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Abracon Corporation AMPMGFC-4.9152 MEMS Crystal Oscillator 4.9152MHz ?25ppm 4-Pin SMD Bulk - Bulk (Alt: AMPMGFC-4.9152)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGFC-4.9152	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMGFC-4.9152					1 - 10 - 100 - 1000 $1.49 10000 $1.34	Get Quote
Avnet Abacus	AMPMGFC-4.9152			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation AMPMGFC-42.5000 MEMS Crystal Oscillator 42.5MHz ?25ppm 4-Pin SMD Bulk - Bulk (Alt: AMPMGFC-42.5000)
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Avnet Americas	AMPMGFC-42.5000	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMGFC-42.5000					1 - 10 - 100 - 1000 $1.49 10000 $1.34	Get Quote
Avnet Abacus	AMPMGFC-42.5000			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation AMPMGFC-4.9152T MEMS Crystal Oscillator 4.9152MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-4.9152T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGFC-4.9152T	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMGFC-4.9152T					1 - 10 - 100 - 1000 $1.41 10000 $1.34	Get Quote
Avnet Abacus	AMPMGFC-4.9152T			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation AMPMGFC-49.1520T3 MEMS Crystal Oscillator 49.152MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-49.1520T3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGFC-49.1520T3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	AMPMGFC-49.1520T3			113 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation AMPMGFC-49.1520 MEMS Crystal Oscillator 49.152MHz ?25ppm 4-Pin SMD Bulk - Bulk (Alt: AMPMGFC-49.1520)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGFC-49.1520	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	AMPMGFC-49.1520			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MGFC4 Datasheets (81)

Part	Manufacturer	Description	Datasheet Type	PDF
MGFC40V3642	Mitsubishi	3.6~4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF
MGFC40V3742	Mitsubishi	3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Original	PDF
MGFC40V3742	Mitsubishi		Original	PDF
MGFC40V3742A	Mitsubishi	3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF
MGFC40V4450	Mitsubishi	4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET	Original	PDF
MGFC40V4450	Mitsubishi		Original	PDF
MGFC40V4450A	Mitsubishi	4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF
MGFC40V5258	Mitsubishi	5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET	Original	PDF
MGFC40V5258	Mitsubishi	5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF
MGFC40V5964	Mitsubishi	5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET	Original	PDF
MGFC40V5964	Mitsubishi		Original	PDF
MGFC40V5964A	Mitsubishi	5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF
MGFC40V6472	Mitsubishi	6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Original	PDF
MGFC40V6472	Mitsubishi	6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF

MGFC40V6472A	Mitsubishi	6.4-7.2 GHz BAND 10W Internally Matched GaAs FET	Scan	PDF
MGFC40V7177	Mitsubishi	7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF
MGFC40V7177A	Mitsubishi	7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF
MGFC40V7177B	Mitsubishi	7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF
MGFC40V7785	Mitsubishi	7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF
MGFC40V7785A	Mitsubishi	7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF

MGFC4 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K 1358 fet transistor Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.	Original	MGFC4419G MGFC4419G 12GHz K 1358 fet transistor FET K 1358 C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581	PDF
MGFC42V5964A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC42V5964A MGFC42V5964A Item-51]	PDF
MGFC42V5258 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	MGFC42V5258 MGFC42V5258 June/2004	PDF
GAAS FET AMPLIFIER f 10Mhz to 2 GHz Abstract: MGFC41V3642 36f36 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+ /-0.3 R1.25 (1) 0.6+ /-0.15 2M IN The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2	Original	MGFC41V3642 MGFC41V3642 50ohm Item-51] 30dBm Item-51 10MHz GAAS FET AMPLIFIER f 10Mhz to 2 GHz 36f36	PDF
MGFC42V5867 Abstract: No abstract text available Text: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8 ~ 6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004	Original	June/2004 MGFC42V5867 75GHz MGFC42V5867	PDF
MGFC44V4450 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V4450 4.4 ~ 5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC	Original	MGFC44V4450 MGFC44V4450	PDF
MGFC44V5964 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V5964 5.9 ~ 6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC	Original	MGFC44V5964 MGFC44V5964	PDF
MGFC42V7785A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC42V7785A MGFC42V7785A 32dBm 10MHz June/2004	PDF
MGFC40V3742 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004	PDF
MGFC41V5964 Abstract: fet 30 f 124 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4	Original	MGFC41V5964 MGFC41V5964 50ohm Item-51] 30dBm fet 30 f 124	PDF
MGFC41V6472 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V6472 6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC41V6472 MGFC41V6472 30dBm 10MHz Oct-03	PDF
MGFC40V3742 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	MGFC40V3742 MGFC40V3742 29dBm 10MHz	PDF
MGFC45V5964A Abstract: IM324 Text: 27-March'98 MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY MGFC45V5964A Notice : This is not a final specification. Some parametric limits are subject to change. 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched	Original	27-March MGFC45V5964A MGFC45V5964A IM324	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC45V5964A 5.9 – 6.4 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC45V5964A MGFC45V5964A -45dBc	PDF

Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC45V4450A 4.4 – 5.0 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC45V4450A MGFC45V4450A -45dBc	PDF
MGFC47B3538B Abstract: MGFC47B Text: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package	Original	MGFC47B3538B MGFC47B3538B 37dBm GF-60 MGFC47B	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC41V3642 3.6 – 4.2 GHz BAND / 14W OUTLINE DRAWING DESCRIPTION The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC41V3642 MGFC41V3642 -45dBc 30dBm	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC41V7177 7.1 – 7.7 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC41V7177 MGFC41V7177 -45dBc 30dBm	PDF
MGFC40V6472 Abstract: pir 428 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6 . 4 — 7.2G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAW ING The M G F C 4 0 V 6 4 7 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2	OCR Scan	MGFC40V6472 MGFC40V6472 ltem-01: ltem-511 pir 428	PDF
MGFC47V5864 Abstract: 5.8 ghz transmitter Text: M ITSU B ISH I S E M IC O N D U C T O R <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz	OCR Scan	MGFC47V5864 MGFC47V5864 47dBm 25deg 10MHz 5.8 ghz transmitter	PDF
MGFC42V5867 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8~6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package	OCR Scan	MGFC42V5867 75GHz MGFC42V5867 GF-18 25deg	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 — 8 .5G H z BAND 16W INTERNALLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 — 8 .5 GHz band amplifiers. The herm etically sealed metal-ceramic	OCR Scan	MGFC42V778S	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42V 6472 6.4~ 7.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472 is an internally impedance-matched GaAs power FE T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	MGFC42V6472 27C102P, RV-15 16-BIT)	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC44V3436 is an internally im pedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The herm etically sealed m etal-ceramic	OCR Scan	MGFC44V3436 FC44V3436 -45dBc 120mA	PDF

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MGFC4 Price and Stock

Abracon Corporation AMPMGFC-4.9152

Abracon Corporation AMPMGFC-42.5000

Abracon Corporation AMPMGFC-4.9152T

Abracon Corporation AMPMGFC-49.1520T3

Abracon Corporation AMPMGFC-49.1520

MGFC4 Datasheets (81)

MGFC4 Datasheets Context Search

K 1358 fet transistor

MGFC42V5964A

MGFC42V5258

GAAS FET AMPLIFIER f 10Mhz to 2 GHz

MGFC42V5867

MGFC44V4450

MGFC44V5964

MGFC42V7785A

MGFC40V3742

MGFC41V5964

MGFC41V6472

MGFC40V3742

MGFC45V5964A

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MGFC47B3538B

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MGFC40V6472

MGFC47V5864

MGFC42V5867

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