Untitled
Abstract: No abstract text available
Text: FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDB86135
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Untitled
Abstract: No abstract text available
Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) 0.04 Ω IRFN044 ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1545A
IRFN044
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IRFN044
Abstract: smd diode 44a
Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN044 R DS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1545A
IRFN044
IRFN044
smd diode 44a
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Untitled
Abstract: No abstract text available
Text: FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features Description • RDS on = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP80N06
145pF)
O-220
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mosfet 4702
Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts
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IXZ210N50L
IXZ2210N50L
175MHz
IXZ210N50L
175MHz
mosfet 4702
72728
IXZ2210N50L
24016 AN
78259
78442
TL 4941
69106
j934
mosfet 4942
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Untitled
Abstract: No abstract text available
Text: FDB44N25 N-Channel UniFETTM MOSFET 250 V, 44 A, 69 mΩ Features Description • RDS on = 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB44N25
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FDB44N25
Abstract: No abstract text available
Text: FDB44N25 N-Channel UniFETTM MOSFET 250 V, 44 A, 69 m Features Description • RDS on = 69 m (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB44N25
FDB44N25
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Mosfet J49
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND
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MRF171A
Mosfet J49
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Untitled
Abstract: No abstract text available
Text: FDPF44N25T N-Channel UniFETTM MOSFET 250 V, 44 A, 69 m Features Description • RDS on = 69 m (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDPF44N25T
FDPF44N25T
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SiC POWER MOSFET
Abstract: sic MOSFET APTMC60TLM14CAG
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
SiC POWER MOSFET
sic MOSFET
APTMC60TLM14CAG
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mosfet 4702
Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
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IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
mosfet 4702
IXZ2210N50L
S 8050 d 331 transistor
dv 7812
9974 mosfet
9540 mosfet
78724
78105
MJ 7364
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IXZ2210N50L
Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
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IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
IXZ2210N50L
"RF MOSFET" 300W
mosfet 4702
9540 mosfet
IXYS RF
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
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Untitled
Abstract: No abstract text available
Text: FQP45N15V2 / FQPF45N15V2 N-Channel QFET MOSFET 150 V, 45 A, 40 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
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FQP45N15V2
FQPF45N15V2
FQPF45N15V2
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Untitled
Abstract: No abstract text available
Text: FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 28 A, 17 mΩ Features General Description Shielded Gate MOSFET Technology High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild
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FDMS86200DC
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MRF173
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz
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MRF173
MRF173.
AN721,
MRF173
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MRF177
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 400 MHz
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MRF177/D
MRF177
MRF177/D
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an799
Abstract: MOSFET 500V 15A mosfet 55 nf 06 an799 microchip tc1426 TC4431 application 348 mosfet MOSFET 6A "MOSFET " 400V TC4425
Text: AN799 MOSFET 驱动器与 MOSFET 的匹配设计 作者： Jamie Dunn Microchip Technology Inc. 2. 由于 MOSFET 驱动器吸收静态电流而产生的功 耗。 公式 2： 简介 当今多种 MOSFET 技术和硅片制程并存，而且技术进 步日新月异。要根据 MOSFET 的电压 / 电流或管芯尺
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AN799
500V14AN
an799
MOSFET 500V 15A
mosfet 55 nf 06
an799 microchip
tc1426
TC4431 application
348 mosfet
MOSFET 6A
"MOSFET " 400V
TC4425
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Untitled
Abstract: No abstract text available
Text: FQP45N15V2 / FQPF45N15V2 N-Channel QFET MOSFET 150 V, 45 A, 40 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQP45N15V2
FQPF45N15V2
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MRF173
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 200 MHz
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MRF173/D
MRF173
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210ts
Abstract: No abstract text available
Text: GU General Use Type SOP Series Multi-function (MOSFET & optocoupler) 16 Pin Type UL File No.: E43149 CSA File No.: LR26550 10.37 .408 4.4 .173 2.1 .083 2 MOSFET Relay and 1 optocoupler type 10.37 .408 1 MOSFET Relay and 2 optocouplers type 4.4 .173 2.1 .083
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E43149
LR26550
16-Pin
083inch
AQS210TS)
AQS210T2S)
AQS210TS
210ts
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alc 885
Abstract: "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200
Text: Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz
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MRF173/D
MRF173
alc 885
"RF MOSFETs"
1N5925A
AN211A
AN721
MRF173
VK200
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Untitled
Abstract: No abstract text available
Text: FDC8601 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDC8601
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