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    TAIYO YUDEN HMF212B7103KGHT

    CAP CER 10000PF 100V X7R 0805
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    TAIYO YUDEN TMF212B7103MGHT

    CAP CER 10000PF 25V X7R 0805
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    TAIYO YUDEN UMF212B7223KGHT

    CAP CER 0.022UF 50V X7R 0805
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    TAIYO YUDEN EMF212AB7475KGHT

    CAP CER 4.7UF 16V X7R 0805
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    TAIYO YUDEN EMF212B7474KGHT

    CAP CER 0.47UF 16V X7R 0805
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    MF212 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MF212 Zarlink Semiconductor 50 MHz Half Duplex Module (880nm) Original PDF

    MF212 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    880NM

    Abstract: MF212 120731-1
    Text: MF212 High Performance Duplex DS5453 ISSUE 1 May 2001 Ordering Information MF212 MF212 MF212 MF212 MF212 11841.11 TO-46 Package 12073.11 ST Housing 13052.11 SC Housing 12015.11 SMA Housing 13016.11 FC Housing ST SC SMA FC Note: Rated Fiber coupled power apply only on the TO-46 package,


    Original
    MF212 DS5453 880NM MF212 120731-1 PDF

    MIL-C-83513

    Abstract: 26AWG26 36wire
    Text: The Interconnect Solution Source Filtered Cable Connectors MF-222-015-261-22WS-CF3 .050" Rugged Metal MF MF-212-015-145-4100-CF6 PLUG: RECEPTACLE: PLUG MF-212-015-145-4100-CF6 MF-222-015-261-22WS-CF3 RECEPTACLE SERIES MF .050" Rugged Metal I/O Connector NOTE: MF mates with MK, ML, MM, MN receptacles


    Original
    MF-222-015-261-22WS-CF3 MF-212-015-145-4100-CF6 MF-212-015-145-4100-CF6 electr12" MIL-C-83513 26AWG26 36wire PDF

    capacitor 1000 MF

    Abstract: MF-222-015-261-22WS-CF3
    Text: The Interconnect Solution Source Filtered Cable Connectors MF-222-015-261-22WS-CF3 .050" Rugged Metal MF MF-212-015-145-4100-CF6 PLUG: RECEPTACLE: PLUG MF-212-015-145-4100-CF6 MF-222-015-261-22WS-CF3 RECEPTACLE SERIES MF .050" Rugged Metal I/O Connector NOTE: MF mates with MK, ML, MM, MN receptacles


    Original
    MF-222-015-261-22WS-CF3 MF-212-015-145-4100-CF6 MF-212-015-145-4100-CF6 capacitor 1000 MF MF-222-015-261-22WS-CF3 PDF

    transistor NEC K 946

    Abstract: C947 BU x460 2SC3618
    Text: — S7 • $ /— h '> > ; = ! > t . 9 h S ilic o n T ra n s is to r 2SC3618 N 2SC 3618Ü , P N X t 0 ^ + 7 '> ; i / ^ ' > y ~7" '] "/ Y l C m A ' B ' < - v ' r - y ^ M m ^ W 7 > y X ? T", =1 > h h = 7 7 . 9 ^ - {i : mmj K 7 -i 1.5 + 0.1 M # 3 _ O h p E i ' ^ i 9 ÿ i3 ' C i s i l' ' ' o


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    2SC3618 2SC3618IÃ OT-89) PWS10 Cycled50 X108-01 transistor NEC K 946 C947 BU x460 PDF

    PA1454H

    Abstract: IPA1454
    Text: zr — ^ • > — C o m p o u n d P o w e r T ra n s is to r AR R A Y iiPA1454 /^ P A 1 4 5 4 tt 4 * Jf - r t ^ N P N l'7 > '> 'X $ 7 U 'iT , 7 "U > ^ • m m mii :m m £ -f 7 ° ^ -f 2 • 7 7 7 V 5 <J • E C R f Î C D ig lit ^ f ? ^ , VTR • 7 V 4 .0


