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    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40VS2S8 5 .2 ~ 5 .8 G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 5 2 5 8 is an internally impedance-matched GaAs power FET especially designed for use in 5 . 2 - 5 . 8 GHz band amplifiers. The hermetically sealed metal-ceramic


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