ME-WF Series
Abstract: Sanyo me-wf MV-WG MV-WG Series mv-wf series mv-wf
Text: Aluminum Electrolytic Capacitors ME-WF Series Super Low ESR • Features ・Super Low ESR and high ripple current at high frequency. ・MV-WF series reduced high-frequency ESR to 25～40% as compared with MV-WG series. ■ Specifications Items Operating temperature range
|
Original
|
120Hz/20
120Hz/20
-25/Z
-40/Z
120Hz
1000F
100kHz,
ME-WF Series
Sanyo me-wf
MV-WG
MV-WG Series
mv-wf series
mv-wf
|
PDF
|
FLL57MK
Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.
|
Original
|
FLL810IQ-4C
FLL600IQ-2
FLL400IP-2
FLL300IL-1
FLL200IB-1
FLL300IL-2
FLL200IB-2
FLL300IL-3
FLL200IB-3
FLL57MK
ELM7785-60F
FLL400IP2
flc107
FLK027WG
FLC057WG
FLL357
fll177
FLL357ME
|
PDF
|
FMC16LX
Abstract: MB90F462 FMC-16LX MB90F387 MC-16LX MB90F4
Text: FUJITSU SEMICONDUCTOR ＣＯＮＴＲＯＬＬＥＲ ＭＡＮＵＡＬ XXXX-XXXX-XX-E F²MC-16 FAMILY 16-BIT MICROCONTROLLER An Additional Manual for the Softune Linkage Kit F²MC-16LX Standby Mode Transition Instruction Check FUJITSU LIMITED PREFACE •Objectives and Intended Readership
|
Original
|
MC-16
16-BIT
MC-16LX
trademarksF90007
00F9000D
flnk907s
MB90F387
00F90001
00F90003
FMC16LX
MB90F462
FMC-16LX
MB90F4
|
PDF
|
Panjit p6smb
Abstract: P6SMB10 P6SMB10A P6SMB11 P6SMB11A
Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.5 to 214 Volts PEAK PULSE POWER 600 Watts SMB/DO-214AA Unit: inch mm FEATURES .083(2.11) .185(4.70) .160(4.06) .083(2.13) .096(2.44) .012(.305) .006(.152) MECHANICAL DATA • • • • •
|
Original
|
SMB/DO-214AA
2002/95/EC
27voltage-suppressors
Panjit p6smb
P6SMB10
P6SMB10A
P6SMB11
P6SMB11A
|
PDF
|
yx 861
Abstract: No abstract text available
Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 6.8 to 550 Volts BREAK DOWN VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction
|
Original
|
2002/95/EC
DO-214AA
MIL-STD-750
yx 861
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 6.8 to 550 Volts BREAK DOWN VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction
|
Original
|
2002/95/EC
DO-214AA
MIL-STD-750
|
PDF
|
P6SMB10
Abstract: P6SMB10A P6SMB11 P6SMB11A P6SMB12
Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 6.8 to 550 Volts BREAK DOWN VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction
|
Original
|
2002/95/EC
DO-214AA
MIL-STD-750
P6SMB10
P6SMB10A
P6SMB11
P6SMB11A
P6SMB12
|
PDF
|
yx 861
Abstract: No abstract text available
Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 6.8 to 550 Volts BREAK DOWN VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction
|
Original
|
2002/95/EC
DO-214AA
MIL-STD-750
yx 861
|
PDF
|
L422
Abstract: 93422 93L422
Text: Order this data sheet by 9342ZD MOTOROLA SEMICONDUCTOR TECHNICAL DATA TTL 256 x 4-Bit Random Access Memory W ‘s$l:., “’:P$*.V? .‘ ,<$}.,3, ~~,}, >,., The 93422 Series are 1024-bit ReadWrite RAMs, organized 256 words by 4 bits, designed for high performance main memory and control storage
|
Original
|
9342ZD
1024-bit
MK145BP,
L422
93422
93L422
|
PDF
|
EOH-KUMUPB0-GG
Abstract: ta530 HRS CIF
Text: Spec No. Date Page Ver. A-TH-044-00 2008/11/25 1/16 A-00 Super Top LED STL / E5 Series PART NO. : EOH-KUxUPB0-GG Technical Description STL /E5 series is EOI’s newest generation high power LED package. The package is designed to produce high light output with good reliability performance at very high driving current, and allows
|
Original
|
-TH-044-00
EOH-KUMUPB0-GG
ta530
HRS CIF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P4SMAJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.0 to 220 Volts PEAK PULSE POWER 400 Watts SMA/DO-214AC Unit: inch mm FEATURES • For surface mounted applications in order to optimize board space. .114(2.90) .098(2.50) • Low profile package
|
Original
|
SMA/DO-214AC
2002/95/EC
DO-214A-suppressors
|
PDF
|
S1D13305
Abstract: graphic intel 8085A instruction set s1d13305f00b1 S1D13305F00A interfacing of RAM and ROM with 8085 S1D13305F 8085 Manual S1D13305F00B intel 8085 instruction set
Text: MF1167-02 LCD Controller ICs S1D13305 Series Technical Manual No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
|
Original
|
MF1167-02
S1D13305
graphic
intel 8085A instruction set
s1d13305f00b1
S1D13305F00A
interfacing of RAM and ROM with 8085
S1D13305F
8085 Manual
S1D13305F00B
intel 8085 instruction set
|
PDF
|
reliability Va12
