Untitled
Abstract: No abstract text available
Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source
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75N60C
OT-227
20100609c
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75n60
Abstract: M4x8 UPS SIEMENS C160 ID100
Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source
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75N60C
OT-227
20100609c
75n60
M4x8
UPS SIEMENS
C160
ID100
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DMA150YA1600NA
Abstract: DMA150YC1600NA
Text: DMA 150 YA 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier Half 3~ Bridge, Common Anode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline
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OT-227B
60747and
DMA150YA1600NA
DMA150YC1600NA
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DMA150YA1600NA
Abstract: DMA150YC1600NA
Text: DMA 150 YC 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier half 3~ Bridge, Common Cathode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline
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OT-227B
60747and
DMA150YA1600NA
DMA150YC1600NA
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DMA150E1600NA
Abstract: No abstract text available
Text: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number 1 3 2 4 Backside: Isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline rCu base plate internal DCB isolated
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OT-227B
160LLIMETERS
60747and
DMA150E1600NA
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din 7985 B
Abstract: SCREW din 7985 din 7985
Text: DSEI 2x 60-04C Fast Recovery Epitaxial Diode FRED IFAVM = 2x 60 A VRRM = 400 V trr = 35 ns 2 VRSM VRRM V V 440 400 1 miniBLOC, SOT-227 B Type DSEI2x60-04C 3 4 E72873 Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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60-04C
DSEI2x60-04C
OT-227
E72873
O-247
20121212a
din 7985 B
SCREW din 7985
din 7985
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DSA300I200NA
Abstract: SOT227B IXYS DSA 300 SOT227B package DSA300I100NA DSA300I45NA DSa300i DSA300 Minibloc m4x8 din 934
Text: DSA 300 I 100 NA tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 100 V 300 A 0.79 V Part number DSA 300 I 100 NA 2 1 3 4 Backside: Isolated Features / Advantages: Applications: Package:
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OT-227B
60747and
20091002a
DSA300I200NA
SOT227B
IXYS DSA 300
SOT227B package
DSA300I100NA
DSA300I45NA
DSa300i
DSA300
Minibloc m4x8
din 934
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DMA150YA1600NA
Abstract: dma150 marking YC DIN7985 DMA150YC1600NA
Text: DMA 150 YC 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier half 3~ Bridge, Common Cathode Part number 1 DMA 150 YC 1600 NA 3 1600 V 150 A 1.12 V 2 4 Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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OT-227B
60747and
DMA150YA1600NA
dma150
marking YC
DIN7985
DMA150YC1600NA
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DMA150YA1600NA
Abstract: marking code YA DMA150YC1600NA
Text: DMA 150 YA 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier Half 3~ Bridge, Common Anode Part number 1 DMA 150 YA 1600 NA 3 1600 V 150 A 1.12 V 2 4 Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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OT-227B
60747and
DMA150YA1600NA
marking code YA
DMA150YC1600NA
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DHG5
Abstract: din 7985 DHG50X1200 DHG50X1200NA
Text: DHG 50 X 1200 NA tentative V RRM = 1200 V I FAV = 2x 25 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 50 X 1200 NA Backside: Isolated Features / Advantages: Applications:
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60747and
DHG5
din 7985
DHG50X1200
DHG50X1200NA
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DHG100X1200NA
Abstract: SCREW din 7985
Text: DHG 100 X 1200 NA advanced V RRM = 1200 V I FAV = 2x 50 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 100 X 1200 NA Backside: Isolated Features / Advantages: Applications:
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60747and
DHG100X1200NA
SCREW din 7985
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DHG100X1200NA
Abstract: sot 227b diode fast din 7985 DHG10
Text: DHG 100 X 1200 NA tentative V RRM = 1200 V I FAV = 2x 50 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 100 X 1200 NA Backside: Isolated Features / Advantages: Applications:
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DHG100X1200NA
sot 227b diode fast
din 7985
DHG10
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DH2x60-18A
Abstract: DH2x61-18A diode MARKING CODE 18A Minibloc m4x8 M4x8 DH2X6
Text: DH2x60-18A tentative V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A tbd ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package:
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DH2x60-18A
60747and
DH2x60-18A
DH2x61-18A
diode MARKING CODE 18A
Minibloc m4x8
M4x8
DH2X6
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DMA150E1600NA
Abstract: DMA-150 DIN7985 din 7985
Text: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number DMA 150 E 1600 NA 1 3 2 4 Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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OT-227B
60747and
DMA150E1600NA
DMA-150
DIN7985
din 7985
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IXA60IF1200NA
Abstract: din 7985
Text: IXA60IF1200NA preliminary I C25 = = VCES VCE sat typ = XPT IGBT Copack 84 A 1200 V 1.8 V C (2) Part number IXA60IF1200NA (G) 1 E (3) Features / Advantages: Applications: Package: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage
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IXA60IF1200NA
60747and
IXA60IF1200NA
din 7985
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IXA60IF1200
Abstract: No abstract text available
Text: IXA60IF1200NA I C25 = = VCES VCE sat typ = XPT IGBT Copack 88 A 1200 V 1.8 V C (3) Part number (G) 2 E (1+4) Features / Advantages: Applications: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through)
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IXA60IF1200NA
Switched-mod1300
60747and
20100623a
IXA60IF1200
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IXA60IF1200NA
Abstract: marking code C4 Sot 23-5 din 7985 SCREW din 7985 ixa60if1200 60if1200
Text: IXA60IF1200NA I C25 = = VCES VCE sat typ = XPT IGBT Copack 88 A 1200 V 1.8 V C (3) Part number IXA60IF1200NA (G) 2 E (1+4) Features / Advantages: Applications: Package: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage
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IXA60IF1200NA
60747and
20100623a
IXA60IF1200NA
marking code C4 Sot 23-5
din 7985
SCREW din 7985
ixa60if1200
60if1200
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Untitled
Abstract: No abstract text available
Text: DSEP2x25-12C V RRM = 1200 V I FAV = 2x 25 A t rr = 15 ns HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Parallel legs with series connected dice Part number DSEP2x25-12C Backside: isolated Features / Advantages:
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DSEP2x25-12C
Free00
2x25-12C
60747and
20110201a
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CLA100PD1200NA
Abstract: No abstract text available
Text: CLA 100 PD 1200 NA advanced V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Phase leg Part number 4 3 1 1200 V 100 A 157 A 2 Backside: isolated Applications: Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability
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OT-227B
60747and
CLA100PD1200NA
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