Untitled
Abstract: No abstract text available
Text: A1020-3 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 20m Peak Curr. Tol.2.0m Total Cap. (F)3.0p Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq10G Series Induct. (H)100p R(series) (Ohms)1.7 Neg Resist.12 Semiconductor MaterialGaAs
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A1020-3
Min12
Freq10G
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Untitled
Abstract: No abstract text available
Text: AB307 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 200u Peak Curr. Tol. Total Cap. (F)700f Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak950m Resist. Cutoff Freq Series Induct. (H)300p R(series) (Ohms) Neg Resist. Semiconductor MaterialGaAs Maximum Operating Temp (øC)100
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AB307
Min12
Ipeak950m
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Untitled
Abstract: No abstract text available
Text: MS1573 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol.20m Total Cap. (F).80p Ip/Iv Min12 Vp60m Vv350m Fwd Volt @Ipeak500m Resist. Cutoff Freq20G Series Induct. (H).10n R(series) (Ohms)7.0 Neg Resist.30 Semiconductor MaterialGaSb
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MS1573
Min12
Vp60m
Vv350m
Ipeak500m
Freq20G
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Untitled
Abstract: No abstract text available
Text: S1210-3 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.0m Peak Curr. Tol.100u Total Cap. (F)1.0p Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq12G Series Induct. (H)100p R(series) (Ohms)4.0 Neg Resist.65 Semiconductor MaterialGaSb
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S1210-3
Min12
Freq12G
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Untitled
Abstract: No abstract text available
Text: MS1571 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol.200u Total Cap. (F)1.5p Ip/Iv Min12 Vp60m Vv350m Fwd Volt @Ipeak500m Resist. Cutoff Freq12G Series Induct. (H)100p R(series) (Ohms)5.0 Neg Resist.30 Semiconductor MaterialGaSb
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MS1571
Min12
Vp60m
Vv350m
Ipeak500m
Freq12G
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Untitled
Abstract: No abstract text available
Text: A1010-3 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol.1.0m Total Cap. (F)2.0p Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq10G Series Induct. (H)100p R(series) (Ohms)1.8 Neg Resist.20 Semiconductor MaterialGaAs
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A1010-3
Min12
Freq10G
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MS1570
Abstract: No abstract text available
Text: MS1570 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol.20m Total Cap. (F)2.5p Ip/Iv Min12 Vp60m Vv350m Fwd Volt @Ipeak500m Resist. Cutoff Freq8.0G Series Induct. (H).10n R(series) (Ohms)5.0 Neg Resist.30 Semiconductor MaterialGaSb
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MS1570
Min12
Vp60m
Vv350m
Ipeak500m
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Untitled
Abstract: No abstract text available
Text: MS1555 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 200m Peak Curr. Tol.10m Total Cap. (F)200p Ip/Iv Min12 Vp145m Vv640m Fwd Volt @Ipeak1.0 Resist. Cutoff Freq Series Induct. (H).30n R(series) (Ohms).20 Neg Resist.1.3 Semiconductor MaterialGaAs
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MS1555
Min12
Vp145m
Vv640m
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Untitled
Abstract: No abstract text available
Text: 112530A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol. Total Cap. (F) Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H)100p R(series) (Ohms)7.0 Neg Resist.25 Semiconductor MaterialGaAs Maximum Operating Temp (øC)100’
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12530A
Min12
Freq30G
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Untitled
Abstract: No abstract text available
Text: AB107 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 50u Peak Curr. Tol. Total Cap. (F)700f Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak800m Resist. Cutoff Freq Series Induct. (H)300p R(series) (Ohms) Neg Resist. Semiconductor MaterialGaAs Maximum Operating Temp (øC)100
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AB107
Min12
Ipeak800m
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Untitled
Abstract: No abstract text available
Text: 102530A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol. Total Cap. (F) Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H) R(series) (Ohms)7.0 Neg Resist.25 Semiconductor MaterialGaAs Maximum Operating Temp (øC)100õ
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02530A
Min12
Freq30G
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Untitled
Abstract: No abstract text available
Text: MS1554 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 100m Peak Curr. Tol.5.0m Total Cap. (F)100p Ip/Iv Min12 Vp140m Vv630m Fwd Volt @Ipeak1.0 Resist. Cutoff Freq2.0G Series Induct. (H).30n R(series) (Ohms).30 Neg Resist.2.5 Semiconductor MaterialGaAs
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MS1554
Min12
Vp140m
Vv630m
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Untitled
Abstract: No abstract text available
Text: MS1572 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol.20m Total Cap. (F)1.0p Ip/Iv Min12 Vp60m Vv350m Fwd Volt @Ipeak500m Resist. Cutoff Freq15G Series Induct. (H).10n R(series) (Ohms)6.0 Neg Resist.30 Semiconductor MaterialGaSb
