER 1000 watts circuit diagram 100 kva UPS APC zigbee door controller
Text: Technical education Educational solutions Catalogue 2013 - 2014 Learning a job is fine. Learning the future is better. In the future, today's businesses are going to evolve into an overall expertise that covers all types of energy. For those working in, this represents both a real
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ZZ4781
zelio plc wiring diagram cable
photovoltaic cell ana 650
2.5 kva inverter diagrams
ELEVATOR LOGIC CONTROL PLC
APC SMART-UPS CIRCUIT DIAGRAM
MDG99603
MD1AA730PE
SOLAR INVERTER 1000 watts circuit diagram
100 kva UPS APC
zigbee door controller
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Untitled
Abstract: No abstract text available
Text: LED23 rev 2.0 29.04.2015 Description LED23 series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 2.35 µm and optical power of typ. 0.8 mW qCW. It comes in TO-18 package, with cap and without window on request .
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LED23
LED23
150mA
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LED21
Abstract: No abstract text available
Text: LED21 v 1.0 12.02.2014 Description LED21 series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 2.15 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package a with a glass window.
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LED21
LED21
150mA
200mA
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LED19
Abstract: No abstract text available
Text: LED19 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions GaInAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED19
LED19
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LED20-PR
Abstract: No abstract text available
Text: LED20-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.05 µm series are based on heterostructures grown on GaSb substrates by MOCVD. GaInAsSb is used in the active layer. Wide band gap solid solutions AlGaAsSb are used for good electron confinement.
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LED20-PR
LED20-PR
LED39-PR
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LED38
Abstract: No abstract text available
Text: LED38 v 2.0 01.12.2014 Description LED19-PR series are fabricated from narrow band-gap InAsSb/InAsSbP heterostructures lattice matched to InAs substrate. This Mid-IR LED provides a typical peak wavelength of 3.75 µm and optical power of typ. 30 µW qCW. It comes in TO-18 package, with cap and without window on request .
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LED38
LED19-PR
LED38
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MDK150
Abstract: md1p LR3000
Text: Chapter 5 LR32D04 DRAM Data Buffer This chapter describes the LR32D04 DRAM Data Buffers. Chapter 5 is organized into these sections: • General Description ■ Signal Definitions ■ Data Buffer Configurations ■ Specifications Because the operation of the LR32D04 is closely tied to the LR3203
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LR32D04
LR3203
LR3203,
LR32D
MDK150
md1p
LR3000
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C1A13
Abstract: LR3000 DRAM controller dram memory 256kx4 lad2 5v LB03 LR3202A LR3203 LR3205 LR32D04
Text: Chapter 4 LR3203 DRAM Controller This chapter describes the LR3203 DRAM Controller. Chapter 4 is orga nized into these sections: • General Description ■ Concepts ■ Configuring the LR3203 ■ Signal Definitions ■ L-Bus Interface ■ DRAM Configurations
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LR3203
LR3203
LR32D04
C1A13
LR3000
DRAM controller
dram memory 256kx4
lad2 5v
LB03
LR3202A
LR3205
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LD11
Abstract: LD12 LR3203 LR3205 LR32D04 LR3000
Text: Chapter 5 LR32D04 DRAM Data Buffer This chapter describes the LR32D04 DRAM Data Buffers. Chapter 5 is organized into these sections: • General Description ■ Signal Definitions ■ Data Buffer Configurations ■ Specifications Because the operation of the LR32D04 is closely tied to the LR3203
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LR32D04
LR3203
LR3203,
LD11
LD12
LR3205
LR3000
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Untitled
Abstract: No abstract text available
Text: A COMPANY OF MODELS MM22 and MM24 Rack and Panel Connectors Military, MIL-C-28748/7,/8 Qualified and Com m ercial Microminiature Rectangular with Optional Hoods FE A T U R E S MMS • Qualified to MIL-C-28748/7,/8 • Solder cup contacts mm MMP Solder Cup
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MIL-C-28748/7
SK030
SK2030
SK2035
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IR3203
Abstract: LR3000
Text: Chapter 4 LR3203 DRAM Controller This chapter describes the LR3203 DRAM Controller. Chapter 4 is orga nized into these sections: • General Description ■ Concepts ■ Configuring the LR3203 ■ Signal Definitions ■ L-Bus Interface ■ DRAM Configurations
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LR3203
LR32D04
IR3203
LR3000
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