SLF10165
Abstract: tdk 6407 SLF10145T-101M1R0-H SLF10145T-100M2R5-H SLF10145-H SLF10145T SLF10145T-100M2R5-PF SLF10165T-470M2R03PF SLF10145T-220M1R9-PF SLF10145T-331MR54
Text: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / SLF10145 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] SLF10145T-3R3N3R7-PF 3.3 5352.2 1.5933 SLF10145T-5R6M3R2-PF 5.6 7860.9 2.8351
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SLF10145
SLF10145T-3R3N3R7-PF
SLF10145T-5R6M3R2-PF
SLF10145T-100M2R5-PF
SLF10145T-150M2R2-PF
SLF10145T-220M1R9-PF
SLF10145T-330M1R6-PF
SLF10145T-470M1R4-PF
SLF10145T-680M1R2-PF
SLF10145T-101M1R0-PF
SLF10165
tdk 6407
SLF10145T-101M1R0-H
SLF10145T-100M2R5-H
SLF10145-H
SLF10145T
SLF10145T-100M2R5-PF
SLF10165T-470M2R03PF
SLF10145T-220M1R9-PF
SLF10145T-331MR54
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7613DN www.vishay.com Vishay Siliconix SPICE Device Model Si7613DN DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7613DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Voltage Controlled Oscillator ROS-EDR6349 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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CK605
ROS-EDR6349
ROS-EDR6349
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Abstract: No abstract text available
Text: Engineering Development Model Voltage Controlled Oscillator ROS-EDR5370 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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CK605
ROS-EDR5370
ROS-EDR5370
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Frequency Mixer LAVI-ED12677 Level 20 LO Power +20 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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LAVI-ED12677
CK605
LAVI-ED12677
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78FR10K-RC
Abstract: 78FR22K-RC 78FR27K-RC 78FR33K-RC 78FR39K-RC 78FR47K-RC 78F6R8J-RC
Text: INDUCTIVE COMPONENTS July 18, 2007 CORRECTION TO PART NUMBERS ON SUMMARY TABLE, PAGE 2 Model 78F Model 79F Change in Color for Bourns /JW Miller Models 78F and 79F; Increased Current Rating - Model 78F; Elimination of Values from 270 µH to 470 µH - Model 79F
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Abstract: No abstract text available
Text: Engineering Development Model Frequency Mixer ADE-ED5921/2 Level 10 LO Power +10 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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ADE-ED5921/2
CD542
ADE-ED5921/2
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214E-01
Abstract: 0603LS
Text: Document 298 SPICE Model – 0603LS This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft ferrite surface mount inductors within the frequency range shown in the accompanying table. The equivalent lumped element model schematic is
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0603LS
87E-05
07E-05
34E-05
20E-05
54E-05
21E-04
15E-04
30E-04
214E-01
0603LS
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7613DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7613DN
18-Jul-08
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VLP4612
Abstract: VLP4614T-220MR40 VLP4612T-220MR34 VLP4612T-1R0M1R5 6775 CK switch toggle 7215 VLP4610 VLP4610T-100MR46 VLP4610T-150MR38 VLP4610T-1R8M1R0
Text: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / VLP4610 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] VLP4610T-1R8M1R0 1.8 4260.0 0.6889 0.1213 VLP4610T-2R7MR87 2.7 5688.4 0.7753 0.1866
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VLP4610
VLP4610T-1R8M1R0
VLP4610T-2R7MR87
VLP4610T-4R7MR66
VLP4610T-6R8MR55
VLP4610T-100MR46
VLP4610T-150MR38
VLP4612
VLP4614
VLP4614T-2R7M1R1
VLP4614T-220MR40
VLP4612T-220MR34
VLP4612T-1R0M1R5
6775
CK switch toggle 7215
VLP4610T-100MR46
VLP4610T-150MR38
VLP4610T-1R8M1R0
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Model 534
Abstract: Model 535 Spectrol potentiometer 5k ohm Spectrol potentiometer 200k ohm dual Potentiometers 1K 20k SPECTROL 122 Spectrol potentiometer 10k ohm
Text: Model 534 Including 533 & 535 Pr ecision Wir e Wound Precision ire Potentiometers The Model 534 10 turn precision wirewound potentiometer remains the primary choice in the wirewound market. With its many available special features which include two gang, rear
