BXL9812
Abstract: No abstract text available
Text: Microwave Limiting Amplifier 8 to 12 GHz Model BXL9812 FEATURES • Reverse Bias Protection • Input Voltage Regulator • Laser Sealed Housing The Model BXL9812 is standard high frequency limiting amplifier covering 8 GHz to 12 GHz. This two stage design, utilizes
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BXL9812
BXL9812
MILSTD-883
SXL9812.
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BXHF1198
Abstract: high frequency
Text: Model # BXHF1198 High Frequency Microwave Amplifier Frequency Range: 8 to 12 GHz Features • High Frequency : 8-12 GHz • High Gain: 30 dB Typical • Laser Welded Housings for Ultimate Environmental Protection • Internal Voltage Regulator • RoHS Compliant Option: BXHF1198LF
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BXHF1198
BXHF1198LF
BXHF1198
MILSTD-883
SXHF1198.
high frequency
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BXHF1202
Abstract: high frequency
Text: Model # BXHF1202 High Frequency Microwave Amplifier Frequency Range: 8-12 GHz Features • High Frequency and Broad Bandwidth: 8-12 GHz • High Gain: 27 dB • Laser Welded Housing for Ultimate Environmental Protection • Internal Voltage Regulator • RoHS Compliant Option: Model BXHF1202LF
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BXHF1202
BXHF1202LF
BXHF1202
MIL-STD-883
SXHF1202.
high frequency
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Untitled
Abstract: No abstract text available
Text: HMC461LP3 v00.1202 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain
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HMC461LP3
HMC461LP3
HMC455LP3
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HMC455LP3
Abstract: HMC461LP3 hmc - 020
Text: HMC461LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain
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HMC461LP3
HMC461LP3
HMC455LP3
HMC455LP3
hmc - 020
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CGM-08-4001
Abstract: No abstract text available
Text: CGM-08-4001 Module Amplifier 4 GHz - 8 GHz This Module Amplifier offers exceptional performance over the band 4 GHz to 8 GHz with 10 dBm P1dB output power and 12 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CGM-08-4001
CGM-08-4001
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082005
Abstract: TGM-08-2005
Text: TGM-08-2005 Module Amplifier 2 GHz - 8 GHz This Module Amplifier offers exceptional performance over the band 2 GHz to 8 GHz with 14 dBm P1dB output power and 12 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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TGM-08-2005
082005
TGM-08-2005
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CGM-08-2005
Abstract: No abstract text available
Text: CGM-08-2005 Module Amplifier 2 GHz - 8 GHz This Module Amplifier offers exceptional performance over the band 2 GHz to 8 GHz with 14 dBm P1dB output power and 12 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CGM-08-2005
CGM-08-2005
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CGM-10-8001
Abstract: No abstract text available
Text: CGM-10-8001 Module Amplifier 8 GHz - 10 GHz This Module Amplifier offers exceptional performance over the band 8 GHz to 10 GHz with 10 dBm P1dB output power and 12 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CGM-10-8001
CGM-10-8001
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Untitled
Abstract: No abstract text available
Text: CHA3010 8-12 GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA3010 is a three-stage monolithic gain controlled amplifier. The circuit is manufactured with a MESFET process: 0.5µm gate length, via holes through the substrate, air bridges and
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CHA3010
CHA3010
15dBm
DSCHA30107009
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bp 1361
Abstract: diagram of bp 1361 of bp 1361
Text: CHA2010 8-12 GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2010 is a three-stage monolithic gain controlled amplifier. The circuit is manufactured with a MESFET process: 0.5µm gate length, via holes through the substrate, air bridges and
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CHA2010
CHA2010
13dBm
DSCHA20107009
bp 1361
diagram of bp 1361
of bp 1361
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HMC490LP5
Abstract: No abstract text available
Text: HMC490LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC490LP5 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2.5 dB • Point-to-Point Radios
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HMC490LP5
HMC490LP5
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Untitled
Abstract: No abstract text available
Text: v00.0603 MICROWAVE CORPORATION HMC476MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC476MP86 is an ideal RF/IF gain block & LO or PA driver for: P1dB Output Power: +12 dBm • Cellular / PCS / 3G
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HMC476MP86
HMC476MP86
The087
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Untitled
