102 TRANSISTOR
Abstract: SEN 102 dec M4 diode E80276 MG800J1US52A 2VGE mitsubishi igbt
Text: MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG800J1US52A FEATURE ¡The electrodes are isolated from case. ¡Enhancement-mode ¡Integrates fault-signal output circuit in package. Short-Circuit and Over-Current
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MG800J1US52A
E80276
E80271
102 TRANSISTOR
SEN 102
dec M4 diode
E80276
MG800J1US52A
2VGE
mitsubishi igbt
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tlp421 equivalent
Abstract: igbt protection circuit diagram MQ400V1US51A igbt controller IPM module MG400Q2YS60A 110C mg600Q1US59 MG300Q2YS60A MG400V2YS60A
Text: NEW COMPACT IGBT MODULES WITH INTEGRATED CURRENT AND TEMPERATURE SENSORS By Eric R. Motto, John F. Donlon Application Engineering Powerex Incorporated Abstract – A new family of compact IGBT modules has been developed to bridge the gap between fully integrated IPM devices and basic IGBT modules. The idea of this new family was
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MG800J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 8 0 0 J 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance • Enhancement-Mode • High Speed : ^ = 0 .3 0 /^ Max. (I0 = 8OOA)
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MG800J1US51
15/d5
2-109E1A
100//s!
jS125â
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Untitled
Abstract: No abstract text available
Text: MG800J1US51 HIGH POW ER SW ITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode High Speed : tf= 0.30//s Max. (l£ = 800A) trr = 0.15//s (Max.) (Ip = 800A)
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MG800J1US51
30//s
15//s
2-109E1A
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MG800J1US51
Abstract: S5 3000
Text: TOSHIBA MG800J1US51 M G 8 0 0 J 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : tf=0.30;i*s Max. (Iç; = 800A)
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MG800J1US51
MG800J1
15//s
2-109E1A
MG800J1US51
S5 3000
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MG800J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 8 0 0 J 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : ^ = 0 .3 0 /^ Max. (I0 = 8OOA)
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MG800J1US51
15/d5
2-109E1A
jS125
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VG-800A
Abstract: No abstract text available
Text: TOSHIBA MG800J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 8 0 0 J 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : tf= 0.30^s Max. (Ic = 800A)
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MG800J1US51
2-109E1A
VG-800A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA M G800J1US51 TOSHIBA GTR MODULE SILICON N CHAN N EL IGBT MG 8 0 0 J 1 US51 HIGH POWER SW ITCHING APPLICATIO NS M OTOR CO N TRO L APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance • Enhancem ent-M ode • High Speed : t f= 0 .3 0 ,« s Max. ( Iç = 800A)
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G800J1US51
MG800J1US51
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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MG40001US41
Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50
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MG400J1US51
MG800J1US51
MG300J1US51
MG40J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG400J2VS50
MG2SJ6ES40
MG40001US41
MG806ES42
MG15J6ES40
MG75J2YS50
MG100Q2YS42
mg300q1us41
MG50Q2YS40
mg150j1
MG100J2YS50
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GT80J101
Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412
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GT8J101
GT8J102
GT8Q101
GT15J101
GT15J102
GT8Q102
MG300J2YS50
MG400J1US51
MG400J2YS50
MG800J1US51
GT80J101
MG75Q2YS40
MG360V1US41
MG100Q2YS42
MG75J6ES50
GT60M301
MG15J6ES40
MG300Q2YS40
MG150Q2YS40
mg100j6es5
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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MG75J2YS40
Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-109C1A
MG50J6ES50
MG75J6ES50
2-94A2A
MG100J6ES50
MG50Q6ES11
MIG150J201H
MIG200J201H
MIG75Q201H
MIG100Q201H
MG75J2YS40
MG100J2YS45
MG50J2YS45
MG150J2YS45
MG300Q1US
MG400Q1US11
MG400J2YS40
MG150J2YS40
MG200Q2YS1
MG200J2YS45
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