lp831
Abstract: No abstract text available
Text: 5 4 7 6 1 8 3 2 5 4 7 6 32,22 ±0,20 1,269 ±0,008 14,89 0,586 3 2 21,59 0,850 MAX 1 0,38 ±0,10 0,015 ±0,004 RECOMMENDED PANEL CUTOUT EMPFOHLENER FRONTPLATTEN AUSSCHNITT TOP OF PCB LP 8 31,12 1,225 8 LED 2 1 LED 1 8 13,80 0,54 1 3,05 ±0,50 0,12 ±0,020
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Hz-80
Hz-100MHz
8C10T
lp831
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RTL8139 reference design
Abstract: LXT971 RTL8139 reference
Text: 10/100BaseT 10BaseT
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10/100BaseT
10BaseT
10/100BaseT.
65MHz
1MHz30MHz
30MHz-60MHz
60MHz80MHz
-65MHz
30MHz
-100MHz
RTL8139 reference design
LXT971
RTL8139 reference
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Untitled
Abstract: No abstract text available
Text: 10/100 BaseT Integrated RJ45 Features 2dual modular technology Meets IEEE 802.3 Unmatched reliability Hand soldering and loose coils eliminated Industry standard connector footprint Optimum performance Cost effective mod2tmtechnology 0510
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100kHz
100MHz
1MHz30MHz
MHz45
MHz60
MHz80
1Mhz-100MHz
MHz100MHz
JFM25110-0510
DP83843
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mic24011-0101
Abstract: MIC24311 mic25010-5110 MIC24010-0101 MIC24311-0101 79C874 L80227 MIC25011-0110 mic25010 61ye
Text: TransformingMagneticsTM MIC24xxx-xxxx 10/100 BaseT Integrated RJ45 LANDatacom Features AutoMDIX compatible Optional PoE VOIP compatible designs Optional RoHS compliant products Optional extended/industrial temp (-40 to +85C) Optional pin-outs
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MIC24xxx-xxxx
100KHz
100MHz
1MHz30MHz
30MHz-45MHz
45MHz60MHz
60MHz80MHz
1Mhz-100T:
MIC24311-0101
MIC25311-0110
mic24011-0101
MIC24311
mic25010-5110
MIC24010-0101
79C874
L80227
MIC25011-0110
mic25010
61ye
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XFMR
Abstract: LU3S092
Text: 10/100 BASE-TX “LAN-MATE” P/N: LU3S092 DATA SHEET A. CHARACTERISTICS DESCRIPTION: 1. RJ-45 CONNECTOR INTEGRATED WITH X’FMER /IMPENDANCE RESISTOR/HIGH VOLTAGE CAPACITOR. 2. SIZE SAME AS RJ-45 CONNECTOR TO SAVE PCB BOARD SPACE. 3. REDUCE EMI RADIATION, IMPROVE EMI PERFORMANCE.
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LU3S092
RJ-45
500Vdc
KHz/100mV8mA/dc
Hz-100MHz
100MHz
XFMR
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40ST1022
Abstract: 350AT
Text: 40 PIN SMD ETHERNET 10/100 BASE TX TWO PORT TRANSFORMER P/N:40ST1022 DATA SHEET A.GENERAL SPECIFICATIONS: 1.40-PIN SMD PACDAGE & DESIGNED TO MEET 802.3 & IR REQUIREMENT. 2.OPERATING TEMP RANGE: 0°C TO+70°C 3.STORAGE TEMP RANGE: -25°C TO+125°C. B.ELECTRICAL SPECIFICAIONS AT 25°C:
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40ST1022
40-PIN
350AT
-38AT0
Hz-100MHz.