Abstract: No abstract text available
Text: HMC396 v01.1007 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Typical Applications Features An excellent cascadable 50 Ohm Gain Block or LO Driver for: Gain: 12 dB • Microwave & VSAT Radios Stable Gain Over Temperature
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HMC396
HMC396
025mm
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HMC396
Abstract: No abstract text available
Text: HMC396 v01.1007 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Typical Applications Features An excellent cascadable 50 Ohm Gain Block or LO Driver for: Gain: 12 dB • Microwave & VSAT Radios Stable Gain Over Temperature
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HMC396
HMC396
025mm
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HMC396
Abstract: No abstract text available
Text: HMC396 v02.0109 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Typical Applications Features An excellent cascadable 50 Ohm Gain Block or LO Driver for: Gain: 12 dB • Microwave & VSAT Radios Stable Gain Over Temperature
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HMC396
HMC396
025mm
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Untitled
Abstract: No abstract text available
Text: HMC396 v02.0109 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Typical Applications Features An excellent cascadable 50 Ohm Gain Block or LO Driver for: Gain: 12 dB • Microwave & VSAT Radios Stable Gain Over Temperature
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HMC396
HMC396
025mm
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HMC476MP86
Abstract: No abstract text available
Text: v00.0603 MICROWAVE CORPORATION HMC476MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC476MP86 is an ideal RF/IF gain block & LO or PA driver for: P1dB Output Power: +12 dBm • Cellular / PCS / 3G
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HMC476MP86
HMC476MP86
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CHA2391
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Text: CHA2391 RoHS COMPLIANT 36-40GHz Very Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2391 is a two-stage wide band monolithic low noise amplifier. IN OUT Vg 1 It is supplied in chip form. Main Features Gain dB Vg 2 20 5 16 4 12 3 8
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CHA2391
36-40GHz
CHA2391
36-40GHz
20dBm
DSCHA23912240
-28-Aug
MS11
MS12
MS21
MS22
PS11
PS12
PS22
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PS11
Abstract: PS12 PS22 MS22 CHA2391 MS11 MS12 MS21 top 122
Text: CHA2391 36-40GHz Very Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2391 is a two-stage wide band monolithic low noise amplifier. IN OUT Vg 1 It is supplied in chip form. Main Features Gain dB Vg 2 20 5 16 4 12 3 8 2 4 1 30 31 32
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CHA2391
36-40GHz
CHA2391
36-40GHz
20dBm
DSCHA23912240
-28-Aug
PS11
PS12
PS22
MS22
MS11
MS12
MS21
top 122
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A2494
Abstract: CHA2494-QEG AN0017 qfn 44 PACKAGE footprint
Text: Advanced Information QFN packaged 34-44GHz Low Noise Amplifier NC GND VG NC NC NC GaAs Monolithic Microwave IC 12 11 10 9 8 7 5 RF OUT RF IN 15 4 GND GND 16 3 NC NC 17 2 NC 18 1 NC NC 19 20 21 22 23 24 NC 14 NC GND NC GND GND 6 VD 13 NC NC UMS is developing a packaged monolithic 34-44GHz low noise amplifier delivering
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34-44GHz
22dBm
V/120mA.
AI10010194
AI1001
ES-CHA2494-QEG
A2494
CHA2494-QEG
AN0017
qfn 44 PACKAGE footprint
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"15 GHz" power amplifier 41dBm
Abstract: AN0017 MO-220
Text: Advance Information: AI1013 QFN Packaged 13-15.5GHz High Power Amplifier D1 GND D2 NC D3 NC D4 GND GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 NC 3 22 NC GND 4 21 GND RFIN 5 20 RFOUT GND 6 19 GND NC 7 18 NC NC 8 17 NC 9 10 11 12 13 14 15 16 GND NC
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AI1013
AI10131270
ES-CHA6252-QFG
"15 GHz" power amplifier 41dBm
AN0017
MO-220
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A3688A
Abstract: UMS A6250 ES-CHA6250-QFG A3667A 7663 a3688 A6250 AN0017 MO-220
Text: Advance Information: AI1019 QFN Packaged 6-9GHz High Power Amplifier NC NC VD1 GND VD2 NC GND VD3 GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 GND 3 22 GND RF IN 4 21 RFOUT GND 5 20 GND NC 6 19 NC NC 7 18 NC NC 8 17 NC 9 10 11 12 13 14 15 16 NC NC
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AI1019
A3688A
A3667A
A7663A
AI10191270
ES-CHA6250-QFG
A3688A
UMS A6250
ES-CHA6250-QFG
A3667A
7663
a3688
A6250
AN0017
MO-220
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HMC407MS8G
Abstract: amplifier TRANSISTOR 12 GHZ 1202 transistor
Text: HMC407MS8G v01.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 5.0 - 7.0 GHz applications: Gain: 15 dB • UNII 28% PAE
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HMC407MS8G
HMC407MS8G
amplifier TRANSISTOR 12 GHZ
1202 transistor
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