capacitor 103 250v
Abstract: Lbn45.75 PM1-M1.75 BT-N51KRI-LC4.75 capacitor+63v+1000+micro+f
Text: MMC Dimensions MMC Character NISSEI METALLIZED POLYESTER FILM CAPACITOR Type MMC Features Smaller version of MMH type. Very small size, achieved by our unique manufacturing method. Highly reliable because of its self-healing performance. Uniform flame retardant epoxy resin coating through the latest resin technology.
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1000hr
capacitor 103 250v
Lbn45.75
PM1-M1.75
BT-N51KRI-LC4.75
capacitor+63v+1000+micro+f
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PDF
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DIM200PHM33-A000
Abstract: No abstract text available
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces October 2001, version DS5464-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-4
DS5464-5
DIM200PHM33-A000
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emmc 4.4 standard jedec
Abstract: GLS85VM1008A-M-I-LFWE-ND200 Specification eMMC 4.0 emmc bga eMMC data retention BGA EMMC
Text: GLS85VM1008A / 1016A / 1032A Industrial Temp eMMC NANDrive Fact Sheet 01.000 March 2013 Features • Industry Standard Embedded MultiMediaCard eMMC Host Interface - JEDEC/MMC Standard Version 4.4 JESD84-A44 compliant - Backward compatible with eMMC 4.3
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GLS85VM1008A
JESD84-A44
52MHz
180mA
GLS85VM1032A)
150mA
GLS85VM1016A)
120mA
GLS85VM1008A)
S71425-F
emmc 4.4 standard jedec
GLS85VM1008A-M-I-LFWE-ND200
Specification eMMC 4.0
emmc bga
eMMC data retention
BGA EMMC
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PDF
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IC 7800
Abstract: diode current 1200A DIM1200ESM33-A000
Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces June 2002, version DS5492-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5492-5.0 February 2003
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DIM1200ESM33-A000
DS5492-4
DS5492-5
IC 7800
diode current 1200A
DIM1200ESM33-A000
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PDF
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Untitled
Abstract: No abstract text available
Text: DIM400GDM33-A000 DIM400GDM33-A000 Dual Switch IGBT Module Replaces December 2001, version DS5495-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5495-4.0 May 2002
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DIM400GDM33-A000
DS5495-3
DS5495-4
DIM400GDlity
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ic 7494
Abstract: DIM400GDM33-A000
Text: DIM400GDM33-A000 DIM400GDM33-A000 Dual Switch IGBT Module Replaces May 2002, version DS5495-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5495-4.1 June 2002
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DIM400GDM33-A000
DS5495-4
ic 7494
DIM400GDM33-A000
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PDF
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DIM1200ESM33-A000
Abstract: No abstract text available
Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces May 2002, version DS5492-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5492-4.0 June 2002
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DIM1200ESM33-A000
DS5492-3
DS5492-4
DIM1200ESM33-A000
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PDF
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IC 7800
Abstract: DIM1200ESM33-A000
Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces June 2002, version DS5492-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5492-5.0 February 2003
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DIM1200ESM33-A000
DS5492-4
DS5492-5
IC 7800
DIM1200ESM33-A000
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PDF
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Untitled
Abstract: No abstract text available
Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1200ESM33-A000
DS5492-5
DS5492-6
DIM1200ESM33y
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PDF
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AN4505
Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
Text: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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GP800DDM18
DS5364-2
DS5364-3
3300y
AN4505
GP800DDM18
AN4502
AN4503
12V DC sine wave inverters circuit diagram
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PDF
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AN4502
Abstract: AN4503 GP1200ESM33 DS5308-1
Text: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001
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GP1200ESM33
DS5308-1
DS5308-2
GP1200ESM33
AN4502
AN4503
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AN4502
Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
Text: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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GP800DDM12
DS5291-1
DS5291-2
AN4502
AN4503
AN4505
AN4506
GP800DDM12
dynex igbt 1200v
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Untitled
Abstract: No abstract text available
Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1200ESM33-A000
DS5492-5
DS5492-6
DIM1200ESM33y
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bi-directional switches IGBT
Abstract: H BRIDGE inverters circuit diagram using igbt inverter power 12v dc to 220 dc circuit diagram 125 diode Material Handling Systems power recovery diode DIM200PHM33-A000
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces June 2002, version DS5464-6.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-6
DIM200PHM33-A000
bi-directional switches IGBT
H BRIDGE inverters circuit diagram using igbt
inverter power 12v dc to 220 dc circuit diagram
125 diode
Material Handling Systems
power recovery diode
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bi-directional switches IGBT
Abstract: DIM200PHM33-A000
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces November 2002, version DS5464-6.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-6
DS5464-7
DIM200PHM33-A000
bi-directional switches IGBT
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PDF
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Untitled
Abstract: No abstract text available
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces November 2002, version DS5464-6.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-6
DS5464-7
DIM200PHM33-A000
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PDF
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DIM200PHM33-F000
Abstract: No abstract text available
Text: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module Replaces June 2003 version, issue PDS5606-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability
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DIM200PHM33-F000
PDS5606-2
PDS5606-3
DIM200PHM33-F000
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DIM800NSM33-F000
Abstract: PDS5615-2 4800 8 PIN IC
Text: DIM800NSM33-F000 DIM800NSM33-F000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5615-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability
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DIM800NSM33-F000
PDS5615-2
PDS5615-3
DIM800NSM33-F000
4800 8 PIN IC
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PDF
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DIM200PHM33-A000
Abstract: tc 2608
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces May 2002, version DS5464-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-5
DS5464-6
DIM200PHM33-A000
tc 2608
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PDF
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mj power transistor
Abstract: PDS5615-2 DIM800NSM33-F000
Text: DIM800NSM33-F000 DIM800NSM33-F000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5615-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability
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DIM800NSM33-F000
PDS5615-2
PDS5615-3
1050g
mj power transistor
DIM800NSM33-F000
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PDF
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723 ic internal diagram
Abstract: DIM400GDM33-A000
Text: DIM400GDM33-A000 DIM400GDM33-A000 Dual Switch IGBT Module Preliminary Information Replaces September 2001, version DS5495-1.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM400GDM33-A000
DS5495-1
723 ic internal diagram
DIM400GDM33-A000
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DIM800DCM12-A000
Abstract: 4E26
Text: DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5548- KEY PARAMETERS
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DIM800DCM12-A000
DS5548-2
DS5548-
DIM800DCM12-A000
4E26
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K1p TRANSISTOR
Abstract: AN4502 AN4503 AN4505 GP1600FSM18
Text: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001
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GP1600FSM18
DS5361-1
DS5361-2
GP1600FSM18
K1p TRANSISTOR
AN4502
AN4503
AN4505
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bi-directional switches IGBT
Abstract: DIM800DCM12-A000
Text: DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5548- KEY PARAMETERS
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DIM800DCM12-A000
DS5548-2
DS5548-
DIM800DCM12-A000
bi-directional switches IGBT
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