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ohms0746
Model 534
Model 535
Spectrol potentiometer 5k ohm
Spectrol potentiometer 200k ohm
dual Potentiometers 1K 20k
SPECTROL 122
Spectrol potentiometer 10k ohm
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA436DJ www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA436DJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SLF12575-H
Abstract: SLF12555T-680M1R3 SLF12565T-100M4R8-H SLF12565T-331MR87-H SLF12575T-331M1R0-PF SLF12565T-101M1R6-PF SLF12575T-100M5R4 SLF12575T-330M3R2-H SLF12565-H 106603
Text: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / SLF12555 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] SLF12555T-6R0N3R6-PF 6 7248.8 5.5282 0.0164 SLF12555T-100M3R4-PF 10 9944.8 3.9877
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SLF12555
SLF12555T-6R0N3R6-PF
SLF12555T-100M3R4-PF
SLF12555T-150M2R8-PF
SLF12555T-220M2R3-PF
SLF12555T-330M1R9-PF
SLF12555T-470M1R6-PF
SLF12555T-680M1R3-PF
SLF12555T-101M1R1-PF
SLF12555T-151MR88-PF
SLF12575-H
SLF12555T-680M1R3
SLF12565T-100M4R8-H
SLF12565T-331MR87-H
SLF12575T-331M1R0-PF
SLF12565T-101M1R6-PF
SLF12575T-100M5R4
SLF12575T-330M3R2-H
SLF12565-H
106603
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S-112-302
Abstract: SiA436DJ 63605
Text: SPICE Device Model SiA436DJ www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA436DJ
11-Mar-11
S-112-302
63605
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A2023
Abstract: 70953 SiB412DK
Text: SPICE Device Model SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiB412DK
S-70953Rev.
14-May-07
A2023
70953
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SUM90N10
Abstract: SUM90N10-8m2P
Text: SPICE Device Model SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM90N10-8m2P
18-Jul-08
SUM90N10
SUM90N10-8m2P
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Si7866ADP
Abstract: No abstract text available
Text: SPICE Device Model Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7866ADP
S-51946Rev.
03-Oct-05
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP90N10-8m8P Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP90N10-8m8P
18-Jul-08
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74207
Abstract: Si1450DH
Text: SPICE Device Model Si1450DH Vishay Siliconix N-Channel 8-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1450DH
18-Jul-08
74207
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Si7866ADP
Abstract: No abstract text available
Text: SPICE Device Model Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7866ADP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Surface Mount and DIP Pressure Sensors Low-cost packaged die Model Model Model Model 5310 standard pressure surface m ount 5350 ( low-pressure surface m ount) 5410 ( standard pressure DIP) 5450 ( low-pressure D IP) Description Silicon Microstructures provides its
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Untitled
Abstract: No abstract text available
Text: V1SHAY Numerical Index Vishay Spectrol MODEL NUMBER. PAGE NO MODEL NUMBER. PAGE NO 3 H . 10 159. 62
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LT1560ED
Abstract: PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51
Text: SHARP Model No. List Model No. List • Infrared Emitting Diodes Model No. GL1F20 GL380 QL381 GL382 GL390 GL390V GL453 GL454 GL480 GL480Q GL4S3Q GL4800 GL460 GL461 GL4600 GL4610 GL4100 GL4200 GL4910 GL496 GL513F GL514 GL560 GL561 GL533 GL537 GL538 GL550 GL551
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GL1F20
GL380
QL381
GL382
GL390
GL390V
GL453
GL454
GL480
GL480Q
LT1560ED
PQ2WZ51
LT024MD
GP1F31T
s202t02
GP1U801X
LT022
GP2L20L
GP1U78R
PQ05DZ51
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ic 565 specifications
Abstract: No abstract text available
Text: T -l DUAL-STACKED PCB MOUNT LEDs Data D isplay Products spectm ty operation • Low Power, Bi-Color, Integrated Resistor • Red, Amber, Green • For Detailed LED Data, See Discrete Section, MODEL 125 LED l Top (Model 125} Model PCT125 I Sight Angle Mount
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PCT125
-BA12V
-BG12V
for12VDC
12VDC
/BR12V
/BA12V
/BG12V
PCT125-BR12V/BR12V
ic 565 specifications
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