9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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N mosfet 250v 600A
Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
Text: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?
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QJQ0224005
FS40SM-5
N mosfet 250v 600A
mosfet 600V 100A ST
mosfet 600v
MOSFET Module
mosfet j 114
QJQ0224005
M5 DIODE
mosfet low idss
mosfet 600V 100A
mosfet 600a 600v
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N mosfet 250v 600A
Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
Text: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •
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QJQ0220001
FS40SM-5
N mosfet 250v 600A
mosfet 200A
mosfet 600V 100A
mosfet 600v
"MOSFET Module"
mosfet 100a 600v
3150 mosfet
QJQ0220001
mosfet low idss
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Untitled
Abstract: No abstract text available
Text: 18N25 UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 18A, 250V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 18N25 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.
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18N25
O-220F
18N25
O-263
QW-R502-786
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge
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UF3N25Z
UF3N25Z
O-252
OT-223
O-251
UF3N25ZL-AA3-R
UF3N25ZG-AA3-R
UF3N25ZL-TM3-T
UF3N25ZG-TM3-T
UF3N25ZL-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25 Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC UF3N25 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge
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UF3N25
UF3N25
O-252
OT-223
O-251
UF3N25L-AA3-R
UF3N25G-AA3-R
UF3N25L-TM3-T
UF3N25G-TM3-T
UF3N25L-TN3-R
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SPM6M080-010D
Abstract: SPM6M060-025D 010D
Text: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. E Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M080-010D
SPM6M060-025D
50V/60A
SPM6M080-010D
SPM6M060-025D
010D
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SPM6M080-010D
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. F Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M080-010D
SPM6M060-025D
50V/60A
SPM6M080-010D
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1 DESCRIPTION SOT-223 The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge
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UF3N25Z
OT-223
UF3N25Z
O-252
O-251
UF3N25ZL-AA3-R
UF3N25ZG-AA3-R
UF3N25ZL-TM3-T
UF3N25ZG-TM3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N25Z Preliminary Power MOSFET 3.8A, 250V N-CHANNEL MOSFET DESCRIPTION The UTC 5N25Z is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It
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5N25Z
5N25Z
QW-R502-853
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N25V Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25V is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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12N25V
12N25V
QW-R502-917
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FDD8N50NZ
Abstract: FDD8N50 FDD8N50NZTM
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and
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FDD8N50NZ
FDD8N50NZ
FDD8N50
FDD8N50NZTM
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33n25
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 33N25 Preliminary Power MOSFET 33A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 33N25 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed.
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33N25
33N25
33N25L-T47-T
33N25G-T47-T
QW-R502-814
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di 856
Abstract: di+856
Text: UNISONIC TECHNOLOGIES CO., LTD UF624Z Preliminary Power MOSFET 4.4A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF624Z is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate
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UF624Z
UF624Z
UF624ZL-TN3-T
UF624ZG-TN3-T
UF624ZL-TN3-R
UF624ZG-TN3-R
QW-R502-856
di 856
di+856
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N25 Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N25 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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15N25
15N25
15N25L-TF1-T
15N25G-TF1-T
QW-R502-994
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N25 Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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12N25
12N25
QW-R502-757
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N25-P Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N25-P is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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15N25-P
15N25-P
15N25L-TF1-T
15N25G-TF1-T
15Nat
QW-R502-A24
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N25 Preliminary Power MOSFET 3.8A, 250V LOGIC N-CHANNEL MOSFET DESCRIPTION The UTC 5N25 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It can
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5N25L-TN3-T
QW-R502-852
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Untitled
Abstract: No abstract text available
Text: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching
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FDB15N50
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SMD1P
Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
Text: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91552B
IRFN440
JANTX2N7222U
JANTXV2N7222U
MIL-PRF-19500/596]
SMD1P
2N7222U
IRFN440
JANTX2N7222U
JANTXV2N7222U
irfn44
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fdd7n25
Abstract: fdd7n25lz
Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD7N25LZ
FDD7N25LZ
fdd7n25
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IRFM460
Abstract: No abstract text available
Text: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90727B
O-254AA)
IRFM460
O-254AA.
MIL-PRF-19500
IRFM460
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Untitled
Abstract: No abstract text available
Text: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90727B
O-254AA)
IRFM460
O-254AA.
MIL-PRF-19500
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MOSFET Modules
Abstract: 2MI100F-025 "MOSFET Modules" 2MI50S-050 2M150F-050 2MI100F-050 2MI50F-050 M210 2MI100F
Text: COLLMER SEMICONDUCTOR INC 34E I> 2 2 3 â 7 cia GG01553 T ' 3 ^ BICOL - i 5 FUJI MOSFET M odules 250V 500V MOSFET Module advantages: • Increase carrier frequencies • Improve control accuracy MOSFET Modules are used on: • Switch-mode power supplies SMPS
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OCR Scan
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20kHz)
120VAC
240VAC
20kHz
25-35kg
MOSFET Modules
2MI100F-025
"MOSFET Modules"
2MI50S-050
2M150F-050
2MI100F-050
2MI50F-050
M210
2MI100F
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