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    MMBTA13LT1 Price and Stock

    onsemi MMBTA13LT1G

    TRANS NPN DARL 30V 0.3A SOT23-3
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    DigiKey MMBTA13LT1G Cut Tape 53,153 1
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    onsemi SMMBTA13LT1G

    TRANS NPN DARL 30V 0.3A SOT23-3
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    DigiKey SMMBTA13LT1G Cut Tape 20,609 1
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    onsemi MMBTA13LT1

    TRANS NPN DARL 30V 0.3A SOT23
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    Rochester Electronics LLC SMMBTA13LT1

    TRANS NPN DARL 30V 0.3A SOT23-3
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    onsemi MMBTA13LT3G

    Darlington Transistors SS DL XSTR NPN 30V
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    Mouser Electronics MMBTA13LT3G 16,388
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    MMBTA13LT1 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBTA13LT1 Leshan Radio Company Darlington Amplifier Transistors(NPN Silicon) Original PDF
    MMBTA13LT1 Motorola Silicon NPN-darlington transistor Original PDF
    MMBTA13LT1 On Semiconductor Darlington Amplifier Transistors Original PDF
    MMBTA13LT1 On Semiconductor Darlington Amplifier Transistor NPN Original PDF
    MMBTA13LT1 On Semiconductor Small Signal Darlington NPN Original PDF
    MMBTA13LT1-D On Semiconductor Darlington Amplifier Transistors NPN Silicon Original PDF
    MMBTA13LT1G On Semiconductor Darlington Amplifier Transistors Original PDF

    MMBTA13LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMMBTA13LT1G

    Abstract: SMMBTA14LT1G
    Text: MMBTA13LT1G, MMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318


    Original
    PDF MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G AEC-Q101 OT-23 O-236) SMMBTA13LT1G MMBTA13LT1/D

    Untitled

    Abstract: No abstract text available
    Text: Darlington Amplifier Transistors NPN Silicon MMBTA13LT1 MMBTA14LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 10 Vdc


    Original
    PDF MMBTA13LT1 MMBTA14LT1 236AB)

    MMBTA13

    Abstract: MMBTA13LT1 MMBTA14 MMBTA14LT1
    Text: ON Semiconductort MMBTA13LT1 MMBTA14LT1 Darlington Amplifier Transistors MMBTA14LT1 is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage


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    PDF MMBTA13LT1 MMBTA14LT1 MMBTA14LT1 236AB) r14525 MMBTA13LT1/D MMBTA13 MMBTA13LT1 MMBTA14

    MMBTA13

    Abstract: MMBTA13LT1 MMBTA13LT1G MMBTA14 MMBTA14LT1 MMBTA14LT1G
    Text: MMBTA13LT1G, MMBTA14LT1G Darlington Amplifier Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant BASE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage


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    PDF MMBTA13LT1G, MMBTA14LT1G MMBTA13LT1/D MMBTA13 MMBTA13LT1 MMBTA13LT1G MMBTA14 MMBTA14LT1 MMBTA14LT1G

    transistor D 2395

    Abstract: Motorola 2396
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 1 3 1 EMITTER 2 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit


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    PDF MMBTA13LT1 MMBTA14LT1* 236AB) transistor D 2395 Motorola 2396

    MMBTA13

    Abstract: MMBTA13LT1 MMBTA14 MMBTA14LT1
    Text: MOTOROLA Order this document by MMBTA13LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage


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    PDF MMBTA13LT1/D MMBTA13LT1 MMBTA14LT1* MMBTA13LT1/D* MMBTA13 MMBTA13LT1 MMBTA14 MMBTA14LT1

    MMBTA13LT1G

    Abstract: No abstract text available
    Text: MMBTA13LT1G, MMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318


    Original
    PDF MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G MMBTA13LT1/D MMBTA13LT1G

    marking pk sot23

    Abstract: 50K MARKING SOT23
    Text: ON Semiconductort MMBTA13LT1 MMBTA14LT1 Darlington Amplifier Transistors MMBTA14LT1 is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage


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    PDF MMBTA13LT1 MMBTA14LT1 MMBTA14LT1 marking pk sot23 50K MARKING SOT23

    Untitled

    Abstract: No abstract text available
    Text: Darlington Amplifier Transistors NPN Silicon MMBTA13LT1 MMBTA14LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 10 Vdc


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    PDF MMBTA13LT1 MMBTA14LT1 236AB)

    MMBTA13LT1

    Abstract: No abstract text available
    Text: MMBTA13LT1 NPN Silicon Epitaxial Planar Transistor Darlington Transistor for applications requiring extremely high current gain at collector currents to 1.0 A. SOT-23 Plastic Package Absolute Maximum Ratings* Ta = 25 oC Symbol Value Unit Collector Emitter Voltage


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    PDF MMBTA13LT1 OT-23 100mA, 100MHz Width300ms, MMBTA13LT1

    MMBTA13LT1

    Abstract: transistor x1
    Text: MMBTA13LT1 NPN Silicon Epitaxial Planar Transistor Darlington Transistor for applications requiring extremely high current gain at collector currents to 1.0 A. SOT-23 Plastic Package Absolute Maximum Ratings* Ta = 25 oC Symbol Value Unit Collector Emitter Voltage


    Original
    PDF MMBTA13LT1 OT-23 100mA, 100MHz Width300ms, MMBTA13LT1 transistor x1

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MMBTA13LT1 MMBTA14LT1 Darlington Amplifier Transistors MMBTA14LT1 is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage


    Original
    PDF MMBTA13LT1 MMBTA14LT1 MMBTA14LT1 236AB)

    MMBTA13

    Abstract: MMBTA13LT1 MMBTA14 MMBTA14LT1
    Text: ON Semiconductort MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors *ON Semiconductor Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage


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    PDF MMBTA13LT1 MMBTA14LT1* 236AB) r14525 MMBTA13LT1/D MMBTA13 MMBTA13LT1 MMBTA14 MMBTA14LT1

    Transistor A14

    Abstract: a14 Transistor MMBTA13LT1 MMBTA14LT1 a13 marking transistor
    Text: MMBTA13LT1/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage


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    PDF MMBTA13LT1/14LT1 100mA 100MHz 40x40x1 300us MMBTA13LT1 MMBTA14LT1 Transistor A14 a14 Transistor a13 marking transistor

    MMBTA13

    Abstract: MMBTA13LT1 MMBTA14 MMBTA14LT1 5m265 50K10K
    Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors NPN Silicon MMBTA13LT1 MMBTA14LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage


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    PDF MMBTA13LT1 MMBTA14LT1 236AB) MMBTA13 MMBTA13LT1 MMBTA14 MMBTA14LT1 5m265 50K10K

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBTA13LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.3 A * Collector-base voltage V(BR)CBO: 30 V * Operating and storage junction temperature range


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    PDF MMBTA13LT1 OT-23 -55OCto 150OC OT-23 MIL-STD-202E

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


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    PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


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    PDF SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    transistor D 2395

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 M M BTA14LT1* Darlington A m plifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol


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    PDF MMBTA13LT1 BTA14LT1* OT-23 O-236AB) b3b7255 MMBTA13LT1 MMBTA14LT1 wmb3b72SS transistor D 2395