MGF0909A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0909A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power
|
Original
|
MGF0909A
MGF0909A
June/2004
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0909A L & S BAND / 6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN 4.4+0/-0.3
|
Original
|
MGF0909A
MGF0909A
|
PDF
|
MGF0909A
Abstract: MGF0909a application
Text: < High-power GaAs FET small signal gain stage > MGF0909A L & S BAND / 6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3
|
Original
|
MGF0909A
MGF0909A
MGF0909a application
|
PDF
|
MGF0909
Abstract: MGF0909a J10-0025
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The MGF0909A, GaAs FET with an N-channel schottky gate, is Unit:millimeters designed for use in UHF band amplifiers. FEATURES 1 • High output power P1dB=38dBm TYP.
|
Original
|
MGF0909A
MGF0909A,
38dBm
20dBm
MGF0909
MGF0909a
J10-0025
|
PDF
|
C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
|
Original
|
M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
|
PDF
|
MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
|
Original
|
H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
|
PDF
|
MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
|
Original
|
H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING U nit:m illim eters The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power PidB=38dBm(TYP.)
|
OCR Scan
|
MGF0909A
MGF0909A,
38dBm
20dBm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING Unit:millimeiers The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. y FEATURES • High output power PidB=38dBm(TYP.)
|
OCR Scan
|
MGF0909A
MGF0909A,
38dBm
20dBm
|
PDF
|
MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
|
OCR Scan
|
MGF1102
MGF1302
MGF1303B
MGFI323
MGF1402B
MGFI412B
MGF1403B
MGF1423B
MGFI425B
MGFI902B
MGF1200
MGF4310
MGF1100
MGF1412
MGF4301
MGF1304
MGF7003
MGF4305A
|
PDF
|
