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Catalog Datasheet	MFG & Type	PDF	Document Tags
PART NUMBER OF PNP 2A DPAK Abstract: No abstract text available Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA	Original	PDF	MJD210 MJD210 500mA QW-R209-019 PART NUMBER OF PNP 2A DPAK
Untitled Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD MJD210 PNP SILICON TRANSISTOR PN P SI LI CON DPAK FOR SU RFACE M OU N T APPLI CAT I ON S 1 ̈ DESCRI PT I ON TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. ̈ FEAT U RE 1 *Collector-Emitter Sustaining Voltage	Original	PDF	MJD210 O-252 MJD210 -10mA -500mA QW-R213-001
MJD210 Abstract: MJD210L-TN3-R Text: UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1 *Collector-Emitter Sustaining Voltage	Original	PDF	MJD210 O-252 MJD210 -10mA -500mA QW-R213-001 MJD210L-TN3-R
MJD210L-TN3-R Abstract: 1N5825 MJD210 MJD210L Text: UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1 *Collector-Emitter Sustaining Voltage	Original	PDF	MJD210 O-252 MJD210 500mA QW-R213-001 MJD210L-TN3-R 1N5825 MJD210L