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    MMBV3700 Search Results

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    MMBV3700 Price and Stock

    onsemi MMBV3700LT1

    DIODE TUNING SS 200V SOT23
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    IBS Electronics MMBV3700LT1 95,893 16,560
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    onsemi MMBV3700LT1G

    RF DIODE PIN 200V 200MW SOT23-3
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    MMBV3700 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBV3700L Motorola PIN, Switch, Single, 200V, VHF, SOT-23, 3-Pin Original PDF
    MMBV3700L On Semiconductor High Voltage Silicon Pin Diodes Original PDF
    MMBV3700LT1 Leshan Radio Company Silicon Pin Diode Original PDF
    MMBV3700LT1 On Semiconductor DIODE PIN SWITCH 200V 3SOT-23 Original PDF
    MMBV3700LT1 On Semiconductor High Voltage Silicon Pin Diode Original PDF
    MMBV3700LT1 On Semiconductor High Voltage Silicon Pin Diodes Original PDF
    MMBV3700LT1 On Semiconductor Switching PIN Diode SOT23 200V ; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBV3700LT1 On Semiconductor High Voltage Silicon Pin Diodes Original PDF
    MMBV3700LT1-D On Semiconductor High Voltage Silicon Pin Diodes Original PDF
    MMBV3700LT1G On Semiconductor Switching PIN Diode SOT23 200V ; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBV3700LT1G On Semiconductor Small Signal SOT23 Tuning Diode 200V Tape and Reel Original PDF
    MMBV3700R-12K PanJit Semiconductors SURFACE MOUNT PIN DIODE Original PDF
    MMBV3700R-3K PanJit Semiconductors SURFACE MOUNT PIN DIODE Original PDF
    MMBV3700T-12K PanJit Semiconductors SURFACE MOUNT PIN DIODE Original PDF
    MMBV3700T-3K PanJit Semiconductors SURFACE MOUNT PIN DIODE Original PDF

    MMBV3700 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volt POWER 200 mW 0.006 0.15 MIN. FEATURES 0.120(3.04) • High reverse breakdown voltage (200V min) 0.110(2.80) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)


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    MMBV3700 100MHz 300ns 2011/65/EU IEC61249 2014-REV PDF

    MMBV3700LT1G

    Abstract: MMBV3700LT1 MPN3700 MPN3700G
    Text: MMBV3700LT1, MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for


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    MMBV3700LT1, MPN3700 OT-23 MMBV3700LT1/D MMBV3700LT1G MMBV3700LT1 MPN3700 MPN3700G PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a


    Original
    MMBV3700LT1/D MMBV3700LT1 MPN3700 MMBV3700LT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Pin Diode MMBV3700LT1 These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for economical, high–volume consumer and industrial requirements. They


    Original
    MMBV3700LT1 236AB) 25Vdc PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBV3700 SURFACE MOUNT PIN DIODE 200 Volts POWER SOT-23 200 mW Unit:inch mm • High reverse breakdown voltage (200V min) 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)


    Original
    MMBV3700 100MHz 300ns 2002/95/EC IEC61249 OT-23 OT-23, RB500V-40 MMBV3700 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBV3700LT1G High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements.


    Original
    MMBV3700LT1G MMBV3700LT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for


    Original
    PDF

    MMBV3700LT1

    Abstract: MPN3700 motorola MPN3700 SMD310
    Text: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a


    Original
    MMBV3700LT1/D MMBV3700LT MPN3700 MMBV3700LT1 MPN3700 motorola MPN3700 SMD310 PDF

    MPN3700

    Abstract: MMBV3700LT1 SMD310
    Text: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for


    Original
    MMBV3700LT1 MPN3700 r14525 MMBV3700LT1D MPN3700 MMBV3700LT1 SMD310 PDF

    MMBV3700

    Abstract: No abstract text available
    Text: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volts POWER 200 mW FEATURES • High reverse breakdown voltage 200V min • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical) • Low capacitance (0.5 pF typical @V R=20V)


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    MMBV3700 100MHz 300ns 2002/95/EC OT-23, MIL-STD-750, MMBV3700 PDF

    MMBV3700LT1

    Abstract: MPN3700 SMD310
    Text: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for


    Original
    MMBV3700LT1 MPN3700 236AB) r14525 MMBV3700LT1/D MMBV3700LT1 MPN3700 SMD310 PDF

    MMBV3700LT1G

    Abstract: marking 4r
    Text: MMBV3700LT1G High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements.


