XH018
Abstract: No abstract text available
Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron
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XH018
XH018
18-micron
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CMOS
Abstract: No abstract text available
Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications
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NMOS depletion pspice model
Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications
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XH035
Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target
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XH035
XH035
35-micron
mos rm3 data
nmos transistor 0.35 um
MOS RM3
"X-Fab" Core cell library
bsim3v3
jfet wn 428
PHVC
polysilicon resistor
bsim3
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CMOS spice model
Abstract: MOS RM3 Spice model inductor BSIM3v3.2 XH035 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library
Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target
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XH035
XH035
35-micron
CMOS spice model
MOS RM3
Spice model inductor
BSIM3v3.2
XH035 library
w10 jfet
mos rm3 data
PMOS
"X-Fab" Core cell library
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Untitled
Abstract: No abstract text available
Text: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with
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CMOS
Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.
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XH035
Abstract: No abstract text available
Text: 0.35 m Process Family: XH035 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions DESCRIPTION The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and
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XH035
XH035
35-micron
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XH018
Abstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model
Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six
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XH018
XH018
18-micron
sonos
MOS RM3
model values for 0.18 micron technology cmos
0.18 um CMOS parameters
analog devices transistor tutorials
CMOS spice model
bsim3 0.18 micron parameters
EPI EEPROM
bsim3 circuit model
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bsim3 0.18 micron parameters
Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width
Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six
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XH018
XH018
18-micron
bsim3 0.18 micron parameters
bsim3 model for 0.18 micron technology for hspice
0.18 um CMOS parameters
bsim3 model
model values for 0.18 micron technology cmos
CMOS Process Family
model values for 0.25 micron technology cmos
aadcc01_3v3
0.18-um CMOS technology length and width
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spice model Tunnel diode
Abstract: dpsN TUNNEL DIODE spice model
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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0.6 um cmos process
Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL SOLUTIONS A. System Overview Transfer Hoses B1. Cable Ties Part Number PHM1 PHM2 PHM3 PHM4 PHS2 PHS3 B2. Cable Accessories B3. Stainless Steel Ties C1. Wiring Duct PHM3 C4. Cable Management PAT1M, PAT1.5M Length Ft. m 3.2 1 Part Description Transfers cable tie and signal from
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PDH10-37
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SW-SPST footprint
Abstract: 470nF CQ31 SA1203I TQFP48 TSA1203 TSA1203IF TSA1203IFT SW-SPsT sfdr-i
Text: TSA1203 DUAL-CHANNEL, 12-BIT, 40MSPS, 230mW A/D CONVERTER • Low power consumption: 230mW@40Msps ■ Single supply voltage: 2.5V D1 D0 LSB VCCBE GNDBE 44 43 42 VCCBI VCCBI OEB 48 47 46 45 AVCC AVCC INCMI index corner REFMI REFPI ■ ■ ■ ■ ■ ■ Independent supply for CMOS output stage
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TSA1203
12-BIT,
40MSPS,
230mW
40Msps
10MHz
SW-SPST footprint
470nF
CQ31
SA1203I
TQFP48
TSA1203
TSA1203IF
TSA1203IFT
SW-SPsT
sfdr-i
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SW-SPST footprint
Abstract: idc32 CQ32 CQ612 RESISTOR FOOTPRINT 805 IDC 32 SW-SPsT C16 marking code SOT23-6
Text: TSA1203 DUAL-CHANNEL, 12-BIT, 40MSPS, 230mW A/D CONVERTER • Low power consumption: 230mW@40Msps ■ Single supply voltage: 2.5V D1 D0 LSB VCCBE GNDBE 44 43 42 VCCBI VCCBI OEB 48 47 46 45 AVCC AVCC INCMI in dex corner REFMI REFPI ■ ■ ■ ■ ■ ■
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TSA1203
12-BIT,
40MSPS,
230mW
40Msps
10MHz
20atent
SW-SPST footprint
idc32
CQ32
CQ612
RESISTOR FOOTPRINT 805
IDC 32
SW-SPsT
C16 marking code SOT23-6
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CQ31
Abstract: TSA1005 TSA1005-20IF TSA1005-20IFT TSA1005-40IFT TSA1005I-40IF TQFP48 Fn001 31C SOT23-6
Text: IG N TSA1005 DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER S NOT FOR NEW DESIGN P 10-bit, dual-channel A/D converter in deep E D 33 D3 W 32 D4 IPOL 6 31 D5 E 29 D7 N 28 D8 AGND 10 27 D9 MSB INBQ 11 26 VCCBE 25 GNDBE AGND 12 13 14 15 16 23 24 GNDBI DVCC DGND
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TSA1005
10-BIT,
20/40MSPS
CQ31
TSA1005
TSA1005-20IF
TSA1005-20IFT
TSA1005-40IFT
TSA1005I-40IF
TQFP48
Fn001
31C SOT23-6
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CQ11
Abstract: CQ31 SOT23-6 TQFP48 TSA1005 TSA1005-20IF TSA1005-20IFT TSA1005-40IFT TSA1005I-40IF
Text: TSA1005 DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER • 10-bit, dual-channel A/D converter in deep NC NC VCCBE GNDBE VCCBI VCCBI OEB 36 D0 LSB 35 D1 AGND 3 34 D2 INIB 4 33 D3 AGND 5 32 D4 IPOL 6 31 D5 TSA1005 AVCCB 7 30 D6 29 D7 AGND 8 28 D8 AGND 10 27 D9(MSB)
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TSA1005
10-BIT,
20/40MSPS
CQ11
CQ31
SOT23-6
TQFP48
TSA1005
TSA1005-20IF
TSA1005-20IFT
TSA1005-40IFT
TSA1005I-40IF
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CQ31
Abstract: marking code c41 SMD ic SW-SPST footprint SA1203I TQFP48 TSA1201 TSA1203 TSA1203IF TSA1203IFT cq13
Text: TSA1203 DUAL-CHANNEL, 12-BIT, 40MSPS, 230mW A/D CONVERTER PIN CONNECTIONS top view AVCC OEB CKD VCCBI GNDBE VCCBE D0(LSB) 41 40 39 38 37 D1 AVCC 42 36 D2 35 D3 3 34 D4 INBI 4 33 D5 A GND 5 32 D6 IPOL 6 31 D7 AVCC 7 30 D8 29 D9 INQ 9 28 D10 A GND 10 27 D11(MS B )
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TSA1203
12-BIT,
40MSPS,
230mW
230mW
10MHz
CQ31
marking code c41 SMD ic
SW-SPST footprint
SA1203I
TQFP48
TSA1201
TSA1203
TSA1203IF
TSA1203IFT
cq13
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rs7 smd
Abstract: No abstract text available
Text: TSA1005 DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER • 10-bit, dual-channel A/D converter in deep NC NC VCCBE 44 43 42 GNDBE VCCBI VCCBI OEB 48 47 46 45 AVCC AVCC INCMI ■ ■ ■ ■ index corner REFMI ■ ■ REFPI ■ PIN CONNECTIONS top view submicron CMOS technology
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TSA1005
10-BIT,
20/40MSPS
40Msps,
10MHz
10MHz.
