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    MMBT901 Price and Stock

    onsemi MMBT9013

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics MMBT9013 31,300
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    • 1000 $0.085
    • 10000 $0.057
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    Others MMBT9013H

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics MMBT9013H 15,000
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    • 1000 -
    • 10000 $0.0101
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    onsemi MMBT9013LT1G

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics MMBT9013LT1G 5,600
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    • 1000 $0.082
    • 10000 $0.055
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    MMBT901 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT9012 Unisonic Technologies 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Original PDF
    MMBT9013 Unisonic Technologies 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Original PDF
    MMBT9014 Unisonic Technologies PRE-AMPLIFIER, LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    MMBT9015 Unisonic Technologies PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    MMBT9018 Sinyork Mini size of Discrete semiconductor elements Original PDF
    MMBT9018 Unisonic Technologies AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER NPN EPITAXIAL PLANAR TRANSISTOR Original PDF
    MMBT9018LT1 Shenzhen Yongerjia Electronic NPN Epitaxial Silicon Transistor Original PDF

    MMBT901 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UTC 225

    Abstract: MMBT9015G MMBT9014
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 „ ORDERING INFORMATION Ordering Number Lead Free


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    MMBT9015 450mW) MMBT9014 MMBT9015L-x-AE3-R MMBT9015G-x-AE3-R OT-23 QW-R206-023 UTC 225 MMBT9015G MMBT9014 PDF

    mmbt9013

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012


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    MMBT9013 625mW) 500mA) MMBT9012 MMBT9013-x-AE3-R MMBT9013L-x-AE3-R MMBT9013G-x-AE3-R OT-23 QW-R206-021 mmbt9013 PDF

    MMBT9013

    Abstract: MMBT9012
    Text: MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage


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    MMBT9013 MMBT9012 OT-23 MMBT9013 PDF

    MMBT9018

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9018 AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER NPN SILICON TRANSISTOR 3 1 2 „ * High Current Gain Bandwidth Product fT=1.1GHz Typ 3 2 „ SOT-23 FEATURES 1 SOT-523 ORDERING INFORMATION Ordering Number Pin Assignment


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    MMBT9018 OT-23 OT-523 MMBT9018-x-AE3-R MMBT9018L-x-AE3-R MMBT9018G-x-AE3-R MMBT9018-x-AN3-R MMBT9018L-x-AN3-R MMBT9018G-x-AN3-R MMBT9018 PDF

    MMBT9012

    Abstract: No abstract text available
    Text: MMBT9012 PNP Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the NPN transistors MMBT9013 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER


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    MMBT9012 MMBT9013 OT-23 MMBT9012 PDF

    MMBT9012H

    Abstract: MMBT9012G MMBT9013G MMBT9013H
    Text: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol


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    MMBT9012G MMBT9012H MMBT9013G MMBT9013H OT-23 500mA, 50MHz MMBT9012H PDF

    mmbt9015

    Abstract: MMBT9014B MMBT9014C MMBT9014D
    Text: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


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    MMBT9014BLT1 MMBT9014CLT1 MMBT9014DLT1 MMBT9015BLT1, MMBT9015CLT1 MMBT9015DLT1 OT-23 100mA mmbt9015 MMBT9014B MMBT9014C MMBT9014D PDF

    MMBT9014B

    Abstract: MMBT9014C MMBT9014D
    Text: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


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    MMBT9014BLT1 MMBT9014CLT1 MMBT9014DLT1 MMBT9015BLT1, MMBT9015CLT1 MMBT9015DLT1 OT-23 100mA MMBT9014B MMBT9014C MMBT9014D PDF

    9013G

    Abstract: 9012 transistor sot-23 9012 pnp MMBT9012LT1
    Text: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW


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    MMBT9012LT1 OT-23 9013G -500mA 225mW 9013G 9012 transistor sot-23 9012 pnp MMBT9012LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9015 2 1 MARKING 3 14 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )