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MS1572
Min12
Vp60m
Vv350m
Ipeak500m
Freq15G
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Untitled
Abstract: No abstract text available
Text: MA4C563B Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 200m Peak Curr. Tol.20m Total Cap. (F)200p Ip/Iv Min12 Vp225m Vv550m Fwd Volt @Ipeak1.2 Resist. Cutoff Freq Series Induct. (H)300p R(series) (Ohms) Neg Resist. Semiconductor MaterialGaAs
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MA4C563B
Min12
Vp225m
Vv550m
StyleDO-25var
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Untitled
Abstract: No abstract text available
Text: 5082-2602 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandC Test Freq8.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0 Maximum Conversion Loss (dB)
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Min125
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HX8340B
Abstract: HX8340-B mx 362-0
Text: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver
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HX8340-B
176RGB
224October,
225October,
HX8340B
mx 362-0
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16c84
Abstract: pic 12c508 motor ac motor speed control using 12c508 pic 12c508 applications 12C508 Electromechanical Timer Replacement application note PIC12C508 16Cxx SEC1202 12c508 timer oh happy day
Text: Electromechanical Switch Replacement Bright Idea Light Timer, Junior Author: Scott A. Sumner Eveningware, Inc. Sterling Heights, MI email: [email protected] APPLICATION OPERATION Overview The “Bright Idea” Light Timer, Jr. BILTJR is a digital version of the venerable lamp on/off timers that you use
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DS40160A/2
015-page
16c84
pic 12c508 motor
ac motor speed control using 12c508
pic 12c508 applications
12C508 Electromechanical Timer Replacement
application note PIC12C508
16Cxx
SEC1202
12c508 timer
oh happy day
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ZX4125
Abstract: ZX4125P ZX4125P-2 nemerix PNMRX600 zx-4125 ZX4125P application notes WONDE PROUD PNMRX100 NMEA-0183
Text: Datasheet WONDE PROUD ZX4125 ZX4125/ZX4125P ZX4125P ZX4125/ZX4125P Ultra Low Power High Sensitivity GPS Module GENERAL DESCRIPTION MAIN FEATURES The ZX4125/ZX4125P patch on top is a high Built-in high performance NEMERIX chipset Average Cold Start in 60 seconds
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ZX4125
ZX4125/ZX4125P
ZX4125P
ZX4125
ZX4125P-4
ZX4125P-2
NMEA-0183
ZX4125P
ZX4125P-2
nemerix
PNMRX600
zx-4125
ZX4125P application notes
WONDE PROUD
PNMRX100
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HX8353D
Abstract: HX8353
Text: DATA SHEET DOC No. HX8353-D-DS HX8353-D 132RGB x 162 dots, 262K color, with Internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 Apr, 2010 HX8353-D 132RGB x 162 dot, 262K Color, with Internal GRAM, TFT Mobile Single Chip Driver List of Contents
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HX8353-D-DS
HX8353-D
132RGB
HX8353D
300um
250um
227Apr,
HX8353
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Untitled
Abstract: No abstract text available
Text: 管壳外形尺寸图 单位：mm ≥ ≥ TO-8-12 ≥ TO-8A TO-8A-1 ≥ ≥ TO-8B ≥ TO-8C TO-8D ≥ ≥ TO-8E ≥ TO-8F TO-8G SM64C SM64D ≥ TO-8H 2 1 2 2 3 1 4 3 1 3 4 4 6 5 SMO-8C SMO-8D SMO-8E SP-1 SP-1A SP-2 TO-8 封装管壳系列压片尺寸表 单位:mm
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O-8-12
SM64C
SM64D
O-8-12
CRO2000MHz
4M2H12
HD-32A
HD-28C
HE883
HD-28A
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ZX4125
Abstract: GPS receiver module ZX4125P ZX4125P application notes rs232 protocol ZX4125P-2 nmea codes for GPS clock ZX4125P-4 PNMRX108 1pps
Text: Contents 1. INTRODUCTION… … … .… … … … … … … … … … … … … … … … … … … .… . 2 1.1 OVERVIEW… … … … … .… … … … … … … … … … … … … … … … … … 2 1.2 MAIN FEATURES… .… … … … … … … … … … … … … … … … … … .… . 2
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PNMRX603
PNMRX603
EGM96
ZX4125
GPS receiver module
ZX4125P
ZX4125P application notes
rs232 protocol
ZX4125P-2
nmea codes for GPS clock
ZX4125P-4
PNMRX108
1pps
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HX8352C
Abstract: hx8352
Text: DOC No. HX8352-C(T -DS ) HX8352-C(T) 240RGB x 432 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Temporary version 01 April, 2010 HX8352-C(T) 240RGB x 432 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents
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HX8352-C
240RGB
Bx432dots,
HX8352-C000
161April,
HX8352C
hx8352
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SG402
Abstract: No abstract text available
Text: SG402 フォトインタラプタ PHOTOINTERRUPTERS SG402は高出力赤外発光ダイオードと高感度フォトトランジスタを組合わせたアクチュエータ付き透過型フォトイ ンタラプタです。複写機、ファクシミリ等の紙検知に最適です。
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SG402
SG402
85max
Min12
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Untitled
Abstract: No abstract text available
Text: L M H 66 2 8Q M L LMH6628QML Dual Wideband, Low Noise, Voltage Feedback Op Amp T ex a s In s t r u m e n t s Literature Number: SNOSAQ1A a l Q w Sem iconductor LMH6628QML Dual Wideband, Low Noise, Voltage Feedback Op Amp General Description Features The National LMH6628 is a high speed dual op amp that of
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LMH6628QML
LMH6628QML
LMH6628
LMH6628Â
300MHz
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