5-30MHz
40MHz
50MHz
60-80MHz
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Untitled
Abstract: No abstract text available
Text: Bothhand 16ST6148 100Base-T Ethernet Isolation Transformer General Information 1. 2. 3. 4. 5. 6. 16 Pin, SMD Package with common choke to meet 100 MB/S specification Low leakage inductance and winding capacitances for fast rise time More economical than discrete transformers
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16ST6148
100Base-T
414CT
O10-12-11)
100KHz/0
Hz-100MHz)
-16dB
500KHz
30MHz
-14dB
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TD BEL FUSE INC. AND SHALL NDT BE COPIED, RE PR OD UC ED DR DISCLOSED WI TH OU T THE W R IT TE N A P P R O V A L DF BEL FUSE INC. LEDI PIN 13 PELAR ITY PIN14 CDLDR + YELLDW ELEC TR IC AL C H A RACTERISTICS
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PIN14
f/80M
30MHz
30MHz
80MHz
80MHz
100MHz
100kHz
100MHz
L8261A1T23-F
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yx 801
Abstract: yx 801 led led yx 801 RD2A yx+801+led O11O
Text: S c h e m a tic : .J Isolation Voltage: 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 350uH Min @1OOKHz 100mV 8mADC Rise Time (1 0 — 90%): 2.5ns Typical Insertion Loss (1 OOKHz— 999KHz): -1 .0 d B Maximum (1 .OMHz— 15.0MHz): -0 .3 d B Maximum (15.1 MHz— 60.0MHz): -0 .6 d B Maximum
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350uH
100KHz
100mV
100KHz-999KHz)
100MHz)
100KHz-60
-18dB
80MHz)
-15dB
yx 801
yx 801 led
led yx 801
RD2A
yx+801+led
O11O
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2201
Abstract: p850
Text: Sch em atic: E lectrical S p ecificatio n s: 25°C Isolation Voltage: 2250 Vrms INPUT to OUTPUT UTP SIDE OCL: 350uH Min @100KHz 100mV 8mADC Rise Time (10— 90%): 2.5ns Typical Insertion Loss (1 OOKHz— 999KHz): — 1.0dB Maximum (1.0MHz-15.0MHz): -0.3dB Maximum
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350uH
100KHz
100mV
100KHz-999KHz)
0MHz-15
100MHz)
100KHz-60
-18dB
80MHz)
-15dB
2201
p850
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3006
Abstract: No abstract text available
Text: 1. S c h e m a t i c : Single P o rt 1 .J ISOLATION 15Q0 Vrma TURNS RATIO: (PRI/SEC) 1CT;1CT ±3% OCU 35QuH MIN <Sl1MKHz 100mV SmADC R is e T im e : 1 .7 5 n a M ax. INSERTION LOSS: -1.<JdB MAX 01 MHz-100MHz C o m p le te - 1 ,5dB MAX <9100-lZ5Mhz RETURN LOSS: -18dB Min 1-30MHz
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35QuH
100mV
Hz-100MHz
100-lZ5Mhz
-18dB
1-30MHz
840MHz
50MHz
-10dB
00MHz
3006
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Untitled
Abstract: No abstract text available
Text: 1. Mechanical Dimensions: 3. Electrical Specifications: 25DC ISOLATION: 1500Vrms TURNS RATIO: PRI/SEC 1CT:1CT ±2% SEC OCL: 350uH Min @100KHz 100mV, 8mAdc 0.730 Max OtZ'C Pri Q: 25 Min @100KHz 10QmV 0-045 0.0Z5 r t —I h- m X O 2 ûo XFMRS w w w • m
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1500Vrrns
MIL-STD-202G,
UL34-V-0
1000BASE-T
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Untitled
Abstract: No abstract text available
Text: S c h e m a tic : 1CT: 1 RJ45 RX+ RD4 1 O 8 7 RX- RD- 2 O - r RCT 3 0 - 5 1 CT: 1 TD- 6 O 6 TX- • 4 3 1 1 TD+ 5 O — - 2 TX+ CT TCT 4 0 9 1 Shld !- I Left LED o- I 0 o- l > R1 S R2 R3 < R4- T 0.001 Right LED 1 2 o- XFATM2SD—C Lxu l -4 M S
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30-TD-
350uH
100rnV
100KHz-999KHz)
100MHz)
100KHz-6O
80MHz)
-15dB
-12d0
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208H
Abstract: XFGIB100
Text: S c h e m a t i c : SINGLE PORT .J E le c tr ic a l S p e c if ic a t io n s : @ 25DC ISOLATION: 1500 Vrms TURNS RATIO: (PRI/SEC) 1CT: 1CT ±2% OCL: 350uH MIN 6>100KHz lOOmV BmADC Rise Time: 1.75ns Max. INSERTION LOSS: -O.BdB MAX 1 MHz-100MHz -1.2dB MAX 9100MHz— 125MHz
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1000pF
100KHz
Hz-100MHz
9100MHz-1Z5MHz
01MHz-
940MHz-100MHz
100KHz-100MHz
-33dB
S30MHz
Feb-21
208H
XFGIB100
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XFGIB100
Abstract: No abstract text available
Text: 3. E le c tr ic a l 1. M ech an ical D im ensions: 0 .7 2 0 ± 0.010 S p e cifica tio n s: 25°C ISOLATION: 1500 Vrms c Û.240 TURNS RATIO: PRI/5EC Rise Time: -4, 0-045 0 .0 2 5 0 .0 2 5 1.75ns Max. INSERTION LOSS: -1.0dB MAX @1 MHz-100MHz '0,004 Mlrr^"
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XFGIB100
350uH
100KHz
100mV
155-C.