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    uPA1454 PA1454H IPA1454 PDF

    7974a

    Abstract: 2SD2403
    Text: ïr — ^ — h '> U =1 > h Silicon Transistor 2SD2403 N P N itf^ v T ^ u ^ v U ju r a « : * « « , 2 S D 2 4 0 3 t t /J 't ë fl» a a* 6 U W x '- ÿ ^ ï - * m m z i> ' p m m x ' f v i - x r m t •# U T * U , D C / D C w m m e : m m ) • K 7 < / * £ iî lC » l? T o


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    2SD2403 2SD2403U 7974a 2SD2403 PDF

    2SB1318

    Abstract: BH rn transistor 3Fp transistor
    Text: zr— S • — K NEC ^ Silicon P o w e r Transistor 2SB1318 PNPI ’J=l> m « W t : mm 7.0 MAX. 1-2 o y — *J > h y ^ f â iC O t z & y , o S i t § Ë Â S^C I , (T a L Ä * M S V c E (s a t ) ~ c ~ t o = 25 °C ) B& g -§§- ¥ /E fï a V 9 9 • '•'i — X fai 16 Eh


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    2SB1318 -100n 2SB1318 BH rn transistor 3Fp transistor PDF

    transistor DK qj

    Abstract: 2SK1587 JE 04 DIODE Z5
    Text: 52— & N E • $ /— h MOS M O S Field E ffe ct T ran sis to r C 2 MOS 2SK1587 i , ^ 'y f 'jïŒ S 1 K 5 8 7 FET n m m ( ^ - f i : mm i§ g g j^ -7 V )N MOS F E T f t o ^ MO S F E T l i t > m a w i& < , T ^ S f c à ò , V l / - , i) « a 1. 5 ± 0.1


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    2SK1587 2SK1587 transistor DK qj JE 04 DIODE Z5 PDF

    04 NG 537

    Abstract: 2SK1960 transistor w bh 212 7876A
    Text: NEC M O S F ie ld E ffe c t T ra n s is to r 2SK1960 N M O S F ET 2SK19 60 Ü1. 5 V I E B j ^ y w N ^ ^ / W f f é ^ M O S F E T T ' h n , f t i f .- :- .i;< # ;-:•■ è , ^"/ Y ^ t k v -f r « i t lytis <£ £ # H t /ÿ s £ & : mm) 4.5 ± 0.1 £ > !? * *


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    2SK1960 2SK1960Ã Ht111 04 NG 537 2SK1960 transistor w bh 212 7876A PDF

    2SB1300

    Abstract: PH 06
    Text: • 5 /— h Silicon T ran sis to r 2SB1300 is T J U M > ' =1V P N P ic f f i j a a s « * * * « *? j : c r + » * ; * < 4# v * >?m - ^ ii - f t V CE ( s a t ) ~ V 0.42 < , Ic(DO — TYP. ( @ I c /I B= — 3.0 L # ' & A S O ^ 'J A , I c(pulse)= — 5 . 0


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    2SB1300 2SD195U SC-43B CyclesS50 2SB1300 PH 06 PDF

    C947

    Abstract: NF 022 NEC IEI-620 2SK680A T460 TC-7831A transistor NEC K 946
    Text: Mos M O S Field E ffe c t T ran sis to r 2SK680A MOS F E T 2SK680A i, N ^ ^ / H IO ^ M O S iz x £ F E T T ', -y f> fs < , ^ < n K y # m m o j i à t i r ^ ò X ^ i ò , * (W 5 V ?1 3 U C Ì • mm Tto - ? , 7 ? 1.5 ±0.1 A tr o f à j - y f à t r Ì ' C t o


    OCR Scan
    2SK680A 484SiJ! C947 NF 022 NEC IEI-620 2SK680A T460 TC-7831A transistor NEC K 946 PDF

