MJE13003
Abstract: transistor mje13003 NPN Transistor 1.5A 700V MJE13003 transistor
Text: DATA SHEET MJE13003 NPN SILICON POWER TRANSISTOR TO-126 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13003 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS TC=25°C unless otherwise noted SYMBOL Collector-Emitter Voltage
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MJE13003
O-126
100kHz
O-126
transistor mje13003
NPN Transistor 1.5A 700V
MJE13003 transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13003-E
MJE13003-E
MJE13003L-E-x-T6S-K
QW-R223-009
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13003-E
MJE13003-E
MJE13003L-E-x-T6S-K
MJE13003G-E-x-T6S-K
QW-R223-009
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13003-E
MJE13003-E
MJE13003L-E-x-T6S-at
QW-R223-009
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Untitled
Abstract: No abstract text available
Text: MJE13003 w w w. c e n t r a l s e m i . c o m SILICON NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE13003 is a silicon NPN power transistor designed for high speed power switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: TC=25°C unless otherwise noted
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MJE13003
MJE13003
O-126
23-October
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES 2009. 8. 19 Revision No : 10 1/2
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MJE13003
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MJE13003
Abstract: MJE-13003
Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ●FEATURES: MJE13003 •HIGH VOLTAGE CAPABILITY ■HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■COMPACT FLUORESCENT LAMP
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MJE13003
CTO-126/SOT-82
O-126
OT-82
MJE13003
MJE-13003
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MJE13003
Abstract: MJE-13003 equivalent mje13003 MJE130 N-P-N SILICON POWER TRANSISTORS TO-126
Text: Inchange Semiconductor Product Specification MJE13003 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High voltage ,high speed APPLICATIONS ・Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/
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MJE13003
O-126
MJE13003
MJE-13003
equivalent mje13003
MJE130
N-P-N SILICON POWER TRANSISTORS TO-126
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mje13003
Abstract: MJE-13003 mje13002 npn transistors 700V 1A equivalent mje13003 MJE-13002 of mje13003
Text: MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching
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MJE13002
MJE13003
100oC
100oC
O-126
25Adc
25Adc,
mje13003
MJE-13003
npn transistors 700V 1A
equivalent mje13003
MJE-13002
of mje13003
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MJE13003
Abstract: mje13002 MJE-13003 MJE-13002 transistor mje13003 equivalent mje13003
Text: MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching
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MJE13002
MJE13003
100oC
100oC
O-225AA
25Adc
25Adc,
MJE13003
MJE-13003
MJE-13002
transistor mje13003
equivalent mje13003
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mje13003
Abstract: MJE-13003 mje13002
Text: MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching
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MJE13002
MJE13003
100oC
100oC
O-126
25Adc
25Adc,
mje13003
MJE-13003
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mje13003
Abstract: MJE-13003 MJE13003 F equivalent mje13003
Text: SavantIC Semiconductor Product Specification MJE13003 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/
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MJE13003
O-126
mje13003
MJE-13003
MJE13003 F
equivalent mje13003
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit INTERNAL SCHEMATIC DIAGRAM C 2 1 B (3) TO-92 E (1) 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS
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MJE13003
QW-R201-062
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MJE13003
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
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MJE13003
290ns
MJE13003L-x-T60-K
MJE13003G-at
QW-R204-004
MJE13003
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pin diagram mje13003
Abstract: mje13003 equivalent equivalent mje13003 transistor 2N222 2n222 TRANSISTOR 1N4933 1N5820 2N222 2N2905 MJE13003
Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,
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MJE13003
r14525
MJE13003/D
pin diagram mje13003
mje13003 equivalent
equivalent mje13003
transistor 2N222
2n222 TRANSISTOR
1N4933
1N5820
2N222
2N2905
MJE13003
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
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MJE13003
290ns
MJE13003-x-x-T60-K
MJE13003-x-x-T6C-A-K
MJE13003-x-x-T6C-F-K
MJE13003-x-x-T92-B
MJE13003-x-x-at
QW-R204-004
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mje13003
Abstract: UTCMJE13003 transistor mje13003 MJE13003 transistor
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13003
O-126
QW-R204-004
mje13003
UTCMJE13003
transistor mje13003
MJE13003 transistor
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transistor mje13003
Abstract: mje13003 MJE13003 transistor UTCMJE13003 QW-R203-017 equivalent mje13003 transistor Ic 1A datasheet NPN NPN Transistor 1.5A 700V
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13003
O-220
QW-R203-017
transistor mje13003
mje13003
MJE13003 transistor
UTCMJE13003
equivalent mje13003
transistor Ic 1A datasheet NPN
NPN Transistor 1.5A 700V
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mje13003
Abstract: MJE13002 MJE-13003 MJE-13002
Text: MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching
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MJE13002
MJE13003
100oC
100oC
O-126
25Adc
25Adc,
mje13003
MJE-13003
MJE-13002
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mje13003 equivalent
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
mje13003 equivalent
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
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2N2222 transistor output curve
Abstract: UTCMJE13003 MJE13003 transistor
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-220
QW-R203-017
2N2222 transistor output curve
UTCMJE13003
MJE13003 transistor
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transistor 13003G
Abstract: 13003G je13003 JE13003G JE 13003 13003G TRANSISTOR 2n222 TRANSISTOR pin diagram mje13003 equivalent mje13003 je13003 TRANSISTOR
Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,
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MJE13003
MJE13003/D
transistor 13003G
13003G
je13003
JE13003G
JE 13003
13003G TRANSISTOR
2n222 TRANSISTOR
pin diagram mje13003
equivalent mje13003
je13003 TRANSISTOR
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MJE13003
Abstract: MJE13003 transistor WG
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA MJE13003 TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent Switching Times : ton=l.l^S Max. , tf=0.7j/S(Max.), at Ic=lA
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MJE13003
MJE13003
MJE13003 transistor WG
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