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    MMBD352WT1 Search Results

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    MMBD352WT1 Price and Stock

    onsemi MMBD352WT1G

    RF DIODE SCHOTTKY 7V 200MW SC70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD352WT1G Digi-Reel 81,303 1
    • 1 $0.29
    • 10 $0.18
    • 100 $0.1124
    • 1000 $0.07373
    • 10000 $0.07373
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    MMBD352WT1G Cut Tape 81,303 1
    • 1 $0.29
    • 10 $0.18
    • 100 $0.1124
    • 1000 $0.07373
    • 10000 $0.07373
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    MMBD352WT1G Reel 78,000 3,000
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    • 10000 $0.06191
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    Avnet Americas MMBD352WT1G Reel 10 Weeks 18,000
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    Mouser Electronics MMBD352WT1G 6,832
    • 1 $0.24
    • 10 $0.149
    • 100 $0.084
    • 1000 $0.071
    • 10000 $0.047
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    Arrow Electronics MMBD352WT1G 1 1
    • 1 $0.039
    • 10 $0.0238
    • 100 $0.0238
    • 1000 $0.0238
    • 10000 $0.0238
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    Newark MMBD352WT1G Cut Tape 19,250 5
    • 1 $0.309
    • 10 $0.194
    • 100 $0.124
    • 1000 $0.083
    • 10000 $0.083
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    MMBD352WT1G Reel 6,000
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    • 10000 $0.061
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    Onlinecomponents.com MMBD352WT1G
    • 1 -
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    • 10000 $0.0382
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    Bristol Electronics MMBD352WT1G 660 27
    • 1 -
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    • 100 $0.0938
    • 1000 $0.0562
    • 10000 $0.0562
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    Quest Components MMBD352WT1G 557
    • 1 $0.11
    • 10 $0.11
    • 100 $0.0825
    • 1000 $0.0688
    • 10000 $0.0688
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    MMBD352WT1G 528
    • 1 $0.25
    • 10 $0.25
    • 100 $0.075
    • 1000 $0.075
    • 10000 $0.075
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    Avnet Silica MMBD352WT1G 11 Weeks 3,000
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    EBV Elektronik MMBD352WT1G 12 Weeks 3,000
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    onsemi NSVMMBD352WT1G

    DIODE ARRAY SCHOTTKY 7V SOT323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NSVMMBD352WT1G Cut Tape 2,730 1
    • 1 $0.48
    • 10 $0.297
    • 100 $0.1883
    • 1000 $0.12715
    • 10000 $0.12715
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    NSVMMBD352WT1G Digi-Reel 2,730 1
    • 1 $0.48
    • 10 $0.297
    • 100 $0.1883
    • 1000 $0.12715
    • 10000 $0.12715
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    NSVMMBD352WT1G Reel 3,000
    • 1 -
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    • 10000 $0.09684
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    Avnet Americas NSVMMBD352WT1G Reel 8 Weeks 9,000
    • 1 -
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    • 1000 -
    • 10000 $0.12028
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    Mouser Electronics NSVMMBD352WT1G 2,403
    • 1 $0.47
    • 10 $0.247
    • 100 $0.142
    • 1000 $0.126
    • 10000 $0.088
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    Newark NSVMMBD352WT1G Reel 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.098
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    Avnet Silica NSVMMBD352WT1G 9 Weeks 3,000
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    EBV Elektronik NSVMMBD352WT1G 10 Weeks 3,000
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    onsemi MMBD352WT1

    DIODE SCHOTTKY DUAL 7V SOT-323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD352WT1 Reel
    • 1 -
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    • 10000 -
    		Buy Now
    Quest Components MMBD352WT1 1,760
    • 1 $0.3
    • 10 $0.3
    • 100 $0.135
    • 1000 $0.09
    • 10000 $0.09
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    Rochester Electronics MMBD352WT1 1,998 1
    • 1 $0.09
    • 10 $0.09
    • 100 $0.0846
    • 1000 $0.0765
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    MMBD352WT1 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBD352WT1 Leshan Radio Company Dual Schottky Barrier Diode Original PDF
    MMBD352WT1 Motorola Silicon Diode Original PDF
    MMBD352WT1 On Semiconductor MMBD352 - DIODE SILICON, UHF BAND, MIXER DIODE, CASE 419-04, SC-70, 3 PIN, Microwave Mixer Diode Original PDF
    MMBD352WT1 On Semiconductor Dual Schottky Barrier Diode Original PDF
    MMBD352WT1 On Semiconductor Dual Schottky Barrier Diode Original PDF
    MMBD352WT1-D On Semiconductor Dual Schottky Barrier Diode Original PDF
    MMBD352WT1G On Semiconductor MMBD352 - DIODE SILICON, UHF BAND, MIXER DIODE, LEAD FREE, CASE 419-04, SC-70, 3 PIN, Microwave Mixer Diode Original PDF
    MMBD352WT1G On Semiconductor Small Signal SC70 Schottky, Dual Series Original PDF

