MOSFET,P,D PACKAGE Search Results

MOSFET,P,D PACKAGE Result Highlights (5)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)
XPH3R206NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF)
TPH4R008QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N)

MOSFET,P,D PACKAGE Price and Stock

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Panduit Corp ACC62-A-D Adhesive backed cord clip, .62" (15.8mm) bundle, natural, bulk package.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	ACC62-A-D		4,503			1 - 10 - 100 - 1000 $0.61 10000 $0.55	Buy Now
Panduit Corp PN10-56R-D Ring Terminal, 12 – 10 AWG, 5/16" stud size, nylon insulated, bulk package.
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Onlinecomponents.com	PN10-56R-D		3,534			1 - 10 - 100 - 1000 $0.665 10000 $0.569	Buy Now
Panduit Corp PS12-D Parallel Splice, non-insulated, 14 – 12 AWG, bulk package.
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Onlinecomponents.com	PS12-D		2,650			1 - 10 - 100 - 1000 $0.2392 10000 $0.2268	Buy Now
Panduit Corp PV10-6F-D Fork Terminal, vinyl insulated, funnel entry, 14- 10AWG, #6 stud size, bulk package.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	PV10-6F-D		2,500			1 - 10 - 100 - 1000 $0.4482 10000 $0.321	Buy Now
Panduit Corp PSN12-D Parallel Splice, 14 – 12 AWG, nylon insulated, bulk package.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	PSN12-D		2,010			1 - 10 - 100 - 1000 $0.373 10000 $0.336	Buy Now

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MOSFET,P,D PACKAGE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Diode SMD ED 9a Abstract: RK 73 SMD marking SH SOT23 mosfet IRLMS6702 LTA 702 N MP 9141 MOSFET marking smd NU 702 mosfet smd marking DIODE marking S6 96 smd diode marking mp Text: PD 9.1414A IRLMS6702 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V RDS(on) = 0.20Ω To p V ie w Description Fifth Generation HEXFETs from International Rectifier	Original	PDF	IRLMS6702 Diode SMD ED 9a RK 73 SMD marking SH SOT23 mosfet IRLMS6702 LTA 702 N MP 9141 MOSFET marking smd NU 702 mosfet smd marking DIODE marking S6 96 smd diode marking mp
6x marking sot-23 p-channel Abstract: IRLMS4502 IRLMS6702 Text: PD- 93759A IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 2 5 3 4 A D VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier	Original	PDF	3759A IRLMS4502 OT-23. boaS4502 6x marking sot-23 p-channel IRLMS4502 IRLMS6702
irlms4502 Abstract: No abstract text available Text: PD- 93759 IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier	Original	PDF	IRLMS4502 OT-23. irlms4502
SUM110P04-04L Abstract: No abstract text available Text: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −40 ID (A)d 0.0042 @ VGS = −10 V −110 0.0062 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance APPLICATIONS	Original	PDF	SUM110P04-04L O-263 S-40840--Rev. 03-May-04 SUM110P04-04L
SUM110P06-07L Abstract: 40842 SUM110P06-07L-E3 Text: SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.0069 @ VGS = −10 V −110 0.0088 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance APPLICATIONS	Original	PDF	SUM110P06-07L O-263 SUM110P06-07L--E3 08-Apr-05 SUM110P06-07L 40842 SUM110P06-07L-E3
Untitled Abstract: No abstract text available Text: SUM110P06-07L Vishay Siliconix New Product P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) - 60 ID (A)d 0.0069 @ VGS = - 10 V - 110 0.0088 @ VGS = - 4.5 V - 110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance	Original	PDF	SUM110P06-07L O-263 SUM110P06-07L S-31870--Rev. 15-Sep-03
72437 Abstract: No abstract text available Text: SUM110P04-04L Vishay Siliconix New Product P-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) - 40 ID (A)d 0.0042 @ VGS = - 10 V - 110 0.0062 @ VGS = - 4.5 V - 110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance	Original	PDF	SUM110P04-04L O-263 SUM110P04-04L S-31869--Rev. 15-Sep-03 72437
A4410 Abstract: No abstract text available Text: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −40 ID (A)d 0.0042 @ VGS = −10 V −110 0.0062 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance APPLICATIONS	Original	PDF	SUM110P04-04L O-263 SUM110P04-04L 08-Apr-05 A4410
40842 Abstract: SUM110P06-07L sum110p06-07l-e3 Text: SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.0069 @ VGS = −10 V −110 0.0088 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance APPLICATIONS	Original	PDF	SUM110P06-07L O-263 SUM110P06-07L--E3 S-40842--Rev. 03-May-04 40842 SUM110P06-07L sum110p06-07l-e3
272c Abstract: SUM110P06-08L-E3 SUM110P06-08L Text: SUM110P06-08L New Product Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.008 @ VGS = −10 V −110 0.0105 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance	Original	PDF	SUM110P06-08L O-263 SUM110P06-08L--E3 S-41506--Rev. 09-Aug-04 272c SUM110P06-08L-E3 SUM110P06-08L
SUM110P06-08L Abstract: No abstract text available Text: SUM110P06-08L New Product Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.008 @ VGS = −10 V −110 0.0105 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance	Original	PDF	SUM110P06-08L O-263 SUM110P06-08L SUM110P06-08L--E3 08-Apr-05
Si7485DP Abstract: Si7485DP-T1 Text: Si7485DP Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0073 @ VGS = - 4.5 V - 20 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.0090 @ VGS = - 2.5 V	Original	PDF	Si7485DP 07-mm Si7485DP-T1 S-31416--Rev. 07-Jul-03
40411 transistor Abstract: 40411 transistor 40411 Si7461DP Text: Si7461DP Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0145 @ VGS = −10 V −14.4 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.019 @ VGS = −4.5 V	Original	PDF	Si7461DP 07-mm Si7461DP-T1--E3 S-40411--Rev. 15-Mar-04 40411 transistor 40411 transistor 40411
Si7923DN Abstract: No abstract text available Text: Si7923DN New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.047 @ VGS = −10 V −6.4 0.075 @ VGS = −4.5 V −5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package	Original	PDF	Si7923DN Si7923DN-T1--E3 S-51129--Rev. 13-Jun-05

