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    MJ13001AL

    Abstract: No abstract text available
    Text: FORW ARD INTERNATIONAL ELECTRONICS LTD, MJ13001AL SEMICONDUCTOR TECHNICAL DATA NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package: 10-126 1 i * Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc Max =lW {Ta=25°C) l ABSOLUTE MAXIMUM RATINGS a t Tamb=25°C


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    MJ13001AL 100uA MJ13001AL PDF

    MJ13001

    Abstract: MJ13001AL mj1300 MJ13001A SS TRANSISTOR VCBo-500V VCEO400V VCEO-400V
    Text: MJ13001AL SEM ICO N DU CTO R FOKWAKD INTERNATIONAL E L E C ntO N K S L ID . " " TECHNICAL DATA NPN IIOPLE DIFFUSED SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package: TO-126 * Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc Max =lW (Ta=25°C)


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    MJ13001AL O-126 100uA 100uA MJ13001 MJ13001AL mj1300 MJ13001A SS TRANSISTOR VCBo-500V VCEO400V VCEO-400V PDF