    2SK2110

    Abstract: No abstract text available
    Text: t * — •£? • S ' — NEC h h ^ ^ M O S Field Effect Transistor 2SK2110 2 S K 2 1 1 0 & N 3 1 -V Z J U t i i M O S F E T V S U , « fc : mm 5 V H ;Ü ^ IC < 7 )fc ti r t C J: « * < •> 51> ^ " i i T ' î o *> *£ Î5 W g ;< , * < * y 3 1> 7 ìl]g fc ìli,'£ ò & ,


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    2SK2110 2SK2110 PDF

    pa1434

    Abstract: 5504 HPA1434H
    Text: zr — $ • v — Î S ' n / \ 0r7 — C o m p o u n d P o w e r T r a n s i s t o r A R R A Y iiPA1434 N P N X + - W W g v /,P A 1 4 3 4 li 4 H i l ^ l c N P N h 7 > y ' ^ $ 7 K T , ' j 3 > 7 #IJ > £ • h 7 > y 7 ^ m ii : 7 K mm; 2 < 7°7 < £ • 7 7- 7 v 5. U • E C R ^ C D Î i X l l ^ S î ^ , V T R • 7 v


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    PDF

    tlu 011

    Abstract: 2SB1571
    Text: T — — b ' > U 3 > h 7 > V X $ S ilic o n T r a n s is to r 2SB1571 PNPX V =J > fé J S ïÆ 2 S B 1 5 7 1 4' i f f f iif c it 'Î i, 6 ^ ü T *5 U h -7 > v * $ * i t J , D C / D C * t ì : mm 1 .5 ± # 0 .1 3 & — o z i U ? ^ f ê Ÿ D ^ Œ A ^ Ê t 'o


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    PDF

    2SJ197

    Abstract: No abstract text available
    Text: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X


    OCR Scan
    2SJ197 2SJ197 O2SK1483 PDF

    D1026

    Abstract: 2SK2364 2SK2476 wy 509
    Text: M O S F ie ld E ffe c t T r a n s is to r 2SK2476 N ^ - Ÿ T 'J l'/W x -M O S FET m m 2SK2363/2SK2364«N5l + ^;U Ìé M / W - MOS FET7\ X -f -y ^ > ^ 1 4 ^ ' 1 * n T Ì 3 V , # -f -y 3=-> ft O y - M f iI± 3 0 V f Ä lIT '- r o O tìÀ Ciss = 590 p F t l ï


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    2SK2476 2SK2363/2SK2364 MP-45F O-220) D10268JJ1V0DS00 D1026 2SK2364 2SK2476 wy 509 PDF

    sf 128 transistor

    Abstract: 2SK2159 TRANSISTOR SF 128 6GDG TC-7989A
    Text: h ^ > v x & MOS Field Effect Transistor 2SK2159 N MOS FET m 2SK215 9 it 1.5 V i l Ü £ < y<DN3- -V % U , f£ Œ T i ® -? è , m x 'f y i - > 7 m MOS FETT' & w t f o K t-T t '/ c ® , IM & : m m m 4.5 ±0.1 < £ !> '(£ - r i * * 7 ÎC i f W f ê Œ ®


    OCR Scan
    2SK2159 2SK2159it sf 128 transistor 2SK2159 TRANSISTOR SF 128 6GDG TC-7989A PDF

    jft 1411

    Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
    Text: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o


    OCR Scan
    2SK2109 2SK2109 TC-7983A 484Sife jft 1411 c947 100 N31 transistor mur 641 M 9619 transistor 9619 nec 7824 ki 30 if 35acr PDF

    pa1476h

    Abstract: PA1476H nec PA1476 UPA1476H R2 KL
    Text: ^ / \ ° 7 - C o m p o u n d P o w e r T ran s is to r AR R A Y / j P NPNX ¥ 7 1 4 7 6 -V J IM 'S V =3> /^P A 1 476ti 4 * Ÿ r t M N P N S ÿ > v 'X £ T U -f T% 7°U > 2 • £ -f 7° 7 -i 2 • 7 A (3 M & : m m ? V 5 U • E C R U C O g l U ^ i î ^ , VTR • 7 v