    MMBD352WT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Schottky Barrier Diode MMBD352WT1 3 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352WT1 MMBD352WT1

    MMBD352WT1

    Abstract: SMD310
    Text: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352WT1 r14525 MMBD352WT1/D MMBD352WT1 SMD310

    MMBD352WT1

    Abstract: No abstract text available
    Text: ON Semiconductort Dual SCHOTTKY Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352WT1 r14525 MMBD352WT1/D MMBD352WT1

    MMBD352WT1G

    Abstract: No abstract text available
    Text: MMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. Features http://onsemi.com • Very Low Capacitance - Less Than 1.0 pF @ 0 V


    Original     		PDF MMBD352WT1G OT-323 SC-70) MMBD352WT1/D MMBD352WT1G

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352WT1 MMBD352WT1/D

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352WT1 MMBD352WT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    Untitled

    Abstract: No abstract text available
    Text: MMBD352WT1G, MMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. http://onsemi.com Features •     Very Low Capacitance − Less Than 1.0 pF @ 0 V


    Original     		PDF MMBD352WT1G, NSVMMBD352WT1G MMBD352WT1/D

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352WT1

    PPAP MANUAL

    Abstract: NSVMMBD352 NSVMMBD352WT1G
    Text: MMBD352WT1G, MMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. http://onsemi.com Features •     Very Low Capacitance − Less Than 1.0 pF @ 0 V


    Original     		PDF MMBD352WT1G, NSVMMBD352WT1G OT-323 SC-70) MMBD352WT1/D PPAP MANUAL NSVMMBD352

    MMBD352WT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBD352WT1/D SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.


    Original     		PDF MMBD352WT1/D MMBD352WT1 MMBD352WT1

    onsemi 035 diode

    Abstract: MMBD352WT1 MMBD352WT1G
    Text: MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features http://onsemi.com • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352WT1 MMBD352WT1/D onsemi 035 diode MMBD352WT1 MMBD352WT1G

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original     		PDF SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


    Original     		PDF 1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1

    low noise transistors bc638

    Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
    Text: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22


    Original     		PDF MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 low noise transistors bc638 BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original     		PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original     		PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    delta rectifier all model

    Abstract: BAT54LT1 Wafer MSL LMCFD353WP BAS40-04LT1 BAS40-06LT1 BAS70LT1 zener wafer on semiconductor zener
    Text: FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 24-JUNE-2003 SUBJECT: ON Semiconductor Final Product/Process Change Notification 12287 TITLE: Final Notification for Small Signal Schottky Process Consolidation in Zener Rectifier Wafer Fab EFFECTIVE DATE: 24-Aug-2003


    Original     		PDF 24-JUNE-2003 24-Aug-2003 S20636 RPDR20 BAS40-04LT1 BAS40-06LT1 BAS40LT1 BAS70-04LT1 BAS70LT1 BAT54ALT1 delta rectifier all model BAT54LT1 Wafer MSL LMCFD353WP BAS40-04LT1 BAS40-06LT1 BAS70LT1 zener wafer on semiconductor zener

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky B arrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    OCR Scan     		PDF b3b72SS BD352W

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ual Sch o ttk y Barrier Diode MMBD352W T1 These devices are designed primarily for U H F mixer applications but are suitable also for use in detector and ultra-fast switching circuits. • Very Low Capacitance — L ess Than 1.0 pF @ Zero Volts


    OCR Scan     		PDF MMBD352W MMBD352WT1 OT-323 MMBD352WT1