Si7705DN Abstract: Si7705DN-T1 Text: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) - 20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKr Package with Low 1.07-mm Profile ID (A)	Original	PDF	Si7705DN 07-mm Si7705DN-T1ent S-22520--Rev. 27-Jan-03 Si7705DN-T1
Untitled Abstract: No abstract text available Text: Si4927DY V1SHAY Siliconix Dual P-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.028 @ VGS = —10 V ±7 .4 0.045 @ VGS = —4.5 V ±5 .8 -3 0 1 ° ' Si S2 O Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET	OCR Scan	PDF	Si4927DY S2SM735 DD17flflT
Untitled Abstract: No abstract text available Text: P D - 9 .1 2 6 4 C International IG R Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching Vqss = -30V ^ D S (o n) = 0.09Q	OCR Scan	PDF	IRF7606
IRF7319 Abstract: 49AA Text: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch	OCR Scan	PDF	IRF7319 IRF7319 49AA
Untitled Abstract: No abstract text available Text: Tem ic Si9434ADY Semiconductors Single P-Channel, 2.5-V G-S Rated MOSFET Product Sum m ary VDS(V) 20 rDS(on) (Q) 0.033 @ VGs = - 4.5 V 0.050 @ VGs = - 2.5 V I d (A) ± 6.9 ± 5.6 sss O O P SO-8 D D D D P-Channel MOSFET Absolute M axim um Ratings (Ta = 25°C Unless Otherwise Noted)	OCR Scan	PDF	Si9434ADY 150BMic S2SM735 DD17flflT
Untitled Abstract: No abstract text available Text: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)	OCR Scan	PDF	Si9407AEY S-57253â 24-Feb-98 S2SM735 DD17flflT
marking code FFD Abstract: IRF7604 Text: P D -9 .1 2 6 3 D International IQR Rectifier IRF7604 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss = -20V	OCR Scan	PDF	IRF7604 sEIA-481 EIA-541. marking code FFD IRF7604
Untitled Abstract: No abstract text available Text: P D - 917 0 5 International l R Rectifier IRF7322D1 PRELIMINARY FETKY MOSFET/ Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low V F Schottky Rectifier Generation 5 Technology	OCR Scan	PDF	IRF7322D1
ir*526 Abstract: smd diode schottky code marking 2F Text: P D - 9.1649 International IGR Rectifier IRF7526D1 PRELIMINARY FETKY • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low Vp Schottky Rectifier • Generation V Technology • Micro8 Footprint Description MOSFET and Schottky Diode	OCR Scan	PDF	IRF7526D1 Rf7526d1 ir*526 smd diode schottky code marking 2F
S 0240 Abstract: No abstract text available Text: PAIRCHII-D November 1998 M IC D N D U C T Q R ! FDN340P Single P-Channel 2.5V Specified Pow erTrench MOSFET Features General D escription This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the	OCR Scan	PDF	FDN340P S 0240

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MOSFET,P,D PACKAGE Search Results

MOSFET,P,D PACKAGE Result Highlights (5)

MOSFET,P,D PACKAGE Price and Stock

Panduit Corp ACC62-A-D

Panduit Corp PN10-56R-D

Panduit Corp PS12-D

Panduit Corp PV10-6F-D

Panduit Corp PSN12-D

MOSFET,P,D PACKAGE Datasheets Context Search

Diode SMD ED 9a

6x marking sot-23 p-channel

irlms4502

SUM110P04-04L

SUM110P06-07L

Untitled

72437

A4410

40842

272c

SUM110P06-08L

Si7485DP

40411 transistor

Si7923DN

Si7705DN

Untitled

Untitled

IRF7319

Untitled

Untitled

marking code FFD

Untitled

ir*526

S 0240