XH018
Abstract: No abstract text available
Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron
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XH018
XH018
18-micron
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micron sram
Abstract: No abstract text available
Text: PRESS RELEASE CYPRESS INTRODUCES ITS FIRST 0.35-MICRON SRAM Announces Working Silicon on 0.25-Micron Products SAN JOSE, Calif., November 18, 1997 - Cypress Semiconductor today introduced its first SRAM built in a 0.35-micron feature size. The introduction comes on the heels of Cypress’s first
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35-MICRON
25-Micron
CY7C1021,
35-micron
ahe10
micron sram
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m25p40vmb6txx
Abstract: M25PX64 M25P40-VMB6 M25P UID M25P40 JESD22-A114A M25P vdfpn8 MLP8 VDFPN8 package
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
m25p40vmb6txx
M25PX64
M25P40-VMB6
M25P UID
JESD22-A114A
M25P
vdfpn8
MLP8
VDFPN8 package
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rpp1k1
Abstract: No abstract text available
Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate
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XT018
XT018
18-micron
rpp1k1
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208-MIL
Abstract: mlp8 numonyx
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
208-MIL
mlp8 numonyx
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Untitled
Abstract: No abstract text available
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
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Untitled
Abstract: No abstract text available
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
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M25P40-VMB6
Abstract: 208-MIL 208mils MLP8 package M25P40-VMW6G
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
M25P40-VMB6
208-MIL
208mils
MLP8 package
M25P40-VMW6G
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Untitled
Abstract: No abstract text available
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
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M25P
Abstract: M25P40vmn6p M25PX64 mlp8 micron VFQFPN8
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
M25P
M25P40vmn6p
M25PX64
mlp8 micron
VFQFPN8
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m25p16-vmn3pb
Abstract: marking 000c m25p16vmf
Text: Micron M25P16 Serial Flash Embedded Memory Features Micron M25P16 Serial Flash Embedded Memory M25P16-V6D11, -VMC6G, -VMC6TG M25P16-VMF3PB, -VMF3TPB, -VMF6PBA M25P16-VMN3PB, -VMN3TPB M25P16-VMN6P, -VMN6PBA, -VMN6TP, -VMN6TPBA M25P16-VMP6G, -VMP6TG, -VMW6G, -VMW6TG
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M25P16
M25P16-V6D11,
M25P16-VMF3PB,
M25P16-VMN3PB,
M25P16-VMN6P,
M25P16-VMP6G,
M25P16S-VMN6P,
512Kb
09005aef8456656c
m25p16-vmn3pb
marking 000c
m25p16vmf
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vdfpn8
Abstract: No abstract text available
Text: Micron M25P16 Serial Flash Embedded Memory Features Micron M25P16 Serial Flash Embedded Memory M25P16-V6D11, -VMC6G, -VMC6TG M25P16-VMF3PB, -VMF3TPB, -VMF6PBA M25P16-VMN3PB, -VMN3TPB M25P16-VMN6P, -VMN6PBA, -VMN6TP, -VMN6TPBA M25P16-VMP6G, -VMP6TG, -VMW6G, -VMW6TG
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M25P16
M25P16-V6D11,
M25P16-VMF3PB,
M25P16-VMN3PB,
M25P16-VMN6P,
M25P16-VMP6G,
M25P16S-VMN6P,
512Kb
09005aef8456656c
vdfpn8
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M25P16-VMN6P
Abstract: mlp8 numonyx m25p16-vmn3pb M25P16-V6D11 M25P application note m25p16vmf
Text: Micron M25P16 Serial Flash Embedded Memory Features Micron M25P16 Serial Flash Embedded Memory M25P16-V6D11, -VMC6G, -VMC6TG M25P16-VMF3PB, -VMF3TPB, -VMF6PBA M25P16-VMN3PB, -VMN3TPB M25P16-VMN6P, -VMN6PBA, -VMN6TP, -VMN6TPBA M25P16-VMP6G, -VMP6TG, -VMW6G, -VMW6TG
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M25P16
M25P16-V6D11,
M25P16-VMF3PB,
M25P16-VMN3PB,
M25P16-VMN6P,
M25P16-VMP6G,
M25P16S-VMN6P,
512Kb
09005aef8456656c
M25P16-VMN6P
mlp8 numonyx
m25p16-vmn3pb
M25P16-V6D11
M25P application note
m25p16vmf
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M25P SO8W
Abstract: No abstract text available
Text: Micron M25P16 Serial Flash Embedded Memory Features Micron M25P16 Serial Flash Embedded Memory M25P16-V6D11, -VMC6G, -VMC6TG M25P16-VMF3PB, -VMF3TPB, -VMF6PBA M25P16-VMN3PB, -VMN3TPB M25P16-VMN6P, -VMN6PBA, -VMN6TP, -VMN6TPBA M25P16-VMP6G, -VMP6TG, -VMW6G, -VMW6TG
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M25P16
M25P16-V6D11,
M25P16-VMF3PB,
M25P16-VMN3PB,
M25P16-VMN6P,
M25P16-VMP6G,
M25P16S-VMN6P,
512Kb
09005aef8456656c
M25P SO8W
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toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective
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PT6042
Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
Text: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS
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VGC450/VGC453
VGC453
VGC450
PT6042
model values for 0.18 micron technology cmos
nd02d2
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integrated circuit TL 2262
Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology
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VSC470
integrated circuit TL 2262
PT6042
180 nm CMOS standard cell library Synopsys
compass ic
ND02D2
0.03 um CMOS technology
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PC5004
Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
Text: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz
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55-micron
PC5004
VGC650
VGC6P52
VGC600
IN01D1
NR02D1
QFP 128 bonding
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PT6045
Abstract: VSC370 PT6005
Text: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology
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VSC370
85-micron
000fiö
T-42-41
PT6045
PT6005
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PDF
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130 nm CMOS standard cell library
Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
Text: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS
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VGC450/VGC453
VGC453
VGC450
130 nm CMOS standard cell library
180 nm CMOS standard cell library Synopsys
130 nm CMOS standard cell library ST
C4002-1
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VGT300039
Abstract: PT6045 VGT300022 PT6005
Text: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology
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T3flfl34?
VGT350/VGT353
85-micron
VGT350/353
VGT300039
PT6045
VGT300022
PT6005
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MwT-273
Abstract: mwt 871 MwT-270 sii 021 s-parameter MWT273HP
Text: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL7GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally
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QQQ0S51
MwT-273
mwt 871
MwT-270
sii 021
s-parameter
MWT273HP
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PDF
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F4029
Abstract: No abstract text available
Text: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally
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OCR Scan
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651-67Q0
F4029
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PDF
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PT6042
Abstract: No abstract text available
Text: V L S I TECHNOLOGY I NC H7E J> T3flfl347 D a 0 ñ ñ 2 2 7 V L S I Tech n o lo gy , in c . - r - m PRELIMINARY VTI - m VSC450 SERIES O.8-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon
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OCR Scan
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T3flfl347
VSC450
T-42-41
PT6042
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PDF
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