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    MISSILE GUIDANCE IC Search Results

    MISSILE GUIDANCE IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    MISSILE GUIDANCE IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    missile seeker

    Abstract: seeker missile guidance ic missile guidance Digital Signal Processing Architectures military mcm missile MCP market Charter Power Systems
    Text: E L E C T R O N I C S A PENNWELL PUBLICATION VIEWPOINT COTS and MCMs: an unlikely, yet powerful partnership By Bob Scannell Analog Devices Inc. Multichip Products Group F or some, commercialoff-the-shelf COTS has been a means to faster time-to-market and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: March 2014 CCD Linear Image Sensor CCD Charge Coupled Device TCD1254GFG 2500-elements, embedded electronic shutter function, for barcode scanner. The TCD1254GFG is a high sensitive and low dark current 2500-elements linear image sensor. This device consists of sensitivity CCD chip. The TCD1254GFG has electronic shutter function (ICG).


    Original     		PDF TCD1254GFG 2500-elements, TCD1254GFG 2500-elements

    TCD1103GFG

    Abstract: No abstract text available
    Text: March 2014 CCD Linear Image Sensor CCD Charge Coupled Device TCD1103GFG 1500-elements, embedded electronic shutter function, for barcode scanner. The TCD1103GFG is a high sensitive and low dark current 1500-elements linear image sensor. This device consists of sensitivity CCD chip. The TCD1103GFG has electronic shutter function (ICG).


    Original     		PDF TCD1103GFG 1500-elements, TCD1103GFG 1500-elements

    2SA1954

    Abstract: No abstract text available
    Text: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •


    Original     		PDF 2SA1954 2SA1954

    2SA1587

    Abstract: 2SC4117
    Text: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		PDF 2SC4117 2SA1587 2SA1587 2SC4117

    HN2C01FE

    Abstract: No abstract text available
    Text: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity


    Original     		PDF HN2C01FE 150mA HN2C01FE

    2SC4213

    Abstract: No abstract text available
    Text: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)


    Original     		PDF 2SC4213 2SC4213

    2SA1587

    Abstract: 2SC4117
    Text: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) •


    Original     		PDF 2SA1587 2SC4117 2SA1587 2SC4117

    HN2A01FU

    Abstract: No abstract text available
    Text: HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FU Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm Small package (dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) : hFE = 120~400


    Original     		PDF HN2A01FU -150mA HN2A01FU

    2SC2458

    Abstract: 2sa1048
    Text: 2SC2458 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2458 Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC2458 2SA1048. 2SC2458 2sa1048

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1297 2SC3267. 2SA1297 2SC3267

    2sc4116

    Abstract: 2SA1586
    Text: 2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4116 2SA1586 2sc4116 2SA1586

    HN4A56JU

    Abstract: No abstract text available
    Text: HN4A56JU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A56JU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small Package (Dual Type) z High Voltage and High Current z High hFE z Excellent hFE Linearity : VCEO= −50V, IC = −150mA(MAX.)


    Original     		PDF HN4A56JU -150mA HN4A56JU

    RN1441

    Abstract: RN1442 RN1443 RN1444
    Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting and Switching Applications Unit in mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)


    Original     		PDF RN1441RN1444 RN1441 RN1442 RN1443 RN1444 O-236MOD SC-59 RN1444

    2SA1015

    Abstract: 2SC1815 data 2sa1015
    Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


    Original     		PDF 2SA1015 2SC1815. 2SA1015 2SC1815 data 2sa1015

    2SA1015

    Abstract: 2SC1815 2SA1015 GR 2sc1815 toshiba
    Text: 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications High voltage and high current: • Unit: mm VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.)


    Original     		PDF 2SC1815 2SA1015 2SA1015 2SC1815 2SA1015 GR 2sc1815 toshiba

    2SC3112

    Abstract: No abstract text available
    Text: 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3112 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA (max)


    Original     		PDF 2SC3112 SC-43 2SC3112

    2sa970 equivalent

    Abstract: 2sa970 toshiba transistor 2SA970 2sa970 toshiba
    Text: 2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA970 Low Noise Audio Amplifier Applications • Unit: mm Low noise :NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA,


    Original     		PDF 2SA970 30lled 2sa970 equivalent 2sa970 toshiba transistor 2SA970 2sa970 toshiba

    Untitled

    Abstract: No abstract text available
    Text: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) z High hFE: hFE = 120 to 400


    Original     		PDF HN1A01F

    antilog amplifier

    Abstract: AD9521SE SL1521 AD9521 AD9521JH AD9521KH SL521 direct replacement
    Text: ANALOG D EVIC ES 250MHz Wideband Logarithmic Amplifier AD9521 PIN DESIGNATIONS FEATURES 250MHz Bandwidth M onolithic Construction Low Noise Figure 4.7dB Excellent Detected Output Matching Direct Replacement for SL521/SL1521 O U TPU T GROUN D APPLICATIONS Missile Guidance


    OCR Scan     		PDF 250MHz AD9521 SL521/SL1521 AD9S21 10MHz SL521 antilog amplifier AD9521SE SL1521 AD9521JH AD9521KH direct replacement

    Honeywell m7420a1009-7

    Abstract: pressure sensor array honeywell sensor 405fw504-b Leader Sensors
    Text: HONEYUELL/ S S E C 3ÖE D • M5 5 1 Ô7 2 0G00b7R 5 HH0N3 Honeywell Sensor Description HIGH-PERFORMANCE PIEZORESISTIVE PRESSURE SENSORS PRODUCT PRESSURE RANGE APPLICATION • ST3000 Family .4"H20 to 6Kpsig 4 types 1"H20 to 500psi absolute (2 types) Process control


    OCR Scan     		PDF 0G00b7R ST3000 500psi Honeywell m7420a1009-7 pressure sensor array honeywell sensor 405fw504-b Leader Sensors

    b 1009n

    Abstract: ACTM-1001N ACTM
    Text: Uirmel Diode Detector Modules Wide Frequency Coverage in M icrostrip or Stripline Circuits Tunnel diode detector modules from Advanced Control Components are available to meet both narrowband and broadband requirements from 0.5 to 18 GHz. All feature low video resistance


    OCR Scan     		PDF -1009N b 1009n ACTM-1001N ACTM

    okuma

    Abstract: Radar Warning Receiver
    Text: CORPORATE OVERVIEW MITEQ, an acronym for M icrowave (l)nformation (T ra n s ­ mission (EQ)uipment, designs and manufactures a complete line of high-performance components and subsystem s for the microwave electronics community. Located on Long Island, New York for more than thirty years, it has grown into


    OCR Scan     		PDF

    InfraRed Associates

    Abstract: InfraRed Associates hct-100 HgCdTe Infrared Preamplifiers metal detectors circuits HCT-100 X1010 missile HCT-40 HCT-55
    Text: SPECIFICATIONS FOR STANDARD DETECT! InfraRecJ ASSOCIATES, Inc 70 > 50 1000 Route #130, Cranbury, NJ 08512 609 395-7600 Telex 642282 H H o ni MODEL SIZE (inches) Photoconductive HgCdTe detectors fabricated by Infrared Associates, Inc. and optimized for operation in the 8-13 micron


    OCR Scan     		PDF HCT-90 HCT-80 HCT-70 HCT-60 HCT-55 HCT-50 HCT-40 x1010 15MHz InfraRed Associates InfraRed Associates hct-100 HgCdTe Infrared Preamplifiers metal detectors circuits HCT-100 missile HCT-40 HCT-55