E151556
0aD04"
102mm)
100DBA5E-T
XFGIB100
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208H
Abstract: No abstract text available
Text: Sch em atic: RJ45 \+J R1 8 jjrrv 7 6 w R2 -t MH- 5 r ~ l 4 R3 -Mr • k^r 3 jjn n r R4 -Wfr- 2 1 w .T T T Shld 1OOOpF 2KV 10Ó /77 R1,R2,R3,R4: 75 ±5% OHMS E lectrical S p ecificatio n s: 25°C Isolation Voltage: 1500 Vrms INPUT to OUTPUT (R J Pins to Shield)
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350uH
100KHz
5MHz-100MHz)
5MHz-40MHz)
00MHz)
2-20LQG
Hz-100MHz)
208H
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208H
Abstract: SMD 0410
Text: 1. Dimensions: 2. S ch em atic: 2CT:1CT -o 16 0.51 Max — C 0.245 Max — J 0.030 — I 0.016 ÌU 1^ o 2 O- 3 O- -o 14 -o 15 CHIP SIDE UTP SIDE -o 11 Si -o 9 , E 0.350 ^ nr nnnnnn “1 10 -0.050±0.006 XFMRSYYWW • XF6694TX4B T B u r m - I U 0.018 G ±0.002
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o-350-^
XF6694TX4B
T0TBT01T
MIL-STD-202G,
UL94V-0
E151556
350uH
100KHz
M-100MHz)
5-100MHz)
208H
SMD 0410
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2803
Abstract: No abstract text available
Text: Sch em atic: E lectrical S p ecificatio n s: 25°C Isolation Voltage: 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 350uH Min @100KHz 100mV 8mADC Rise Time (10—90%): 2.5ns Typical Insertion Loss (1 OOKHz—999KHz): —1.0dB Maximum (1.0MHz-15.0MHz): -0.3dB Maximum
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350uH
100KHz
100mV
100KHz-999KHz)
0MHz-15
100MHz)
100KHz-60
-18dBâ
80MHz)
-15dBâ
2803
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1B01
Abstract: No abstract text available
Text: S ch e m atic: .J E lectrical S p e c i f i c a t i o n s : @25°C Isolation Voltage: 2250 Vrms INPUT to OUTPUT UTP SIDE OCL: 350uH Min @100KHz lOOmV SmADC Rise Time (1 0 -9 0 % ): 2.5ns Typical Insertion Loss (1 DOKHz—999KHz): —1.0dB Maximum (1 .0M Hz-15.0M Hz): -0 .3 d B Maximum
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350uH
100KHz
00KHz-999KHz)
0MHz-15
Hz-60
10DMHz)
-18dB
80MHz)
-15dB
Hz-100MHz)
1B01
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Untitled
Abstract: No abstract text available
Text: Sch em atic: E lectrical S p ecificatio n s: 25°C Isolation Voltage: Isolation Voltage: 1500 Vrms INPUT to OUTPUT 500 Vrms ( 8 + 6 + 7 - 2 + 1 + 3 ) TURNS RATIO: TX 1CT:1 ±5% RX 1CT:1CT ±5% OCL: 350uH Minimum @100KHz 100mV 8mADC Insertion Loss (1 MHz-100MHz): -1 .0 d B Max
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Cl-10
1000pF
350uH
100KHz
100mV
1MHz-100MHz)
30MHz
-16dB
60MHz
80MHz
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p 601
Abstract: No abstract text available
Text: S c h e m a tic : UTP SIDE OCL: 350uH Min @100KHz 100mV 8mADC Rise Time 1 0 — 90% : 2.5ns Typical Insertion Loss (1 OOKHz— 999KHz): — 1.0dB Maximum (1 .0 M H z-15.0MHz): -0 .3 d B Maximum (15.1MHz— 60.0MHz): -0 .6 d B Maximum (60.1 MHz-100MHz): — 1.1 dB Maximum
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350uH
100KHz
100mV
100KHz-999KHz)
0MHz-15
100MHz)
100KHz-60
-18dB
80MHz)
-15dB
p 601
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Untitled
Abstract: No abstract text available
Text: S c h e m a tic : r ' •“ i E le c tr ic a l S p e c ific a tio n s: @25°C Is o la t io n V o lt a g e : 1500 Is o la t io n V o lt a g e : 500 TURN S R A T IO : T X O CL: 350uH R e tu rn 1 C T:1 M in im u m Insertion Loss 1 Loss: V rm s V rm s ( IN P U T
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350uH
100KHz
100rnV
Hz-100MHz)
-16dB
60MHz
80MHz
Hz-100MHz
-35dB
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XFGIB100
Abstract: C0MB01-4S
Text: Schem atic: SINGLE PORT 1 .J ISOLATION: 1500 Vrms TURNS RATIO: (PRI/SEC) 1CT:1CT ±2% OCL: 350uH MIN 100KHz 100mV 8mADC Rise Time: 1.75ns Max. INSERTION LOSS: -1 .0 d B MAX ©1 MHz-100MHz — 1.5dB MAX 0 1 0 0 — 125MHz RETURN LOSS: -1 8 d B Min © 1-30M H z
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350uH
100mV
1MHz-100MHz
100-125MHz
-18dB
1-30MHz
-15dB
40MHz
50MHz
60-80MHz
XFGIB100
C0MB01-4S
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208H
Abstract: No abstract text available
Text: 1. M echanical D im ensions: 3. E lectrical Sp ecificatio n s: 25°C A 0 .528 _ Max ISOLATION: 1500 Vrms O <m 1 S g § - O TURNS RATIO: PRI/SEC 1CT:1CT ±2% OCL: 350uH MIN @100KHz 100mV 8mADC o Rise Time: 1.75ns Max. INSERTION LOSS: -1 .0 d B MAX 1 MHz-100MHz
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XFGIB100MB
350uH
100KHz
100mV
1MHz-100MHz
100-125MHz
E151556
102mm)
1000BASE-T
XFGIB100MB
208H
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