    OCR Scan
    476ti pa1476h PA1476H nec PA1476 UPA1476H R2 KL PDF

    2SD1000

    Abstract: IC HE 4011 2SB799 2SD100 TEB-528 2SD1000 TC-5494A WFs transistor
    Text: ?— S • Ss— H Silicon T ra n s is to r 2SD1000 o - t — r 'A * T > m m m i •mm - 7 °m < T ) K 7 4 2 S B 7 9 9 ¿ 3 yy°') ? 'jr f È f f l e '# ti~0 O/J'A^’C P t ^ '^ ^ ^ > ¡ftiiŒ T 'i) < 5o 1.5+0.1 p m = 2 .0 m w ± 0 .7 mmX Il 3 U 7 y W 3


    OCR Scan
    2SD1000 2SB799 OT-89) PWS10 cycleS50 2SD1000 IC HE 4011 2SD100 TEB-528 2SD1000 TC-5494A WFs transistor PDF

    transistor w bh 212

    Abstract: SK FN 521 sol 4011 be 2SD1779 TN-6014 TN60 hia 51
    Text: •7 s— "S7 • S ' — h - NEC ^ Silicon T ran sisto r 2SD1779 & m M M o « h FE -0 L * ' i f& V CE, „ t) f t w ^ - f i ^ mm) t - f - ' l $1 t L T f t i S T 'i - o hKE= 8 0 0 ~ 3 2 0 0 (a t V CE = 5 .0 V, Ic = 1 .0 A ) V CE(sat) = o / J '^ T * f F


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    2SD1779 transistor w bh 212 SK FN 521 sol 4011 be 2SD1779 TN-6014 TN60 hia 51 PDF

    H71EE

    Abstract: RJ 49 2SK1586 BH RV transistor TF230
    Text: MOS M O S Field Effe ct T ra n sisto r 2SK1586 N- 9 - V * J U 2SK1586 ìi, i c < v & t ! ^ £ N FET MOS FET T', 5 V f i S I -y - f > t & MOS FET li * r m ? T t ') U — y 1/ ; , ^ - { î : mm) . <, X ^ Ì 7 f > i - ? , # MOS i, m l.5 ± 0 .l A r o 5 V « i l * IC


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    2SK1586 2SK1586 60iti iMnEt83Â H71EE RJ 49 BH RV transistor TF230 PDF

    2SD1698

    Abstract: PA33
    Text: T 2— S • 5 /— h* S ilicon T ra n sisto r 2SD1698 «f • ^ Ü « b , 800 m A Î T"iOSihFE? -i ^ 9 h V ÿ 'i "7* O I mm 5,2 MAX, ( r- > j > h >^m) A M të T "t„ O Î Ê V c E ( s a t ) 'f " i _ „ (T a - 25 °C) n s w& -t fë te # ÿL -7 9 ■ ^ - x f î l J S Œ


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    2SD1698 PWS10 CycleS50 SC-43B 10Nflrr 2SD1698 PA33 PDF

    WE74

    Abstract: 2SJ212
    Text: NEC M O S Field Effect Transistor 2SJ212 M O S FET KBm 2SJ212Ü P f- ì* -t' /l'MM MOS F E T T \ 5 V ïtï 3 U C ¿0 £H* fc i § W M m W iW ^ T tÊ * X ^ -{È • mm -f ' y f - > * M O S F E T i i : t >ffiijL*s'fg <, X ^ y f > 7 & H b ü t l Z U § £ £ > ,


    OCR Scan
    2SJ212IÃ WE74 2SJ212 PDF