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    MIB31T Search Results

    MIB31T Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MIB31T Micro Electronics INFRARED EMITTING DIODE Scan PDF
    MIB31TA Micro Electronics 5V infrared emitting diode Scan PDF
    MIB31TA Micro Electronics INFRARED EMITTING DIODE Scan PDF
    MIB31TA-2 Micro Electronics INFRARED EMITTING DIODE Scan PDF

    MIB31T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MI31T

    Abstract: MI31TA MIB31TA
    Text: MI31TA CRO DESCRIPTION MI31T & MIB31TA are GaAlAs infrared emitting diode molded in 3.2mm diameter clear transparent lens. r 5.3 0 .21 INFRARED EMITTING DIODE 03.15 (0.124) -N\ % 1.0(0 ,04)-f 0.75(0.03) max. • • • All dimension .in mm(inch) No Scale


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    PDF MI31TA MI31T MIB31TA 150mW MI31T MI31TA

    MIB31TA-2

    Abstract: No abstract text available
    Text: CRO MIB31TA-2 INFRARED EMITTING DIODE DESCRIPTION MIB31TA-2 is GaAiAs infrared emitting diode molded in T-l standard 3mm diameter clear transparent lens. • All Dimension io mm inch • NO Scale • Toi : + / - 0.3mm ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    PDF MIB31TA-2 MIB31TA-2 100mA 200mW

    MIB31T

    Abstract: No abstract text available
    Text: MIB31T INFRARED EMITTING DIODE DESCRIPTION M1B31T is GaAlAs infrared emitting diode molded in T-l standard 3 mm diameter clear transparent lens. • All Dimension in mm inch NOScale Toi : + / - n i mm ABSOLUTE MAXIMUM RATINGS ( Ira=25°C) 100mA Forward Current (Continuous)


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    PDF MIB31T 100mA 200mW 10\isy -20mA

    MIB31T

    Abstract: No abstract text available
    Text: CRO MIB31T INFRARED EMITTING DIODE DESCRIPTION M1B31T is GaAlAs infrared emitting diode molded in T-l standard 3mm diameter clear transparent lens. • NO Scale • Toi : + / - 0.3mm ABSOLUTE MAXIMUM RATINGS Ta=25°C Forward Current (Continuous) Pulse Forward Current


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    PDF MIB31T MIB31T 100mA 200mW

    770nm

    Abstract: No abstract text available
    Text: UKU INFRARED EMITTING DIODE DESCRIPTION MIB31TA-2 is GaAiAs infrared emitting diode molded in T-l standard 3mm diameter clear transparent lens. • NO Scale • Toi : + / - 0.3mm ABSOLUTE MAXIMUM RATINGS Ta=25°C 100mA Forward Current (Continuous) Pulse Forward Current


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    PDF M1B31TA-2 100mA 200mW Ocf-98 770nm

    MI31T

    Abstract: MI31TA MIB31TA Diode BAY 45
    Text: MI31T MI31TA CRO INFRARED EMITTING DIODE DESCRIPTION ML31T & MIB31TA are GaAlAs infrared emitting diode molded in 3.2mm diameter clear transparent lens. 03.15 0.124 r 5.3 ( . ) 0 21 1.0(0 % ,04)-f -N\ 0.75(0.03) max. • • • A ll dim ension .in mm(inch)


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    PDF MI31T MI31TA ML31T MIB31TA 150mW Diode BAY 45

    G321

    Abstract: MIB31TA-2 004H
    Text: MIB31TA-2 INFRARED EMITTING DIODE 03.15 " 0.124 DESCRIPTION f MIB31TA-2 is GaAlAs infrared emitting diode molded in T-l standard 3mm diameter clear transparent lens. 5.3 (0 .21) 1.0(0.04)-'' 0.75(0.03) max. mm. 0.5 -Cathode (0.02) ' 1.5(0.06) -2.54(0.1) • All Dimension in mm (inch)


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    PDF MIB31TA-2 100mA 200mW 4351G Oet-90 G321 004H

    MEL78

    Abstract: MIB31T
    Text: IVI I KU NPN SILICON PHOTO TRANSISTOR DESCRIPTION M EL78 is NPN silicon planar photo­ transistor. It features illumination sensitivity, ultra fast high 03.15 0.124 response time. All dimension in mm(inch) No Scale Toi. : +/-0.3mm 5.3 M EL78 is spectrally and mechanically


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    PDF MEL78 MIB31T. 100pA 100/iA MIB31T

    MEL78

    Abstract: MI31T MIB31T
    Text: MEL78 NPN SILICON PHOTO TRANSISTOR D E S C R IPT IO N MEL78 is NPN silicon planar phototransistor. It features illumination sensitivity, ultra high 03.15 0.124 fast response time. MEL78 is spectrally and mechanically 5.3 All dimension in mm(tnch) No Scale


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    PDF MEL78 MI31T MIB31T. MIB31T