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    MEL709 Search Results

    MEL709 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MEL709 Micro Electronics NPN SILICON PHOTO TRANSISTOR Scan PDF
    MEL709 Micro Electronics Semiconductor Device Data Book Scan PDF
    MEL709D Micro Electronics NPN SILICON PHOTO TRANSISTOR Scan PDF

    MEL709 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR 2341

    Abstract: xp950nm
    Text: CRO MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 5mm light rejective epoxy package. This device is suitable for use in a light sersor of the industial


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    PDF MEL709D MEL709D 100mA 200mW 950nm 100pA 950nm. TRANSISTOR 2341 xp950nm

    G1815

    Abstract: g181 LHC-100 MEL709
    Text: MEL709 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3/4 5mm water clear package. This device is suitable for use in a light sensor of the industrial control application.


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    PDF MEL709 100mA 200mW -55to MEL709-A 100jk 100/i 100aA of2854Â G1815 g181 LHC-100

    Untitled

    Abstract: No abstract text available
    Text: MICRO ELECTRONICS MIE LT» 1,0*11700 D 0000=10=1 3 HMEHK MEL709D NPN PLANAR PHOTO-TRANSISTOR The MEL709D Is silicon phototransistor with external base connection and built in a standard T-l 3/4 5mm0 light rejective filter epoxy package. This device is suitable for use in a light


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    PDF MEL709D MEL709D 100mA 200raW 100SC

    transistor r06

    Abstract: MEL709
    Text: CRÛ 1T1UJU / W NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3/4 5mm water clear package. This device is suitable for use in a light sensor of the industrial control


    OCR Scan
    PDF MEL709 100uA MEL709-A of2854Â 6S477 Nov-99 transistor r06

    MEL709D

    Abstract: No abstract text available
    Text: MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION 04.98 0.196 MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. Ali dimension in mm(inch) No Scale ToL : +/-0.3mm r0.7(0.03)


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    PDF MEL709D 200mW 950nm* 950nm.

    MEL709D

    Abstract: TB 006 sec 73 s
    Text: CKO MÜL'/ÜVLf NPN SILICON PHOTO TRANSISTOR DESCRIPTION *4.98 0.196 MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. 87 (0.34) A ll dim ension in m m (inch) No Scale


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    PDF MEL709D 950nm. TB 006 sec 73 s

    MAL100

    Abstract: MEL12 CL138 MEL31 MEL32 transistor case To 106 FPT100 FPT100A FPT100B FPT110
    Text: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30


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    PDF CL138 O-106 FPT100 O-106 FPT100A FPT100B FPT110 FPT110A MAL100 MEL12 MEL31 MEL32 transistor case To 106

    MEL12

    Abstract: MAL100 transistor case To 106 mel32 photo transistor CL138 FPT100B MEL11 MEL11A FPT100 FPT110
    Text: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30


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    PDF CL138 O-106 FPT100 O-106 FPT100A FPT100B FPT110 FPT110A MEL12 MAL100 transistor case To 106 mel32 photo transistor MEL11 MEL11A

    MEL12

    Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
    Text: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A


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    PDF CL138 O-106 FPT100 FPT100A FPT100B FPT110 FPT110A O-106F FPT110B MEL12 MAL100 MEL31 MEL32 mel32 photo transistor MEL11

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357

    L303A

    Abstract: DL78 L 31A MA1515 EL79D
    Text: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a


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    PDF ML303 ML303B ML308 ML308A L-303a -308C MEL78 MEL78D MEL79 EL79D L303A DL78 L 31A MA1515

    Untitled

    Abstract: No abstract text available
    Text: Pin Photo Diodes TYPE NO. X.p nm ML303 ML308 940 940 SENSITIVITY (nA/lx) 50 25 Id H MAX (mW/cm1) (nA) 5 1 30 30 VR (V) 10 10 t«lf TYP TYP (ns) (ns) 50 50 50 50 PACKAGE CASE NO. Side On Type Black Plastic 1-77 1-78 Photo Transistor TYPE NO. MALI 00 MAH 100


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    PDF ML303 ML308 MEL78 MEL80 MEL79 MEL79D MEL709 O-18L O-18H