rs7 smd
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CQ31
Abstract: TQFP48 TSA1005 TSA1005-20IF TSA1005-20IFT TSA1005-40IFT TSA1005I-40IF ultrasound transducer transformer
Text: TSA1005 DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER • 10-bit, dual-channel A/D converter in deep NC NC VCCBE GNDBE VCCBI VCCBI OEB 36 D0 LSB 35 D1 AGND 3 34 D2 INIB 4 33 D3 AGND 5 32 D4 IPOL 6 31 D5 TSA1005 AVCCB 7 30 D6 29 D7 AGND 8 28 D8 AGND 10 27 D9(MSB)
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TSA1005
10-BIT,
20/40MSPS
CQ31
TQFP48
TSA1005
TSA1005-20IF
TSA1005-20IFT
TSA1005-40IFT
TSA1005I-40IF
ultrasound transducer transformer
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E11213
Abstract: sa1005
Text: TSA1005-20 DUAL-CHANNEL, 10-BIT, 20MSPS, 100mW A/D CONVERTER Preliminary Data • 10-bit, dual-channel A/D converter in deep NC 41 40 39 NC 44 43 42 VCCBE GNDBE VCCBI VCCBI OEB AVCC 47 46 45 AVCC 48 INCMI ■ ■ ■ ■ REFMI ■ ■ index c orner REFPI ■
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TSA1005-20
10-BIT,
20MSPS,
100mW
10MHz
10MHz.
20Msps
E11213
sa1005
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CQ31
Abstract: Polar 585 schematic 470nF STG719 TQFP48 TSA1005 TSA1005-40IF TSA1005-40IFT idc32 IDC 32
Text: TSA1005-40 DUAL-CHANNEL, 10-BIT, 40MSPS, 150mW A/D CONVERTER Preliminary Data • 10-bit, dual-channel A/D converter in deep PIN CONNECTIONS top view submicron CMOS technology NC NC VCCBE GNDBE VCCBI VCCBI OEB 48 47 46 45 AVCC AVCC INCMI ■ ■ ■ ■
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TSA1005-40
10-BIT,
40MSPS,
150mW
10MHz
10MHz.
40Msps
CQ31
Polar 585 schematic
470nF
STG719
TQFP48
TSA1005
TSA1005-40IF
TSA1005-40IFT
idc32
IDC 32
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SW-SPST 3
Abstract: om SMD CODE MARKING sa1005 c.d.m. technology c53 HP8644 Polar 585 schematic MICRON phm
Text: TSA1005-40 DUAL-CHANNEL, 10-BIT, 40MSPS, 150mW A/D CONVERTER Preliminary Data • 10-bit, dual-channel A/D converter in deep NC NC VCCBE 44 43 42 GNDBE VCCBI VCCBI OEB 48 47 46 45 AVCC AVCC INCMI ■ ■ ■ ■ index corner REFMI ■ ■ REFPI ■ PIN CONNECTIONS top view
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TSA1005-40
10-BIT,
40MSPS,
150mW
10MHz
10MHz.
40Msps
SW-SPST 3
om SMD CODE MARKING
sa1005
c.d.m. technology c53
HP8644
Polar 585 schematic
MICRON phm
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2 pin connector sip2
Abstract: Fn001 CI11 SOT23-6 ultrasound transducer circuit oscillator ultrasound transducer transformer medical ultrasound "application note" s4_ SOT23-6 ultrasound transducer 10MHz TQFP48
Text: IG N TSA1005 DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER S NOT FOR NEW DESIGN P 10-bit, dual-channel A/D converter in deep E D W 32 D4 IPOL 6 31 D5 E N 13 28 D8 27 D9 MSB 26 VCCBE 25 GNDBE 23 24 GNDBI DGND SELECT P e let CLK R 17 18 19 20 21 22 DGND O 14 15 16
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TSA1005
10-BIT,
20/40MSPS
2 pin connector sip2
Fn001
CI11
SOT23-6
ultrasound transducer circuit oscillator
ultrasound transducer transformer
medical ultrasound "application note"
s4_ SOT23-6
ultrasound transducer 10MHz
TQFP48
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