    Original
    MMBV3700LT1G OT-23 MMBV3700LT1/D MMBV3700LT1G marking 4r PDF

    MPN3700

    Abstract: diode MMBV3700LT1 R 2.8 diode MMBV3700LT1 Diode marking 4R
    Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode MMBV3700LT1 These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for


    Original
    MMBV3700LT1 236AB) 25Vdc MPN3700 diode MMBV3700LT1 R 2.8 diode MMBV3700LT1 Diode marking 4R PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for


    Original
    MMBV3700LT1 MPN3700 PDF

    MMBV3700LT1

    Abstract: MMBV3700LT1G
    Text: MMBV3700LT1 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a cost-effective plastic package for economical, high-volume consumer and industrial requirements.


    Original
    MMBV3700LT1 OT-23 MMBV3700LT1/D MMBV3700LT1 MMBV3700LT1G PDF

    MMBV3700

    Abstract: No abstract text available
    Text: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volts POWER 200 mW SOT- 23 Unit: inch mm FEATURES .007(.20)MIN .103(2.60) .056(1.40) .047(1.20) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)


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    MMBV3700 100MHz 300ns OT-23, MMBV3700 PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a


    OCR Scan
    MMBV3700LT1/D MMBV3700LT MPN3700 200IMUM. T0-226AC) b3b72SS PDF

    U08C

    Abstract: G016 CASE318-07
    Text: MOTOROLA SEMICONDUCTOR MMBV3700L MPN3700 TECHNICAL DATA SILICON PIN SWITCHING DIODES HIGH VOLTAGE SILICON PIN DIODES . . . d e s ig n e d p rim a rily fo r V H F b an d sw itch in g a p p licatio n s but also su ita b le fo r use in g e n e ra l-p u rp o s e sw itch in g and a tte n u a to r


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    MMBV3700L MPN3700 U08C G016 CASE318-07 PDF

    sca marking

    Abstract: No abstract text available
    Text: HIGH VOLTAGE SILICON PIN DIODES MMBV3700LT1 MPN3700 . . . d e s ig n e d p rim a rily fo r VH F b an d sw itch in g ap p licatio n s but also su itab le fo r use in g en e ra l-p u rp o s e sw itch in g circuits. S u p p lie d in a cost effe ctive plastic p ackage fo r eco n o m ic a l, h ig h -v o lu m e c o n s u m e r and industrial


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    MMBV3700LT1 MPN3700 OT-23 sca marking PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE SILICON PIN DIODES MMBV3700LT1 MPN3700 . . . designed prim arily for VHF band switching applications but also suitable for use in general-purpose switching circuits. Supplied in a cost effective plastic package for econom ical, high-volum e consum er and industrial


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    MMBV3700LT1 MPN3700 OT-23 O-236AB) MPN3700 PDF

    DIODE MOTOROLA 33A

    Abstract: No abstract text available
    Text: MOTOROLA SC OIODES/OPTOJ SÏ ÏF lt3 t.7 2 S S DDSSItS B f - OT - I $ I MMBV3700 MMBV3700L M OTOROLA SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 SILICON PIN SWITCHING DIODE HIGH VOLTAGE SILICON PIN DIODE M M BV3700 • ” •"1 ' r - . . . designed primarily for VHF band switching applications but also


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    MMBV3700 MMBV3700L BV3700 OT-23 DIODE MOTOROLA 33A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a


    OCR Scan
    MMBV3700LT1/D MMBV3700LT MPN3700 OT-23 3700LT1/D PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 PDF