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    MMBT9014 450mW) MMBT9015 OT-23 100mA, QW-R206-022 PDF

    MMBT9015DLT1

    Abstract: MMBT*9015c MMBT9015B MMBT9015C MMBT9014C
    Text: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


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    MMBT9015BLT1 MMBT9015CLT1 MMBT9015DLT1 MMBT9014BLT1, MMBT9014CLT1 MMBT9014DLT1 OT-23 100mA, MMBT9015DLT1 MMBT*9015c MMBT9015B MMBT9015C MMBT9014C PDF

    fm tuner ic

    Abstract: Sat Tuner Tuner sat MMBT9018G MMBT9018H NPN Silicon Epitaxial Planar Transistor
    Text: MMBT9018G / MMBT9018H NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage


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    MMBT9018G MMBT9018H OT-23 MMBT9018G fm tuner ic Sat Tuner Tuner sat MMBT9018H NPN Silicon Epitaxial Planar Transistor PDF

    MMBT9018G

    Abstract: MMBT9018H
    Text: MMBT9018GLT1 / MMBT9018HLT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO


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    MMBT9018GLT1 MMBT9018HLT1 OT-23 MMBT9018G MMBT9018H PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 *Pb-free plating product number: MMBT9014L „


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    MMBT9014 450mW) MMBT9015 MMBT9014L MMBT9014-x-AE3-R MMBT9014L-x-AE3-R OT-23 QW-R206-022 PDF

    MMBT9014

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ ORDERING INFORMATION Ordering Number Lead Free


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    MMBT9014 450mW) MMBT9015 MMBT9014G-x-AE3-R OT-23 QW-R206-022 MMBT9014 PDF

    MMBT*9015c

    Abstract: MMBT9015C MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015
    Text: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


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    MMBT9015B MMBT9015C MMBT9015D MMBT9014B, MMBT9014C MMBT9014D OT-23 100mA, MMBT*9015c MMBT9014B MMBT9015 PDF

    MMBT9018G

    Abstract: MMBT9018H
    Text: MMBT9018GLT1 / MMBT9018HLT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO


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    MMBT9018GLT1 MMBT9018HLT1 OT-23 MMBT9018G MMBT9018H PDF

    MMBT9013G

    Abstract: MMBT9013H MMBT9012G MMBT9012H
    Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol


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    MMBT9013G MMBT9013H MMBT9012G MMBT9012H OT-23 MMBT9013 500mA, 50MHz MMBT9013H PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT9018 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description SC-59 A L The MMBT9018 is designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner.


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    MMBT9018 SC-59 MMBT9018 01-Jun-2002 PDF

    MMBT9015LT1

    Abstract: No abstract text available
    Text: MMBT9015LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to MMPT9014LT1 Collector-current:Ic=-100mA Collector-Emiller Voltage:V CE =-45V 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS


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    MMBT9015LT1 OT-23 MMPT9014LT1 -100mA MMBT9015LT1 PDF

    MMBT9013

    Abstract: No abstract text available
    Text: MMBT9013 NPN Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the PNP transistors MMBT9012 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER


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    MMBT9013 MMBT9012 OT-23 MMBT9013 PDF

    MMBT9014

    Abstract: No abstract text available
    Text: MMBT9014 NPN Silicon Epitaxial Planar Transistors For switching and AF amplifier applications As complementary types the PNP transistors MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER


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    MMBT9014 MMBT9015 OT-23 MMBT9014B MMBT9014C MMBT9014D MMBT9014 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  3 FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION


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    MMBT9014 450mW) MMBT9015 OT-23 O-236) MMBT9014G-x-AE3-R QW-R206-022 PDF

    MMBT9013

    Abstract: MMBT9012 MMBT9013L
    Text: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1


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    MMBT9013 625mW) 500mA) MMBT9012 OT-23 MMBT9013L QW-R206-021 MMBT9013 MMBT9012 MMBT9013L PDF