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    MOSFET 333 Search Results

    MOSFET 333 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 333 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN799 Matching MOSFET Drivers to MOSFETs

    Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
    Text: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of


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    AN799 TC4424 D-81739 DS00799A* DS00799A-page AN799 Matching MOSFET Drivers to MOSFETs an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP15N40 N-Channel UniFETTM MOSFET 400 V, 15 A, 300 mΩ Features Description • RDS on = 240 mΩ (Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


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    FDP15N40 PDF

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


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    AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS PDF

    P65 MOSFET

    Abstract: IRF7353D2
    Text: PD- 93809 IRF7353D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint


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    IRF7353D2 7353d2 P65 MOSFET IRF7353D2 PDF

    Matching MOSFET Drivers to MOSFETs

    Abstract: POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3
    Text: AN799 Matching MOSFET Drivers to MOSFETs Author: Jamie Dunn Microchip Technology Inc. 2. Power dissipation due to quiescent current draw of the MOSFET driver. EQUATION 2: INTRODUCTION There are many MOSFET technologies and silicon processes in existence today, with new advances being


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    AN799 r4-7200 D-85737 NL-5152 DS00799B-page Matching MOSFET Drivers to MOSFETs POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3 PDF

    AAT4250

    Abstract: AAT4280 AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 AAT4280IGU-3
    Text: AAT4280 Slew Rate Controlled Load Switch General Description Features The AAT4280 SmartSwitch is a member of AATI's Application Specific Power MOSFET™ ASPM™ product family. The AAT4280 is a P-channel MOSFET power switch designed for high-side loadswitching applications. The P-channel MOSFET


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    AAT4280 AAT4280 AAT4250 SC70JW-8 AAT4280IJS-3-T1 OT23-6 AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 AAT4280IGU-3 PDF

    f 948

    Abstract: TOP 948 f948
    Text: FC-36A 5.5 x 5 mm MOSFET BGA Tape and Reel Dimensions FC-36A MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: Antistatic Cover Tape FC-36A MOSFET BGA parts are shipped in tape. The carrier tape is made from a dissipative carbon filled


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    FC-36A F63TNR 330cm f 948 TOP 948 f948 PDF

    SOT23-6 MARKING 310

    Abstract: AAT4280IGU-1-T1 AAT4280IGu AAT4250 AAT4280 AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 aat4280ijs-3-t1
    Text: AAT4280 Slew Rate Controlled Load Switch General Description Features The AAT4280 SmartSwitch is a member of AATI's Application Specific Power MOSFET™ ASPM™ product family. The AAT4280 is a P-channel MOSFET power switch designed for high-side loadswitching applications. The P-channel MOSFET


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    AAT4280 AAT4280 AAT4250 SC70JW-8 048REF SOT23-6 MARKING 310 AAT4280IGU-1-T1 AAT4280IGu AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 aat4280ijs-3-t1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP15N40 N-Channel UniFETTM MOSFET 400 V, 15 A, 300 m Features Description • RDS on = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


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    FDP15N40 FDP15N40 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N40 Preliminary Power MOSFET 15A, 400V N-CHANNEL POWER MOSFET 1 „ The UTC 15N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and


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    15N40 O-220 15N40 O-220F1 QW-R502-633 PDF

    15N40

    Abstract: 65mH
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N40 Preliminary Power MOSFET 15A, 400V N-CHANNEL POWER MOSFET 1 „ The UTC 15N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and


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    15N40 O-220 15N40 O-220F1 QW-R502-633 65mH PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N50 Power MOSFET 15A, 500V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 15N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and


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    15N50 15N50 O-220F1 O-220F2 QW-R502-788 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N50 Power MOSFET 15A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and


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    15N50 15N50 O-220F2 15N50at QW-R502-788 PDF

    irf 44 n

    Abstract: IRF7413
    Text: PD - 91330D IRF7413 PROVISIONAL HEXFET Power MOSFET Advanced Power MOSFET Technology Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D G


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    91330D IRF7413 characteristi310) irf 44 n IRF7413 PDF

    IRf 48 MOSFET

    Abstract: N CHANNEL 250A SINGLE PHASE POWER MOSFET 9936 mosfet P 838 X MOSFET DATA SHEET MOSFET SO-8 IRF7413 power mosfet so8 FL 91330
    Text: PD - 91330E IRF7413 HEXFET Power MOSFET Advanced Power MOSFET Technology Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V


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    91330E IRF7413 multiple-310) IRf 48 MOSFET N CHANNEL 250A SINGLE PHASE POWER MOSFET 9936 mosfet P 838 X MOSFET DATA SHEET MOSFET SO-8 IRF7413 power mosfet so8 FL 91330 PDF

    6680a

    Abstract: F011 F63TNR F852 FDS6680A L86Z SOIC-16
    Text: October 2001 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


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    FDS6680A OT-23 6680a F011 F63TNR F852 FDS6680A L86Z SOIC-16 PDF

    SKHI 65

    Abstract: semikron IGBT semikron SKHI 64 SEMIKRON SKHI 65 SKHI 64 Semikron Skai 2 skm200gb123d igbt driver SKHI 23/12 semikron SKHI 21 semikron ASIC SKIC
    Text: ✓ plug + play ✓ vollständiger Schutz ✓ 4kV Isolationsspannung ✓ einfache Anwenderschnittstelle ✓ DC-DC-Wandler integriert IGBT und MOSFET SKHI - Treiber Integrierte Komponenten und Integrierte Lösungen SEMIKRON - IGBT/MOSFET Ansteuerungen SKHI


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    D-90253 SKHI 65 semikron IGBT semikron SKHI 64 SEMIKRON SKHI 65 SKHI 64 Semikron Skai 2 skm200gb123d igbt driver SKHI 23/12 semikron SKHI 21 semikron ASIC SKIC PDF

    d marking code dpak transistor

    Abstract: d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD3580 FDD6680 FDU3580
    Text: FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    FDD3580/FDU3580 O-25opment. d marking code dpak transistor d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD3580 FDD6680 FDU3580 PDF

    Untitled

    Abstract: No abstract text available
    Text: 333 -8 PSMN014-60LS DF N3 N-channel DFN3333-8 60 V 14 mΩ standard level MOSFET Rev. 3 — 8 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications


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    PSMN014-60LS DFN3333-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: 333 -8 PSMN013-30LL DF N3 N-channel DFN3333-8 30 V 13 mΩ logic level MOSFET Rev. 5 — 8 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power


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    PSMN013-30LL DFN3333-8 PDF

    EH 002

    Abstract: No abstract text available
    Text: 333 -8 PSMN3R5-30LL DF N3 N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET Rev. 4 — 12 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power


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    PSMN3R5-30LL DFN3333-8 EH 002 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.


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    FDW2508P PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    FDD3580/FDU3580 PDF

    IOR9246

    Abstract: No abstract text available
    Text: PD 9.1608C International IQ R Rectifier IRL3103D1 FETKY MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application


    OCR Scan
    1608C IRL3103D1 IOR9246 PDF