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    MGF4957A Search Results

    MGF4957A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF4957A Mitsubishi super-low noise HEMT (High Electron Mobility Transistor) Original PDF

    MGF4957A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    InGaAs HEMT mitsubishi

    Abstract: transistor P7d MGF4957A Fet P7d
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4957A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4957A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		June/2004 MGF4957A MGF4957A 12GHz 3000ps, InGaAs HEMT mitsubishi transistor P7d Fet P7d PDF