A1 dual diode
Abstract: ZXMN2AM832 log sheet air conditioning MLP832 ZXMN2AM832TA ZXMN2AM832TC
Text: ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure
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ZXMN2AM832
A1 dual diode
ZXMN2AM832
log sheet air conditioning
MLP832
ZXMN2AM832TA
ZXMN2AM832TC
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DM13A
Abstract: log sheet air conditioning MLP832 ZXMN2AM832 ZXMN2AM832TA ZXMN2AM832TC
Text: ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure
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ZXMN2AM832
switch00
DM13A
log sheet air conditioning
MLP832
ZXMN2AM832
ZXMN2AM832TA
ZXMN2AM832TC
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UD6604-H Power MOSFET 20V COMPLEMENTARY MOSFET DESCRIPTION The UTC UD6604-H is a 20V complementary MOSFET, it uses UTC’s advanced technology to provide the customers a minimum on state resistance, etc. The UTC UD6604-H is suitable for load switch and battery
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UD6604-H
UD6604-H
UD6604G-AG6-R
QW-R211-026
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Mosfet
Abstract: SSF2122E
Text: SSF2122E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 15.2mohm(typ.) ID 7A ① DFN 3x3-8L Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2122E
2122E
3000pcs
12000pcs
48000pcs
Mosfet
SSF2122E
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Mosfet
Abstract: SSF2341E marking 2341E 2341E marking 4a sot23
Text: SSF2341E 20V P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 37mΩ (typ.) ID -4A ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2341E
OT-23
for2341E
2341E
Mosfet
SSF2341E
marking 2341E
2341E
marking 4a sot23
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Untitled
Abstract: No abstract text available
Text: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary V BR DSS RDS(ON) 20V 0.12Ω @ VGS = 10V Features • • • • • • • • ID TA = +25°C 2.2A Description This new generation MOSFET is designed to minimize the on-state
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ZXMN2A01F
AEC-Q101
DS33513
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Untitled
Abstract: No abstract text available
Text: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features V BR DSS RDS(ON) 20V 0.12Ω @ VGS = 10V ID TA = +25°C 2.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching
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ZXMN2A01F
AEC-Q101
DS33513
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FDMJ1032C
Abstract: marking 032 SC-75 Dual N & P-Channel
Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement
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FDMJ1032C
FDMJ1032C
marking 032
SC-75
Dual N & P-Channel
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ZXM63C02
Abstract: MO-187 ZXMD63C02X ZXMD63C02XTA ZXMD63C02XTC DSA003665
Text: ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=20V; RDS(ON)=0.13⍀; ID=2.4A P-CHANNEL: V(BR)DSS DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique
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ZXMD63C02X
D-81673
ZXM63C02
MO-187
ZXMD63C02X
ZXMD63C02XTA
ZXMD63C02XTC
DSA003665
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MLP832
Abstract: ZXMP62M832 ZXMP62M832TA
Text: ZXMP62M832 MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V BR DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure
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ZXMP62M832
MLP832
ZXMP62M832
ZXMP62M832TA
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ELM14805AA
Abstract: No abstract text available
Text: 双 P 沟道 MOSFET ELM14805AA-N •概要 ■特点 ELM14805AA-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-8A Vgs=-20V ·Rds(on) < 18mΩ (Vgs=-20V) ·Rds(on) < 19mΩ (Vgs=-10V)
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ELM14805AA-N
ELM14805AA
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Untitled
Abstract: No abstract text available
Text: SMD Type MOSFET Complementary PowerTrench MOSFET KDC6020C FDC6020C ( SOT-23-6 ) Unit: mm • Features ● RDS(ON) ＜ 27mΩ (V GS = 4.5V) ● RDS(ON) ＜ 39mΩ (V GS = 2.5V) 6 5 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=5.9A 4 ● P-Channel： VDS =-20V ID=-4.2A
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KDC6020C
FDC6020C)
OT-23-6
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IRL5NJ7404
Abstract: No abstract text available
Text: PD - 94052 LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRL5NJ7404
IRL5NJ7404
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diode 2a02
Abstract: No abstract text available
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
diode 2a02
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IRL5NJ7404
Abstract: No abstract text available
Text: PD - 94052A LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4052A
IRL5NJ7404
IRL5NJ7404
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ZXMN2A02N8TA
Abstract: ZXMN2A02N8TC 2A02 TS16949 ZXMN2A02N8
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
D-81541
ZXMN2A02N8TA
ZXMN2A02N8TC
2A02
TS16949
ZXMN2A02N8
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2A02
Abstract: ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC sm50A
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
2A0200
2A02
ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
sm50A
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6P02
Abstract: ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC
Text: ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM66P02N8
ZXM66P02N8TA
ZXM66P02N8TC
INFORMATI64-7630
6P02
ZXM66P02N8
ZXM66P02N8TA
ZXM66P02N8TC
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IRF7E3704
Abstract: LCC-18
Text: PD - 94678 HEXFET POWER MOSFET SURFACE MOUNT LCC-18 IRF7E3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7E3704 20V RDS(on) 0.05Ω ID 12A* LCC-18 ® Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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LCC-18)
IRF7E3704
LCC-18
IRF7E3704
LCC-18
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ZXMN2A02N8TA
Abstract: ZXMN2A02N8TC 2A02 ZXMN2A02N8 115AV
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
2A02ew
ZXMN2A02N8TA
ZXMN2A02N8TC
2A02
ZXMN2A02N8
115AV
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Untitled
Abstract: No abstract text available
Text: PD - 94052A LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4052A
IRL5NJ7404
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MLP832
Abstract: ZXMN2AM832 ZXMN2AM832TA ZXMN2AM832TC
Text: OBSOLETE - PLEASE USE ZXMN2AMCTA ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
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ZXMN2AM832
MLP832
ZXMN2AM832
ZXMN2AM832TA
ZXMN2AM832TC
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Untitled
Abstract: No abstract text available
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
D-81541
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UG 77A DIODE
Abstract: mosfet p-channel 300v MOSFET N-CH 200V DT92A international rectifier 137 IRF7317 ug 77A
Text: PD - 9.1568A International IGR Rectifier IRF7317 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MOSFET î _8 IS 2 Voss • & P-Ch 20V -20V
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IRF7317
C-142
C-143
UG 77A DIODE
mosfet p-channel 300v
MOSFET N-CH 200V
DT92A
international rectifier 137
IRF7317
ug 77A
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