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    MOSFET 3055 Search Results

    MOSFET 3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


    Original     		PDF AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS

    HIP4080 amplifier circuit diagram class D

    Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
    Text: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 HIP4080 amplifier circuit diagram class D class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A

    class d amplifier schematic hip4080

    Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
    Text: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 class d amplifier schematic hip4080 HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V MO-169AB

    class d amplifier schematic hip4080

    Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
    Text: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 1-800-4-HARRIS class d amplifier schematic hip4080 hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S mosfet L 3055 high power fet audio amplifier schematic

    3055V

    Abstract: paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v
    Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055V r14525 MTD3055V/D 3055V paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v

    Untitled

    Abstract: No abstract text available
    Text: FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDMS86150

    3055V

    Abstract: MTD3055VT4 MTD3055V 369D AN569
    Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055V MTD3055V/D 3055V MTD3055VT4 MTD3055V 369D AN569

    t3055vl

    Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
    Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055VL r14525 MTD3055VL/D t3055vl T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4

    MTD3055V

    Abstract: mosfet DPAK
    Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055V MTD3055V/D MTD3055V mosfet DPAK

    3055L transistor

    Abstract: Mosfet Sot223
    Text: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,


    Original     		PDF RFT3055LE TA49158. RFT3055LE OT-223 330mm EIA-481 3055L transistor Mosfet Sot223

    t3055vl

    Abstract: 3055VL T30-55VL 418B-03 5M MARKING CODE DIODE SMC MTD3055VLT4
    Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055VL t3055vl 3055VL T30-55VL 418B-03 5M MARKING CODE DIODE SMC MTD3055VLT4

    3055VL

    Abstract: MTD3055VLT4 MTD3055VL
    Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK−3 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTD3055VL MTD3055VL/D 3055VL MTD3055VLT4 MTD3055VL

    Untitled

    Abstract: No abstract text available
    Text: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86150 FDMS86150

    mosfet L 3055

    Abstract: No abstract text available
    Text: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86150 FDMS86150 mosfet L 3055

    3055L

    Abstract: 3055LD spice model dc motor AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 6428 n-channel
    Text: RFT3055LE Data Sheet January 2002 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET Features • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    Original     		PDF RFT3055LE 3055L 3055LD spice model dc motor AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 6428 n-channel

    Untitled

    Abstract: No abstract text available
    Text: MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source


    Original     		PDF MMFT3055E OT-223 OT-223 MMFT3055E/D

    MMFT3055E

    Abstract: 2N3904 AN569 MMFT3055ET1 MMFT3055ET3
    Text: MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source


    Original     		PDF MMFT3055E OT-223 OT-223 MMFT3055E/D MMFT3055E 2N3904 AN569 MMFT3055ET1 MMFT3055ET3

    3055l

    Abstract: 3055LD AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 TA49158
    Text: RFT3055LE Data Sheet Title FT3 5LE bt 0A, V, 50 m, 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET Features This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    Original     		PDF RFT3055LE TA49158. TB334, 3055l 3055LD AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 TA49158

    3055e

    Abstract: RK3055E
    Text: RK3055E Transistors 10V Drive Nch MOSFET RK3055E zStructure Silicon N-channel MOSFET zDimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.75 (1) (2)Drain 0.8Min. 0.65 0.9 (1)Gate 9.5 2.5 0.9 1.5 5.5 1.5 zFeatures 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area).


    Original     		PDF RK3055E 3055E 3055e RK3055E

    3055L

    Abstract: f 3055l sot89 Marking mosfet fr5 sot89 FHK3055L sot89 17
    Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK3055L N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻 Rugged and reliable. 高可靠性


    Original     		PDF FHK3055L OT-89 3055L f 3055l sot89 Marking mosfet fr5 sot89 FHK3055L sot89 17

    Untitled

    Abstract: No abstract text available
    Text: BSP17/3055 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V) I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)


    Original     		PDF BSP17/3055

    CHM3055LXGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM3055LXGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE


    Original     		PDF CHM3055LXGP SC-62/SOT-89 250uA CHM3055LXGP

    3055L

    Abstract: TA49158
    Text: integrai RFT3055LE D ata S hee t 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those ot LSI circuits, gives


    OCR Scan     		PDF RFT3055LE TA49158. RFT3055LE AN7254 AN7260. 3055L TA49158

    FT3055LE

    Abstract: No abstract text available
    Text: RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET July 1998 Features Description • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFT3055LE 0-150i2 OT-223 330mm FT3055LE