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    MICROWAVE FET Search Results

    MICROWAVE FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation
    ISL55014IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    ISL55012IEZ-EVAL Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Evaluation Board Visit Renesas Electronics Corporation
    ISL55015IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation

    MICROWAVE FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WATKINS JOHNSON mixer

    Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
    Text: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single


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    6647a

    Abstract: 2082-2700-00 560-7A50 attenuator 3dB DC 18GHz wiltron 6647A Microwave Generator SWR BRIDGE metal detector vlf HP-85
    Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line


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    6647a

    Abstract: uhf microwave fet 560-7A50 Logarithmic Amplifier detector 18GHz metal detector vlf 2082-2700-00 2082-2700 7082 coil gold detector decibel meter
    Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line


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    560-7A50

    Abstract: 6647a Shielded Microstrip uhf microwave fet 2082-2700-00 7082 coil gold detector decibel meter Logarithmic Amplifier detector 18GHz series and parallel resonance
    Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line


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    microwave transistor bfy193

    Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		PDF MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420

    SIEMENS MICROWAVE RADIO 8 GHz

    Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		PDF MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    switches

    Abstract: anzac mixers GAAS FET CROSS REFERENCE GAAS FET rf switch CROSS REFERENCE PIN DIODE DRIVER CIRCUITS PIN DIODE SPDT DRIVER CIRCUITS semiconductors cross reference TWD5032 Microwave PIN diode ANZAC CROSS REFERENCE
    Text: RF & Microwave Switches Exceeding Expectations Spectrum Microwave, a leader in RF Component design, continues this rich microwave heritage with its line-up of broadband, high isolation switches. We believe that designing switches which exceed customer expectations


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    AC2092

    Abstract: AC2091 M1-0412ME M1-0420ME UTO507 TL9014 M1_0412ME AC545 GPD462 AVANTEK utc5
    Text: Teledyne / Cougar Cross Reference List Cougar SPECTRUM MICROWAVE Cougar SPECTRUM MICROWAVE Cougar SPECTRUM MICROWAVE AC105 ACH107 AP148 AC251 AC262 AC263 AC271 AC272 AC273 AC281 AC282 AC293 AP294 AC305 AC345 AC347 AP348 AR356 AC378 AC379 AC380 AC381 AC382


    Original     		PDF AC105 ACH107 AP148 AC251 AC262 AC263 AC271 AC272 AC273 AC281 AC2092 AC2091 M1-0412ME M1-0420ME UTO507 TL9014 M1_0412ME AC545 GPD462 AVANTEK utc5

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    1658 NEC

    Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D

    UPC8236

    Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic

    univision technology

    Abstract: Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch Microwave power GaAs FET data HMC220MS8 ka-band mixer HMC143 HMC259 HMC264CB1 HMC267QS16G
    Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION JUNE 1999 Ball Grid Array SMT mmWave Products INSIDE. *12 NEW PRODUCTS RELEASED! Designers of millimeter and microwave radios now have access to advanced MMICs in a rugged SMT packaged format. Hittite Microwave has


    Original     		PDF HMC258CB1 HMC264CB1 HMC265CB1 univision technology Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch Microwave power GaAs FET data HMC220MS8 ka-band mixer HMC143 HMC259 HMC264CB1 HMC267QS16G

    MwT GaAs Device Technology

    Abstract: Gunn Diode gunn effect fet dro 10 ghz system on chip x-band x-band dro
    Text: MicroWave Technology, Inc. GENERAL INFORMATION MwT’s GaAs Device Technology MicroWave Technology Inc. was established in 1982 by two senior technologists with years of hands-on experiences in Gallium Arsenide GaAs epitaxial material growth and microwave device design and processes.


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    high power fet amplifier schematic

    Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
    Text: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding


    Original     		PDF 30FETs 20FETs 12-Watt high power fet amplifier schematic GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal

    Untitled

    Abstract: No abstract text available
    Text: Microwave Switch SP4T Broadband GaAs RF / Microwave Switch 1-10533 Frequency 10 MHz to 3 GHz Low Insertion Loss Fast Switching Integral TTL Drivers Temperature Range -40 to +85ºC The Pascall SP4T Broadband RF / Microwave Switch, first of a new series, uses


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    GaAs FET amplifer

    Abstract: AW1218301N AW612304 AP45401 ph01 AL26501 AL618801 AW218201N AW26204 AW26201N
    Text: MicroWave Technology, Inc. MICROWAVE AMPLIFIERS Standard Amplifier Capability MicroWave Technology, Inc. has been a leading manufacturer of high performance amplifiers since it was founded in 1982. MwT’s principal strengths are derived from an in-house quarter micron Gallium Arsenide device


    Original     		PDF PH-01 GaAs FET amplifer AW1218301N AW612304 AP45401 ph01 AL26501 AL618801 AW218201N AW26204 AW26201N

    Untitled

    Abstract: No abstract text available
    Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of


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    TPM2323-60

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TPM2323-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=48.0dBm at 2.4GHz „ HIGH GAIN G1dB=10.0dB at 2.4GHz „ PARTIALLY MATCHED TYPE „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS


    Original     		PDF TPM2323-60 300mA IDS12 IDS12A TPM2323-60

    371 fet

    Abstract: TIM1414-4LA-371
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


    OCR Scan     		PDF TIM1414-4LA-371 371 fet TIM1414-4LA-371

    TIM1414-4LA-371

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


    OCR Scan     		PDF TIM1414-4LA-371 TIM1414-4LA-371

    S9G66A

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB


    OCR Scan     		PDF S9G66A S9G66A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET Non-Matched S9666A Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 25° C Ì CHARACTERISTICS Output Power at IdB Compression Point Power Gain at IdB Compression Point Drain Current


    OCR Scan     		PDF S9666A

    S9G08A

    Abstract: 2-16G6A
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S9G08A TECHNICAL DATA FEATURES LOW DISTORTION PARTIALLY MATCHED TYPE HIGH GAIN G idB = 13 dB HERMETICALLY SEALED PACKAGE Padj = -74 dBc@ Po = 38 dBm RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS


    OCR Scan     		PDF S9G08A 38dBm, 600kHz S9G08A 2-16G6A