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    MJE13009 SWITCHING FREQUENCY Search Results

    MJE13009 SWITCHING FREQUENCY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    MJE13009 SWITCHING FREQUENCY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mje13009-2

    Abstract: Bipolar Junction NPN Transistor 2N2222 Inverter AN-767 MJE13009-D 2N2222 transistor SOA 2N2905 MOTOROLA mje13009 equivalent 2N2222 NPN Transistor features motorola AN719 2N2222 transistor to drive a relay
    Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* Designer's  Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive


    Original     		PDF MJE13009/D* MJE13009/D mje13009-2 Bipolar Junction NPN Transistor 2N2222 Inverter AN-767 MJE13009-D 2N2222 transistor SOA 2N2905 MOTOROLA mje13009 equivalent 2N2222 NPN Transistor features motorola AN719 2N2222 transistor to drive a relay

    1N4933

    Abstract: 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826 2N2905 MOTOROLA mje13009-2
    Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive


    Original     		PDF MJE13009/D* MJE13009/D 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826 2N2905 MOTOROLA mje13009-2

    mje13009-2

    Abstract: mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826
    Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive


    Original     		PDF MJE13009/D* MJE13009/D mje13009-2 mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826

    mje13009l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 QW-R214-011 mje13009l

    mje13009 equivalent

    Abstract: MJE13009g 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 AN719
    Text: MJE13009 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13009 MJE13009 MJE13009/D mje13009 equivalent MJE13009g 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 AN719

    mje13009 equivalent

    Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 MJE13009L QW-R214-011 mje13009 equivalent 2N2222 SOA mje13009l MJE13009L-T3P-T 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data

    mje13009 equivalent

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 O-220F QW-R219-007 mje13009 equivalent

    mje13009 equivalent

    Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


    Original     		PDF MJE13009 MJE13009 MJE13009L QW-R203-024 mje13009 equivalent mje13009L 2N2222 NPN Transistor features MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T

    mje13009 equivalent

    Abstract: MJE13009 MJE13
    Text: MJE13009  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW BASE-DRIVE REQUIREMENTS DESCRIPTION The MJE13009 is a Multiepitaxial Mesa NPN transistor mounted in Jedec TO-220 plastic


    Original     		PDF MJE13009 MJE13009 O-220 O-220 mje13009 equivalent MJE13

    MJE13009L

    Abstract: mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


    Original     		PDF MJE13009 MJE13009 O-220 O-220F QW-R203-024 MJE13009L mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T

    bd139 3v

    Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V


    Original     		PDF MJE13009* MJE13009 SILI32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd139 3v transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad

    MJE13009

    Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such


    Original     		PDF MJE13009 MJE13009 QW-R203-024 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications


    Original     		PDF MJE13009-P MJE13009-P QW-R223-008,

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications


    Original     		PDF MJE13009-K MJE13009-K QW-R223-007

    mje13009 equivalent

    Abstract: MJE13009
    Text: SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S Max. , tf=0.7 S(Max.), at IC=8A


    Original     		PDF MJE13009 mje13009 equivalent MJE13009

    C2026

    Abstract: transistor 400V 8A transistor 400v 8a to220
    Text: UTC MJE13009 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFICATION APPLICAION * Silicon NPN triple diffused MESA type electronic transformers power switching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Tc=25°C, unless otherwise noted


    Original     		PDF MJE13009 O-220 QW-R203-024 C2026 transistor 400V 8A transistor 400v 8a to220

    mje13009 equivalent

    Abstract: 2N2222 transistor output curve 2N2222 transistor to drive a relay on semiconductor AN719
    Text: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13009 MJE13009 AN-222: mje13009 equivalent 2N2222 transistor output curve 2N2222 transistor to drive a relay on semiconductor AN719

    MJE13009

    Abstract: No abstract text available
    Text: MJE13009  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC


    Original     		PDF MJE13009 125oC MJE13009 O-220 O-220

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13009 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFICATION APPLICAION * Silicon NPN triple diffused MESA type electronic transformers power switching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Tc=25°C, unless otherwise noted


    Original     		PDF MJE13009 O-220 QW-R203-024

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13009 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFICATION APPLICAION * Silicon NPN triple diffused MESA type electronic transformers power switching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Tc=25°C, unless otherwise noted


    Original     		PDF MJE13009 O-220 QW-R203-024

    MJE13009

    Abstract: No abstract text available
    Text: MJE13009 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC


    Original     		PDF MJE13009 125oC MJE13009 O-220 O-220

    MJE13009

    Abstract: MJE-13009 mje13009 equivalent
    Text: MJE13009 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC


    Original     		PDF MJE13009 125oC MJE13009 O-220 MJE-13009 mje13009 equivalent

    MJE13009

    Abstract: MJE-13009 MJE130 4SCT
    Text: MJE13009 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC


    Original     		PDF MJE13009 125oC O-220 MJE13009 MJE-13009 MJE130 4SCT

    JE13009

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA M JE13009* D esigner’s Data Sheet ‘ Motorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs The MJE13009 is designed for high-voltage, high-speed power switching inductive


    OCR Scan     		PDF MJE13009/D JE13009* MJE13009 21A-06 O-220AB JE13009