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Catalog Datasheet	MFG & Type	PDF	Document Tags
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	PDF	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
MMFT3055E Abstract: 2N3904 AN569 MMFT3055ET1 MMFT3055ET3 Text: MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source	Original	PDF	MMFT3055E OT-223 OT-223 MMFT3055E/D MMFT3055E 2N3904 AN569 MMFT3055ET1 MMFT3055ET3
Untitled Abstract: No abstract text available Text: MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source	Original	PDF	MMFT3055E OT-223 OT-223 MMFT3055E/D
mosfet L 3055 motorola Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3 Text: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET	Original	PDF	MMFT3055E/D MMFT3055E MMFT3055E/D* mosfet L 3055 motorola L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
mosfet L 3055 motorola Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET	OCR Scan	PDF	OT-223 MMFT3055E mosfet L 3055 motorola
mosfet L 3055 motorola Abstract: FT3055E sot-223 body marking D K Q F Text: O rder this data sheet by M M FT3055ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount MMFT3055ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed	OCR Scan	PDF	FT3055ET1/D OT-223 2PHX31317F-0 MMFT3055ET1/D mosfet L 3055 motorola FT3055E sot-223 body marking D K Q F
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA M edium Pow er Field E ffect Transistor MMFT3055E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount This advanced E -F E T is a TM O S M edium Power M OSFET	OCR Scan	PDF	MMFT3055E/D MMFT3055E OT-223 318E-04 O-261AA OT-223