Abstract: S1D13305 S1D13305F00 S1D13305F
Text: MF1167-03 LCD Controller ICs S1D13305 Series Technical Manual No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
|
Original
|
MF1167-03
S1D13305
E-08190
reliability Va12
S1D13305F00
S1D13305F
|
PDF
|
S1D13305
Abstract: D 8085 AHC Epson-S1D13305 s1d13305f
Text: MF1167-03 LCD Controller ICs S1D13305 Series Technical Manual No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
|
Original
|
MF1167-03
S1D13305
E-08190
D 8085 AHC
Epson-S1D13305
s1d13305f
|
PDF
|
|
|
BPX38
Abstract: flux meter glass lens phototransistor
Text: SIEMENS AKTIENGESELLSCHAF M7E D fl23SbOS GG57500 H « S I E G SIEMENS BPX38 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm Maximum Ratings Operating and Storage Temperature ( T ^ , T ^ . Soldering Temperature (distance from soldering joint to package ¿2 mm)
|
OCR Scan
|
BPX38
fi23SbOS
D027501
flux meter
glass lens phototransistor
|
PDF
|
CK 66 94V-0
Abstract: CK 66 UL 94V-0 ml 94v-0 CK 66 3 94V-0
Text: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRONIC AND ITS SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION
|
OCR Scan
|
D5927,
CBD7W2F37S600X
SK3784
CK 66 94V-0
CK 66 UL 94V-0
ml 94v-0
CK 66 3 94V-0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Metallized Polypropylene Capacitor for Motor Running & Lighting Ballast ECWFJfc ECWF Series LTt&ft;? A compact, light-weight capacitor designed for use in motor running and in electrical equipment such as lighting, etc. Non-inductive type using metallized polyplopylene
|
OCR Scan
|
29705JA
29805JA
29905JA(
29106JA(
F33105JA
330VAC,
33205JA
33305JA
33405JA
33505JA
|
PDF
|
Halbleiterbauelemente DDR
Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
Text: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs temperatur von 25 °C angegeben.
|
OCR Scan
|
DOR102
Halbleiterbauelemente DDR
GAZ17
diode sy-250
"halbleiterwerk frankfurt"
sal41
diode sy-170
SF 127
diode say17
Halbleiter-Bauelemente DDR
SY 170
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUNCON o > Q ?• g i. 3 m a • 10 5 t!, 2,000 to 7,000hrs. • Solvent proof within 5 minutes) 3 * n ■ Specifications Item s Specifications i Condition Rated vo lta g e (V) - 6 .3 10 16 25 35 CE-BE Surge vo lta g e (V) 8 .0 13 20 32 44 CE-BD Category temperature range CP)
|
OCR Scan
|
000hrs.
120HZ/201C
Z/Z20TI
Z/Z20t
16X35
16X25
16x21
|
PDF
|
SK2756
Abstract: No abstract text available
Text: SK2758 POSm tOMC M 0U5TNES BELIEVES t h e d a ta o n 1H B DRAWING TO BE RELHBLE. SM C E THE TECHNICAL MPORUKnON IS OVEN FREE OF CHARGE. THE USER EMPLOYS SUCH INFORMATION AT H IS OWN DISCRETION AND RBK. POSITRON1C M DU5TRES A S S IlffS NO RESPONSE UTY FOR RESULTS OBIMNED OR DAMAGES
|
OCR Scan
|
SK2758
SK2756
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUNCON Aluminum Electrolytic Capacitors • 1051C, 2.500 to 10.OOOhrs. • Solvent proof within 5 minutes • Specifications Items Condition Specifications Rated vo lta g e (V) - 6 .3 10 16 Surge vo lta g e (V) Room tem perature 8 .0 13 20 Category temperature range fC )
|
OCR Scan
|
1051C,
120HZ/20TC
120HZ/201C
10X12
10X16
10X22
16X25
16X31
16X35
18X35
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM53051 Series 262,144-Word x 4-Bit Frame Memory • DESCRIPTION HM53051P Series HM53051P is a 262,144-word x 4-bit frame memory, using the most advanced 1.3 jjim CMOS processes. It performs serial access by an internal address genera tor. It offers a high-speed cycle time of 45 ns or 60 ns min . As input data and out
|
OCR Scan
|
HM53051
144-Word
HM53051P
32-word
|
PDF
|
BXA30
Abstract: WS 90 XL750 XL50 NFN25
Text: AC/DC PRODUCT SELECTION CHART BY FEATURES CO ¡S u_ 111 III 00 SWITCHERS AND LINEARS SWITCHERS IAJ OPEN FRAME ENCUOSED ENCAPSULATED Universal Input Conventional 115/220 Input Universal Input Conventional 115 or 220 Input Conventional 115 or 220 Input One model works
|
OCR Scan
|
HL1500A
XL750
DPF1000
DPF600
HL1000
XL750
XL450
NFS350
ULT350
PM600
BXA30
WS 90
XL50
NFN25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM51W17800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-275C Z Rev. 3.0 Jul. 5, 1996 Description The Hitachi HM51W17800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800B offers
|
OCR Scan
|
HM51W17800B
152-word
ADE-203-275C
28-pin
ns/70
|
PDF
|
