MMBT5551L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G ORDERING INFORMATION Normal MMBT5551-x-AE3-R
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Original
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MMBT5551
MMBT5551L
MMBT5551G
MMBT5551-x-AE3-R
MMBT5551L-x-AE3-R
MMBT5551G-x-AE3-R
OT-23
QW-R206-010
MMBT5551L
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PDF
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MMBT5551-7-F
Abstract: MMBT5551-7 J-STD-020A MMBT5401 MMBT5551
Text: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT5551 Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version
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Original
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MMBT5551
MMBT5401)
OT-23,
J-STD-020A
MIL-STD-202,
DS30061
MMBT5551-7-F
MMBT5551-7
J-STD-020A
MMBT5401
MMBT5551
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE MODEL: MMBT5551 MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version
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Original
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MMBT5551
OT-23
MMBT5401)
OT-23,
J-STD-020A
MIL-STD-202,
DS30061
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PDF
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MMBT5550
Abstract: MMBT5551 MMBT5401
Text: MMBT5551 MMBT5551 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2007-11-09 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1
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Original
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MMBT5551
OT-23
O-236)
UL94V-0
MMBT5401
MMBT5550
MMBT5551
MMBT5401
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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Original
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MMBT5551
MMBT5551
MMBT5551L-x-AE3-R
MMBT5551G-x-AE3-R
OT-23
QW-R206-010.
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PDF
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MMBT5551
Abstract: MMBT5551L
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G ORDERING INFORMATION Normal MMBT5551-x-AE3-R
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Original
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MMBT5551
MMBT5551L
MMBT5551G
MMBT5551-x-AE3-R
MMBT5551L-x-AE3-R
MMBT5551G-x-AE3-R
OT-23
QW-R206-010
MMBT5551
MMBT5551L
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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Original
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MMBT5551
MMBT5551
OT-23
O-236)
MMBT5551G-x-AE3-R
QW-R206-010.
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT5551 SPICE MODEL: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A · · · · · · Min Max A
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Original
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MMBT5551
OT-23
MMBT5401)
OT-23,
J-STD-020A
MIL-STD-202,
DS30061
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PDF
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BF242
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C C B E TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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Original
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2N5551
MMBT5551
2N5551
OT-23
OT-23
BF242
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PDF
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2N5551B
Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
2N5551YIUBU
2N5551YTA
2N5551TA
2N5551CBU
2N5551IUTA
2N5551B
2n5551yc
sot-23 marking NE
2N5551BU
2N5551Y
5551n
transistor marking code ne SOT-23
2n5551c-y
2N5551YBU
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PDF
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MMBT5551A
Abstract: No abstract text available
Text: SPICE MODEL: MMBT5551 MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 SOT-23 A Ideal for Medium Power Amplification and Switching C Lead Free/RoHS Compliant (Note 2)
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Original
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MMBT5551
MMBT5401)
OT-23
J-STD-020C
MIL-STD-202,
DS30061
MMBT5551A
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PDF
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2n5551
Abstract: 2N5551 SOT23 MMBT5551
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
2N5551 SOT23
MMBT5551
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE MODEL: MMBT5551 MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching · · · · · · Min Max A 0.37 0.51
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Original
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MMBT5551
OT-23
MMBT5401)
OT-23,
J-STD-020A
MIL-STD-202,
Weightheets/ap02001
DS30061
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT5551 SPICE MODEL: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching · · · · · · Dim Min Max A 0.37
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Original
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MMBT5551
OT-23
MMBT5401)
OT-23,
J-STD-020A
MIL-STD-202,
Weightheets/ap02001
DS30061
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PDF
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2N5551
Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
BF242
CBVK741B019
F63TNR
MMBT5551
PN2222N
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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Original
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2N5551
MMBT5551
2N5551
OT-23
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PDF
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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Original
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2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
transistor 2n5551
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PDF
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2n5551
Abstract: 2N5551 SOT23
Text: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1
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Original
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2N5551
MMBT5551
2N5551
OT-23
2N5551TA
2N5551TFR
2N5551TF
2N5551BU
2N5551 SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT5550 / MMBT5551 MMBT5550 / MMBT5551 Surface Mount General Purpose Si-Epitaxial Planar Transistors Vielzweck Si-Epitaxial-Planar-Transistoren für die Oberflächenmontage NPN NPN Version 2006-05-09 1.1 2.9 ±0.1 0.4 Type Code 1 1.3±0.1 2.5 max 3 2 1.9
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Original
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MMBT5550
MMBT5551
OT-23
O-236)
UL94V-0
MMBT5550
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE MODEL: MMBT5551 MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 SOT-23 A Ideal for Medium Power Amplification and Switching C Available in Lead Free/RoHS Compliant Version (Note 2)
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Original
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MMBT5551
MMBT5401)
OT-23
J-STD-020C
MIL-STD-202,
DS30061
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PDF
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
2N5551 SOT-23
BF242
CJE SOT-23
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PDF
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TRANSISTOR SMD MARKING g1
Abstract: g1 smd transistor TRANSISTOR SMD catalog smd transistor g1 MMBT5551 catalog transistors smd transistors list NF marking TRANSISTOR SMD smd transistor 079 SMD TRANSISTOR MARKING 079
Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT5551 product family SOT-23 Plastic-Encapsulate Biploar Transistors
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Original
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MMBT5551
OT-23
600mA
300mW
80MHz
TRANSISTOR SMD MARKING g1
g1 smd transistor
TRANSISTOR SMD catalog
smd transistor g1
MMBT5551
catalog transistors
smd transistors list
NF marking TRANSISTOR SMD
smd transistor 079
SMD TRANSISTOR MARKING 079
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PDF
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MMBT5551
Abstract: MMBT5551L marking G1 sot23 UTC
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 3 * High Collector-Emitter Voltage: VCEO=160V * High current gain 1 2 SOT-23 *Pb-free plating product number:MMBT5551L ORDERING INFORMATION
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Original
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MMBT5551
OT-23
MMBT5551L
MMBT5551-x-AE3-6-R
MMBT5551L-x-AE3-6-R
QW-R206-010
MMBT5551
MMBT5551L
marking G1 sot23 UTC
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PDF
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LC 300-S
Abstract: MMBT5401 MMBT5551
Text: ÍRANSYS ELECTRONICS LIMITED MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available MMBT5551 Ideal for Medium Power Amplification and Switching -H M [cl TOP VIEW Mechanical Data_
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OCR Scan
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MMBT5401
MMBT5551)
OT-23,
MIL-STD-202,
OT-23
MMBT5401
-10mA,
-50mA,
LC 300-S
MMBT5551
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PDF
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