Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . OPTOCOUPLER Optocouplers – MOSFET Drivers with Solid State Reliability VO1263, LH1262 Photovoltaic Single-Component/Isolated MOSFET Driver Solutions Vishay’s isolated MOSFET drivers combine isolation, MOSFET driver circuitry, and a self-contained
|
Original
|
VO1263,
LH1262
VO1263/LH
VO1263
VMN-PT0314-1402
|
PDF
|
t 3866 mosfet
Abstract: No abstract text available
Text: FDA28N50 N-Channel UniFETTM MOSFET 500 V, 28 A, 155 mΩ Features Description • RDS on = 122 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
|
Original
|
FDA28N50
t 3866 mosfet
|
PDF
|
3nf CAPACITOR
Abstract: 839B IXS839S1
Text: IXYS IXS839 / IXS839A / IXS839B Synchronous Buck MOSFET Driver Features: General Description • Logic Level Gate Drive Compatible The IXS839/IXS839A/IXS839B are 2A Source / 4A Sink Synchronous Buck MOSFET Drivers. These Synchronous Buck MOSFET Drivers are specifically
|
Original
|
IXS839
IXS839A
IXS839B
IXS839/IXS839A/IXS839B
3000pF
IXS839/839B:
IXS839A/B:
3nf CAPACITOR
839B
IXS839S1
|
PDF
|
t 3866 mosfet
Abstract: MOSFET 3866 s 61mH
Text: FDA28N50 N-Channel UniFETTM MOSFET 500 V, 28 A, 155 m Features Description • RDS on = 122 m (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
|
Original
|
FDA28N50
FDA28N50
t 3866 mosfet
MOSFET 3866 s
61mH
|
PDF
|
VO1263
Abstract: high side MOSFET driver optocoupler LH1262 MOSFET Drivers Isolated mosfet gate drive circuit Isolated Floating Driver OPTOCOUPLER photovoltaic output VMN-PT0314-1205
Text: V i shay I n tertech n olo g y, I n c . Optocouplers – MOSFET Drivers with Solid State Reliability AND TEC I INNOVAT O L OGY VO1263, LH1262 N HN OPTOCOUPLER O 19 62-2012 Photovoltaic Single-Component/Isolated MOSFET Driver Solutions Vishay’s isolated MOSFET drivers combine isolation, MOSFET driver circuitry, and a self-contained
|
Original
|
VO1263,
LH1262
VO1263/LH
VO1263
VMN-PT0314-1205
high side MOSFET driver optocoupler
LH1262
MOSFET Drivers
Isolated mosfet gate drive circuit
Isolated Floating Driver
OPTOCOUPLER photovoltaic output
VMN-PT0314-1205
|
PDF
|
utc 324
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
|
Original
|
UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
OT-23-3
OT-23
QW-R502-133
utc 324
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
|
Original
|
APTMC60TLM20CT3AG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
|
Original
|
APTMC60TLM20CT3AG
|
PDF
|
Mosfet J49
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND
|
Original
|
MRF171A
Mosfet J49
|
PDF
|
mosfet 4702
Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
|
Original
|
IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
mosfet 4702
IXZ2210N50L
S 8050 d 331 transistor
dv 7812
9974 mosfet
9540 mosfet
78724
78105
MJ 7364
|
PDF
|
IXZ2210N50L
Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
|
Original
|
IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
IXZ2210N50L
"RF MOSFET" 300W
mosfet 4702
9540 mosfet
IXYS RF
|
PDF
|
80N08
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial
|
Original
|
80N08
80N08
80N08L-T47-T
80N08G-T47-T
80N08L-TA3-T
80N08G-TA3-T
80N08L-TQ2-T
80N08G-TQ2-T
80N08L-TQ2-R
80N08G-TQ2-R
|
PDF
|
IXDD 614
Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers
|
Original
|
AN0002
RH159NB
D-68623;
IXDD 614
BJT de potencia
zener diode 1N PH 48
CHN 841
lm339 igbt driver
ups transformer winding formula
mosfet igbt drivers theory
MOSFET IGBT DRIVERS THEORY AND APPLICATIONS
chn 614 diod
MOSFET IGBT THEORY AND APPLICATIONS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial
|
Original
|
80N08
80N08
80N08L-T47-T
80N08G-T47-T
80N08L-TA3-T
80N08G-TA3-T
80N08L-TQ2-T
80N08G-TQ2-T
80N08L-TQ2-R
80N08G-TQ2-R
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 0.2 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
|
Original
|
FQPF15P12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 28 A, 17 mΩ Features General Description Shielded Gate MOSFET Technology High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild
|
Original
|
FDMS86200DC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch + Pch MOSFET MP6M11 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm MPT6 (Duel) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). Application
|
Original
|
MP6M11
MP6M11
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing
|
Original
|
FCP380N60E
FCPF380N60E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N90 Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a
|
Original
|
O-220F
O-220F1
O-220
O-262
QW-R502-974
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial and primary switch
|
Original
|
80N08
80N08
O-220
O-220
80N08L-TA3-T
80N08G-TA3-T
QW-R502-468
|
PDF
|
IRF8736PBF
Abstract: IRF8736
Text: PD - 97120 IRF8736PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
|
Original
|
IRF8736PbF
IRF8736PBF
IRF8736
|
PDF
|
4558 mosfet
Abstract: 4558 dd 478D 45288 w83 310 T424 DIODE W83* dc-dc 4558 dv t424 327D
Text: PD - 97120 IRF8736PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
|
Original
|
IRF8736PbF
4558 mosfet
4558 dd
478D
45288
w83 310
T424 DIODE
W83* dc-dc
4558 dv
t424
327D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch + Pch MOSFET SH8M11 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive). (8) (5) (1) (4) Application
|
Original
|
SH8M11
SH8M11
Pw10s,
R1120A
|
PDF
|
Transistor Arrays
Abstract: transistor SST 126 IMD6 transistor 136 138 140
Text: "Transistors Surface Mounted Leaded Packages Available-«> Packages Available-110 POWER MOSFET-112 POWER MOSFET- ei MPT • CPT F5 • PSD
|
OCR Scan
|
ailable-------------------------------110
SFET----------------------------------112
T0-220FP
O-247
OT-23)
SC-59/Japemw
PSIP12Pin.
LF12Pin
Transistor Arrays
transistor SST 126
IMD6
transistor 136 138 140
|
PDF
|
