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    MOSFET 2301 Search Results

    MOSFET 2301 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 2301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2301P

    Abstract: A2 SOT-23 mosfet A1 SOT-23 MOSFET P-CHANNEL
    Text: AF2301P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Small Package Outline - Surface Mount Device The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.


    Original     		PDF AF2301P OT-23 2301P OT-23 A2 SOT-23 mosfet A1 SOT-23 MOSFET P-CHANNEL

    2301P

    Abstract: A1 SOT-23 MOSFET P-CHANNEL marking code YW DIODE
    Text: AF2301P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Small Package Outline - Surface Mount Device The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.


    Original     		PDF AF2301P OT-23 2301P OT-23 A1 SOT-23 MOSFET P-CHANNEL marking code YW DIODE

    smd code marking 2A sot23

    Abstract: POWER MOSFET P1 smd marking code FMS2301 D 304 x
    Text: Formosa MS SMD MOSFET FMS2301 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2301 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 smd code marking 2A sot23 POWER MOSFET P1 smd marking code FMS2301 D 304 x

    SOT-23

    Abstract: MOSFET 2301 SOT-23 SMD WAG FMS2301 MOSFET 2301 POWER MOSFET P1 smd marking code 2301 marking sot-23
    Text: SMD MOSFET Formosa MS FMS2301 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2301 120sec 260sec 30sec DS-231129 SOT-23 MOSFET 2301 SOT-23 SMD WAG FMS2301 MOSFET 2301 POWER MOSFET P1 smd marking code 2301 marking sot-23

    Mosfet

    Abstract: SSF2301 2301 marking sot-23
    Text: SSF2301 20V P-Channel MOSFET Main Product Characteristics D VDSS -20V RDS on 60mΩ (typ.) ID -3A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2301 OT-23 reliabSSF2301 Mosfet SSF2301 2301 marking sot-23

    IRF6100

    Abstract: 4.5v to 100v input regulator
    Text: PD - 93930E IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V


    Original     		PDF 93930E IRF6100 OT-23 EIA-481 EIA-541. IRF6100 4.5v to 100v input regulator

    2301 SOT-23

    Abstract: 4.5v to 100v input regulator
    Text: PD - 93930D IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V


    Original     		PDF 93930D IRF6100 OT-23 EIA-481 EIA-541. 2301 SOT-23 4.5v to 100v input regulator

    EIA-541

    Abstract: IRF6100 MOSFET 2301 SOT-23 MOSFET 2301 Diode Mark sot23 4x 4.5v to 100v input regulator
    Text: PD - 93930C IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V


    Original     		PDF 93930C IRF6100 OT-23 5M-1994. EIA-541 IRF6100 MOSFET 2301 SOT-23 MOSFET 2301 Diode Mark sot23 4x 4.5v to 100v input regulator

    Untitled

    Abstract: No abstract text available
    Text: PD - 96012A IRF6100PbF HEXFET Power MOSFET l l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free VDSS RDS(on) max ID -20V


    Original     		PDF 6012A IRF6100PbF OT-23 Interna08] EIA-481 EIA-541.

    IRF P-Channel FET 100v

    Abstract: 4.5v to 100v input regulator
    Text: PD - 96012 IRF6100PbF HEXFET Power MOSFET l l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free VDSS RDS(on) max ID -20V


    Original     		PDF IRF6100PbF OT-23 EIA-481 EIA-541. IRF P-Channel FET 100v 4.5v to 100v input regulator

    marking t12 sot-23

    Abstract: EIA-541 IRF6100 4.5v to 100v input regulator
    Text: PD - 93930B IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V


    Original     		PDF 93930B IRF6100 OT-23 5M-1994. marking t12 sot-23 EIA-541 IRF6100 4.5v to 100v input regulator

    spw -079 transformer

    Abstract: samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


    Original     		PDF 1-06A spw -079 transformer samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492

    TL494 car charger schematic diagram

    Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


    Original     		PDF accurat49565 TL494 car charger schematic diagram samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram

    specifications of MOSFET

    Abstract: diode sk
    Text: SK 80 MD 055 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 01## 4 4%  + /- .         + /- ,3 .5 6  9 6 5  + /- ,3 .5 < Values Units -2 /3 667 ,7 /:; 67; 8 8 ! ;3 = > 6-3 . 667 ,7 /:; 67;


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3.4 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V


    Original     		PDF WT-2301 OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3.4 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V


    Original     		PDF WT-2301 OT-23 OT-23

    MOSFET 2301

    Abstract: s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking
    Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS ON R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@VGS =-1.8V


    Original     		PDF WT-2301 OT-23 OT-23 MOSFET 2301 s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking

    2301P

    Abstract: 2301p marking AF2301P
    Text: AF2301P 20V P-Channel Enhancement Mode MOSFET „ Features „ Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package


    Original     		PDF AF2301P OT-23 2301P OT23-3 2301p marking AF2301P

    2301P

    Abstract: AF2301P P-Channel MOSFET code L 1A 2301p marking
    Text: AF2301P 20V P-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package VDS = - 20V


    Original     		PDF AF2301P OT-23 2301P AF2301P P-Channel MOSFET code L 1A 2301p marking

    Mosfet

    Abstract: SSF2301A
    Text: SSF2301A 20V P-Channel MOSFET D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF SSF2301A SSF2301A OT-23 950TYP 550REF Mosfet

    UFN530

    Abstract: UFN533 UFN530 POWER MOSFET UFN532 60N100 S-075
    Text: POWER MOSFET TRANSISTORS UFN530 UFN532 UFN533 100 Volt, 0 .1 8 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF UFN530 UFN532 UFN533 30NV1SIS3H UFN530 UFN531 UFN532 UFN533 UFN530 POWER MOSFET 60N100 S-075

    ufn710

    Abstract: Unitrode DN
    Text: POWER MOSFET TRANSISTORS [j ™ 400 Volt, 3.6 Ohm N-Channel UFN712 UFN713 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF UFN712 UFN713 UFN710 UFN711 UFN712 B61-6540 ufn710 Unitrode DN

    mosfet te 2304

    Abstract: MRF175GU hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory MRF176
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan     		PDF MRF175GV MRF175GU MRF175G MRF176 MRF175GU MRF175GV mosfet te 2304 hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory

    mrf138

    Abstract: ARC-2
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power am plifier applications in industrial, com m ercial and am ateur radio equipment to 175 MHz. • Superior High O rder IMD


    OCR Scan     		PDF MRF138 ARC-2