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    MGF4951A Search Results

    MGF4951A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF4951A Mitsubishi TRANS JFET 2V 60MA 3LEAD-LESS CERAMIC T/R Original PDF
    MGF4951A Mitsubishi Super Low Noise InGaAs HEMT Scan PDF

    MGF4951A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MGF4951A

    Abstract: MGF4952A
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band


    Original     		June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A MGF4951A MGF4952A PDF

    Untitled

    Abstract: No abstract text available
    Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A 12GHz PDF

    low noise hemt transistor

    Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A ORD148 50-ohm low noise hemt transistor InGaAs HEMT mitsubishi MGF4951A MGF4952A PDF

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 PDF

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K" PDF

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L PDF

    MGF4951A

    Abstract: Low Noise HEMT 12g transistor
    Text: Jan./1999 [ M ITS U B IS H I S E M IC O N D U C T O R Preliminary <G aAs FET> MGF4951A S U P E R LO W N O IS E InGaAs H E M T Leadless Ceramic Package) DESCRIPTION Outline Drawing The M G F4951A super-low-noise HEM T (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    OCR Scan     		MGF4951A MGF4951A 12GHz mgf495ia Low Noise HEMT 12g transistor PDF

    LOW HEMT

    Abstract: Hemt transistor
    Text: Jan./1999 Preliminary MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4951A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    OCR Scan     		MGF4951A MGF4951A 12GHz 12GHz lD-10mA LOW HEMT Hemt transistor PDF

    FET 748

    Abstract: MGF4951A MGF4951 MGF4952A 4952A ta 1223
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Outline Drawing DESCRIPTION The MGF495*A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    OCR Scan     		MGF4951A/4952A MGF495 12GHz MGF4951A MGF4952A 12GHz MGF4951A FET 748 MGF4951 MGF4952A 4952A ta 1223 PDF