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    ROHM Semiconductor SML-D12M8WT86M

    Standard LEDs - SMD SMD Yellow/Green 10-63 mcd
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    TTI SML-D12M8WT86M Reel 402,000 3,000
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    ROHM Semiconductor SML-P11MTT86R

    Standard LEDs - SMD ULTRA COMPACT YELLOW-GREEN
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    TTI SML-P11MTT86R Reel 110,000 5,000
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    ROHM Semiconductor SML-P12MTT86R

    Standard LEDs - SMD MINI-MOLD ULTRA COMPACT YELLOW
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    TTI SML-P12MTT86R Reel 60,000 5,000
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    ROHM Semiconductor SML-D12Y1WT86

    Standard LEDs - SMD Yellow 590nm 100mcd Vf 2.2V Pd 54mW
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    TTI SML-D12Y1WT86 Reel 33,000 3,000
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    ROHM Semiconductor SML-D12Y8WT86P

    Standard LEDs - SMD SMD Yellow 25-160 mcd
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    TTI SML-D12Y8WT86P Reel 24,000 3,000
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    MINIMOLD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPC2745TB

    Abstract: UPC2745TB-E3 UPC2746TB UPC2746TB-E3 marking C1R NEC
    Text: 3 V, SUPER MINIMOLD UPC2745TB SILICON MMIC WIDEBAND AMPLIFIER UPC2746TB FEATURES TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package GAIN vs. FREQUENCY 25 • LOW SUPPLY VOLTAGE: VCC = 1.8 to 3.3 V • HIGH ISOLATION:


    Original     		PDF UPC2745TB UPC2746TB OT-363 UPC2745TB: UPC2746TB: UPC2745TB UPC2745TB-E3 UPC2746TB UPC2746TB-E3 marking C1R NEC

    2SC5007

    Abstract: 2SC5010 nec 5201 3771 nec
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA840TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to


    Original     		PDF PA840TC PA840TC 2SC5010, 2SC5007) 2SC5007 2SC5010 nec 5201 3771 nec

    2SC5436

    Abstract: 2SC5668
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA844TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5436, 2SC5668)


    Original     		PDF PA844TC 2SC5436, 2SC5668) S21e2 2SC5436 2SC5668 PA844 2SC5436 2SC5668

    2SC5436

    Abstract: 2SC5600 NEC 821
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821

    NESG3031M14

    Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M14 NESG3031M14-A NESG3031M14-T3 NESG3031M14 NESG3031M14-A NESG3031M14-T3-A

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2710TB 5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V


    Original     		PDF OT-363 UPC2710TB UPC2710TB UPC2710T, UPC2710TB-E3-A 24-Hour

    2SC5603

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA893TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • Built-in high gain transistor fT = 13.5 GHz TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA893TD S21e2 2SC5603) 2SC5603 PA893TD-T3 2SC5603

    UPC2791TB-E3

    Abstract: UPC2792TB-E3 mmic e3 UPC2791TB UPC2792TB Package Marking C2s marking C2s MMIC WIDE-BAND AMPLIFIER sot-363
    Text: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2791TB UPC2792TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V


    Original     		PDF UPC2791TB UPC2792TB UPC2791TB: UPC2792TB: UPC2791TB UPC2792TB UPC2791TB-E3 UPC2792TB-E3 mmic e3 Package Marking C2s marking C2s MMIC WIDE-BAND AMPLIFIER sot-363

    2SC5675

    Abstract: 2SC5675-T1 APPLICATION OF IC 7492
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5675 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package ORDERING INFORMATION


    Original     		PDF 2SC5675 2SC5675-T1 2SC5675 2SC5675-T1 APPLICATION OF IC 7492

    2SC5435

    Abstract: 2SC5437 NEC 2505 nj
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor


    Original     		PDF PA836TD 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 NEC 2505 nj

    2SC5435

    Abstract: 2SC5786 NEC 7815
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor


    Original     		PDF PA860TC 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 2SC5435 2SC5786 NEC 7815

    2SC5436

    Abstract: 2SC5786 4550 nec IC 7432 data
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor


    Original     		PDF PA861TC 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 2SC5436 2SC5786 4550 nec IC 7432 data

    2SC5604

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted


    Original     		PDF 2SC5604 S21e2 2SC5604-T3 2SC5604

    NEC 9712

    Abstract: 2SC5676
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA872TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC operation fT = 5.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA872TD S21e2 2SC5676) 2SC5676 PA872TD-T3 NEC 9712 2SC5676

    Untitled

    Abstract: No abstract text available
    Text: 3 V, SUPER MINIMOLD UPC2749TB 1900 MHz SI RFIC AMPLIFIER FEATURES GAIN vs. FREQUENCY AND TEMPERATURE • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 25 VCC = 3.0 V • GAIN: 16 dB TYP 20 • NOISE FIGURE: 4.0 dB TYP DESCRIPTION The UPC2749TB is a Silicon RF Integrated Circuit which is


    Original     		PDF UPC2749TB OT-363 UPC2749T, OT-363ttom UPC2749TB-E3 24-Hour

    nec 2401

    Abstract: UPC3215TB
    Text: 5V, SUPER MINIMOLD UPC3215TB SI MMIC WIDEBAND AMPLIFIER INSERTION POWER GAIN vs. FREQUENCY FEATURES • WIDEBAND RESPONSE: fu = 2.9 GHz TYP at 3dB bandwidth Noise Figure, NF dB 25 20 Gain, GS (dB) • NOISE FIGURE: NF = 2.3 dB TYP at f = 1.5 GHz • POWER GAIN:


    Original     		PDF UPC3215TB UPC3215TB-E3 24-Hour nec 2401

    2SC3356

    Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
    Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS

    a1270* transistor

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA892TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA892TD 2SC5668) 2SC5668 P15273EJ1V0DS a1270* transistor

    KTC801U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC801U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. DIM A A1 B 1 6 2 5 3 4 A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.


    Original     		PDF KTC801U KTC801U

    transistor A1

    Abstract: KTA501E
    Text: SEMICONDUCTOR KTA501E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 2 DIM A 5 A1 Excellent temperature response between these 2 transistor. C A super-minimold package houses 2 transistor.


    Original     		PDF KTA501E A-100 transistor A1 KTA501E

    2SC5004

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA804TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)


    Original     		PDF PA804TC 2SC5004) PA804TC PA804TC-T1 2SC5004

    2SC5676

    Abstract: 2SC5737 MARKING VT
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA859TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5676) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA859TD 2SC5737, 2SC5676) S21e2 2SC5737 2SC5676 PA859TD-T3 2SC5676 2SC5737 MARKING VT

    transistor m33

    Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package


    Original     		PDF NE851M33 NE851M33-T3 transistor m33 NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC

    2745T

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS //PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The //PC2745TB and //PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile


    OCR Scan     		PDF uPC2745TB uPC2746TB //PC2745TB //PC2746TB //PC2745T/ //PC2746T //PC2745TB///PC2746TB //PC2745T///PC2746T. 2745T