MJE243 TRANSISTOR Search Results

MJE243 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MJE243 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJE243 MOTOROLA Abstract: MJE243 MJE-253 Bipolar Transistor MJE243-D transistor MJE253 equivalent 1N5825 MJE253 MSD6100 Text: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —	Original	PDF	MJE243/D MJE243* MJE253* MJE243, MJE253 MJE243/D* MJE243 MOTOROLA MJE243 MJE-253 Bipolar Transistor MJE243-D transistor MJE253 equivalent 1N5825 MJE253 MSD6100
MJE243G Abstract: to225 PD15120 MJE253 MJE253G MJE243 to-225 pd 242 Text: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE243 MJE253 O-225 MJE243G to225 PD15120 MJE253G to-225 pd 242
mje243 Abstract: mje253 mje253 transistor 200 watts audio amp power transistors Text: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low−current, high−speed switching applications. *ON Semiconductor Preferred Device • High Collector−Emitter Sustaining Voltage —	Original	PDF	MJE243 MJE253 MJE243, MJE253 mje243 mje253 transistor 200 watts audio amp power transistors
MJE243 Abstract: MJE253 MJE243 equivalent transistor MJE243 equivalent mje243 transistor mje253 transistor 1N5825 MSD6100 Text: ON Semiconductort NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —	Original	PDF	MJE243 MJE253 MJE243, r14525 MJE243/D MJE243 MJE253 MJE243 equivalent transistor MJE243 equivalent mje243 transistor mje253 transistor 1N5825 MSD6100
transistor MJE243 equivalent Abstract: mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —	Original	PDF	MJE243, MJE253 MJE243* MJE253* TIP73B TIP74 TIP74A TIP74B transistor MJE243 equivalent mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100
MJE243G Abstract: MJE-253 MJE243 MJE253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor Text: MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE243 MJE253 O-225d MJE243/D MJE243G MJE-253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor
mje253 Abstract: No abstract text available Text: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS	Original	PDF	MJE243 MJE253 MJE243/D
MJE243 Abstract: MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253 MJE253G MSD6100 Text: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS	Original	PDF	MJE243 MJE253 O-225 MJE243/D MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253G MSD6100
mje243 Abstract: No abstract text available Text: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS	Original	PDF	MJE243 MJE253 MJE243/D
Untitled Abstract: No abstract text available Text: MJE243 NPN , MJE253 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • http://onsemi.com 4.0 AMPERES POWER TRANSISTORS	Original	PDF	MJE243 MJE253 MJE243/D
mje243 transistor Abstract: MJE253 MJE243 equivalent MJE243 Text: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —	Original	PDF	MJE243 MJE253 MJE243, r14525 MJE243/D mje243 transistor MJE253 MJE243 equivalent MJE243
MJE243 equivalent Abstract: MJE243 MJE253 to126 pin out Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications	Original	PDF	MJE243 O-126 MJE253 C-120 MJE243Rev050102 MJE243 equivalent MJE243 MJE253 to126 pin out
MJE243 Abstract: transistor MJE243 equivalent to126 pin out MJE253 mje243 transistor Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications	Original	PDF	MJE243 O-126 MJE253 150tems. C-120 MJE243Rev050102 MJE243 transistor MJE243 equivalent to126 pin out MJE253 mje243 transistor
MJE243 Abstract: MJE253 to126 pin out Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications	Original	PDF	ISO/TS16949 MJE243 O-126 MJE253 C-120 MJE243Rev050102 MJE243 MJE253 to126 pin out

Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications	Original	PDF	MJE243 O-126 MJE253 C-120 MJE243Rev050102
Untitled Abstract: No abstract text available Text: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE243G MJE253Gâ MJE243/D
Untitled Abstract: No abstract text available Text: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE243G MJE253Gâ MJE243/D
JE253 Abstract: JE243 JE233 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors MJE243* . . . designed for low power audio amplifier and low-current, high-speed switching applications. MJE253* NPN PNP • High Collector-Emitter Sustaining Voltage —	OCR Scan	PDF	MJE243, MJE253 JE253 JE243 JE233
JE243 Abstract: JE253 je 243 Transistor 834 Text: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors M JE 243* . . . designed for low power audio amplifier and low -current, high-speed switching applications. M JE 253* • • • • •	OCR Scan	PDF	MJE243/D MJE243, MJE253 O-225AA JE243 JE253 je 243 Transistor 834
je240 Abstract: MJE241 MJE263 mje240 JE250 MJE244 mje260 mje250 mje252 mjE26 Text: MOT OR CL A SC ÎEE D I b3b?254 QGÖS315 b \| X S T RS /R F NPN MOTOROLA SEMICONDUCTOR T -3Î-07 T-33-17 TECHNICAL DATA M1E240, MJE241 MJE243, MJE244 PNP MJE250 thru MIE254 COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON	OCR Scan	PDF	T-33-17 M1E240, MJE241 MJE243, MJE244 MJE250 MIE254 MJE240, MJE243/4, MJE253/4 je240 MJE263 mje240 JE250 MJE244 mje260 mje252 mjE26
MJE240 Abstract: MJE243 MJE250 MJE244 MJE251 MJE241 MJE242 MJE252 MJE253 MJE254 Text: Datasheet Central MJE240 THRU MJE244 NPN MJE250 THRU MJE254 PNP Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO— 126 GASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	PDF	MJE240 MJE244 MJE250 MJE254 O-126 MJE240, 200mA 500mA MJE243 MJE251 MJE241 MJE242 MJE252 MJE253
2N6410 Abstract: MJE251 MJE170 motorola 2N6412 2N6415 MJE250 MJE241 parameters S transistor NPN motorola MJE171 MJE222 Text: MOTORÔLA~SC iDIODES/OPTOJ 34 6 3 6 7 2 5 5 M O T O R O L A SC DE \| t 3 b ? S S S O D B T T m {D I O D E S / O P T O 34C 4 37964 SILICON POWER TRANSISTOR DICE continued) MJEC244 DIE NO. — NPN LINE SOURCE — PL500.E22 PNP NPN ÉSkâSk Complimentary transistors	OCR Scan	PDF	PL500 MJEC244 MJEC254 2N6412 2N6413 MDS26 MDS27 MJE180 MJE181 2N6410 MJE251 MJE170 motorola 2N6415 MJE250 MJE241 parameters S transistor NPN motorola MJE171 MJE222
BD786 Abstract: B0680 b0775 BD436 MOTOROLA 2N5190 MOTOROLA 2N5192 BD441 B0785 3N6034 B0677 BD185 Text: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-126 Package (continued) R esistive Sw itching lcCont ^ C E O (sua) Amps Max Volts Min 4 NPN PNP ^FE M in/M ax @ lc Arrip ts t( US @ lc fr MHZ PD (Case) US Max Max Amp Min @ 25°C Watts 20 BD433 BD434 50 min	OCR Scan	PDF	O-126 BD433 BD434 BD185 BD186 BD435 BD436 2N5190 2N5193 2N6037 BD786 B0680 b0775 BD436 MOTOROLA 2N5190 MOTOROLA 2N5192 BD441 B0785 3N6034 B0677
MJE241 Abstract: Power Transistors TO-126 Case MJe340 350 MJE222 mje520 Text: Power Transistors TO-126 Case Continued Top View TYPE NO. •c (A) PD (W) MAX bvcbo BVCEO hi E @ lc (V) 00 mm MIN MIN MAX (BA) Bottom View VCE(SAT) 1C (V) (A) fT (MHz) NPN PUP MJE180 MJE170 3.0 15 60 40 50 250 100 0.3 0.5 50 MJE181 MJE171 3.0 15 80	OCR Scan	PDF	O-126 MJE370 MJE371 MJE710 MJE711 MJE712 MJE700 MJE701 MJE702 MJE241 Power Transistors TO-126 Case MJe340 350 MJE222 mje520

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MJE243 TRANSISTOR Search Results

MJE243 TRANSISTOR Result Highlights (5)

MJE243 TRANSISTOR Datasheets Context Search

MJE243 MOTOROLA

MJE243G

mje243

MJE243

transistor MJE243 equivalent

MJE243G

mje253

MJE243

mje243

Untitled

mje243 transistor

MJE243 equivalent

MJE243

MJE243

Untitled

Untitled

Untitled

JE253

JE243

je240

MJE240

2N6410

BD786

MJE241