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    MOSFET 30A Search Results

    MOSFET 30A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 30A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    BUZ11

    Abstract: buz11 application note BUZ1 TB334 TA9771
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		BUZ11 O220AB BUZ11 buz11 application note BUZ1 TB334 TA9771 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		BUZ11 O220AB PDF

    UTT30N08

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30N08 Power MOSFET 80V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT30N08 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum


    Original     		UTT30N08 UTT30N08 QW-R502-732 PDF

    MOSFET 1000v 30a

    Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
    Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    Original     		OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 OM9027SP1 OM90Surge 300msec, MOSFET 1000v 30a 10A, 100v fast recovery diode OM9029SP1 OM9030SP1 diode 1000V 10a PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30N05 Power MOSFET 30A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR „ DESCRIPTION The UTC UTT30N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current


    Original     		UTT30N05 UTT30N05 UTT30N05L-TN3-R UTT30N05G-TN3-R QW-R502-660 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30N08 Power MOSFET 80V, 30A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N08 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		UTT30N08 UTT30N08 O-252 QW-R502-732 PDF

    30N06L-TA3-T

    Abstract: 30N06 mosfet to-220f 60v
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06 O-252 30N06 O-220 O-220F QW-R502-087 30N06L-TA3-T mosfet to-220f 60v PDF

    UTT30N06L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		UTT30N06 UTT30N06 QW-R502-637 UTT30N06L PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		UTT30N06 UTT30N06 QW-R502-637 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTN6266 Preliminary Power MOSFET 30A, 60V N-CHANNEL TRENCH MOSFET  DESCRIPTION The UTC UTN6266 is an N-Channel trench mosfet, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge.


    Original     		UTN6266 UTN6266 UTN6266G-S08-R UTN6266G-K08-5060-R QW-R502-B28 PDF

    utt30n10

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30N10 Power MOSFET 30A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N10 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed.


    Original     		UTT30N10 UTT30N10 UTT30N10L-TA3-T UTT30N10G-TA3-T UTT30N10L-TN3-T UTT30N10G-TN3-T UTT30N10L-TN3-R UTT30N10G-TN3-R QW-R502-661 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30N10 Power MOSFET 30A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N10 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed.


    Original     		UTT30N10 UTT30N10 UTT30N10L-TA3-T UTT30N10G-TA3-T QW-R502-661 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30N10 Power MOSFET 30A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT30N10 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed.


    Original     		UTT30N10 UTT30N10 UTT30N10L-TA3-T UTT30N10G-TA3-T UTT30N10L-TN3-T UTT30N10G-TN3-T UTT30N10L-TN3-R UTT30N10G-TN3at QW-R502-661 PDF

    TH 2190 mosfet

    Abstract: UTT30P06
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P06 Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high


    Original     		UTT30P06 UTT30P06 O-220 UTT30P06L-TA3-T UTT30P06G-TA3-T QW-R502-622 TH 2190 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06V-Q 30N06V-Q 30N06VL-TM3-T 30N06VG-TM3-T O-251 QW-R502-A29. PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P06 Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high


    Original     		UTT30P06 UTT30P06 UTT30P06L-TA3-T UTT30P06G-TA3-T QW-R502-622 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 TO-252 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06 O-252 30N06 O-220 O-22at QW-R502-087 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 60V, 30A N-CHANNEL POWER MOSFET Power MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06 O-220F O-220 30N06 QW-R502-087 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06-Q 60V, 30A N-CHANNEL POWER MOSFET Power MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		30N06-Q O-220F O-220 30N06-Q QW-R502-979. PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 30A 450 500V 1 PD4M441L P2H4M441L PD4M440L


    Original     		PD4M441L P2H4M441L PD4M440L PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 30A 450 500V 1 PD4M441H P2H4M441H PD4M440H


    Original     		PD4M441H P2H4M441H PD4M440H PDF

    Untitled

    Abstract: No abstract text available
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    OCR Scan     		OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec, PDF

    4134 mosfet

    Abstract: Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET
    Text: Jn tefsil N-Channel Standard Gate Power MOSFETs 4 Power MOSFET Products PAGE N-Channel Test Circuits and W aveform s. 4-3 BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET.


    OCR Scan     		BUZ11 BUZ71 BUZ71A BUZ72A HRFZ44N HUF75307P3, HUF75307D3, HUF75307D3S HUF75309P3, HUF75309D3, 4134 mosfet Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET PDF