APT9301
Abstract: 30 volts boost converters APT30D60B mosfet 350v 30a
Text: APPLICATION NOTE APT9301 By: Ken Dierberger NEW ULTRAFAST RECOVERY DIODE TECHNOLOGY IMPROVES PERFORMANCE OF HIGH FREQUENCY POWER CIRCUITS Presented at HFPC ‘93 USA Presents a comparison between APT’s new FRED and two competitor’s devices NEW ULTRAFAST RECOVERY DIODE TECHNOLOGY IMPROVES
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APT9301
APT30D60B
APT30D60B
APT9301
30 volts boost converters
mosfet 350v 30a
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SHDCG224802
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. - Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • Isolated Hermetic Metal Package • Low RDS on ; Low Effective Capacitance • Ultra Low Gate Charge; very high dv/dt ratings
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SHD224802
SHDCG224802
SHDCG224802)
ID100
SHDCG224802
O-258
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SHDCG224802
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • • • • Isolated Hermetic Metal Package Low RDS on ; Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings
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SHD224802
SHDCG224802
SHDCG224802)
ID100
SHDCG224802
O-258
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SHD224802
Abstract: SHDCG224802 ID100
Text: SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • • • • Isolated Hermetic Metal Package Low RDS on ; Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings
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SHD224802
SHDCG224802
SHDCG224802)
ID100
SHD224802
SHDCG224802
ID100
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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tf 115 250v 15a
Abstract: No abstract text available
Text: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M75JLLU2
E145592
tf 115 250v 15a
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Untitled
Abstract: No abstract text available
Text: APT5010JVRU3 44A 0.100Ω 500V POWER MOS V A S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5010JVRU3
OT-227
E145592
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APT5010JLLU3
Abstract: No abstract text available
Text: APT5010JLLU3 500V 44A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT5010JLLU3
E145592
APT5010JLLU3
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apt5010
Abstract: No abstract text available
Text: APT5010JVRU2 44A 0.100Ω 500V POWER MOS V K S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5010JVRU2
OT-227
E145592
apt5010
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APT5010JLL
Abstract: APT5010JLLU2 0830A
Text: APT5010JLLU2 500V 44A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT5010JLLU2
E145592
APT5010JLL
APT5010JLLU2
0830A
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100pf,63v ceramic capacitor
Abstract: 75 LS 541 100pf,63v BCX17 BCX19 IMAT5011 250v capacitor 4011 pinout
Text: IMAT5011 500V 30A INTELLIGENT HALF BRIDGE POWER MOSFET MODULE PRODUCT DESCRIPTION The IMAT5011 is an isolated power MOSFET module with 2 switches connected in a half bridge configuration, with associated drivers, protections and isolation circuits. Each switch is connected with series and antiparallel fast recovery “soft” FREDs in order to inhibit the
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IMAT5011
100KHz.
board00
F-33700
6160xx1T2300
100pf,63v ceramic capacitor
75 LS 541
100pf,63v
BCX17
BCX19
250v capacitor
4011 pinout
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bridge rectifier single phase 240V AC
Abstract: 220v 100a diode bridge mosfet 3kw PFC 3kw 3kw mosfet 3kw pfc bridge rectifier 240V AC TRANSISTOR 3kw 220v 25a diode bridge bridge rectifier 240V AC 240v dc
Text: LMH5010RB 500V 35A APPLICATION SPECIFIC POWER MODULE FOR 3KW CONVERTER PRODUCT DESCRIPTION The LMH5010RB is an Application Specific Power Module ASPM that integrates all the necessary power functions to build a converter, up to 3KW, with a 220/240V AC input. System design time is dramatically
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LMH5010RB
220/240V
100KHz
6160xx1T2300
F-33700
bridge rectifier single phase 240V AC
220v 100a diode bridge
mosfet 3kw
PFC 3kw
3kw mosfet
3kw pfc
bridge rectifier 240V AC
TRANSISTOR 3kw
220v 25a diode bridge
bridge rectifier 240V AC 240v dc
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Untitled
Abstract: No abstract text available
Text: MQFL-270L-05S Single Output H igH R eliability DC-DC C onveRteR 65-475V 5V 15A 81% @ 7.5A /86% @ 15A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 65-350V F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-270L-05S
5-475V
5-350V
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Untitled
Abstract: No abstract text available
Text: MQFL-270L-05S Single Output H igH R eliability DC-DC C onveRteR 65-475V 5V 15A 81% @ 7.5A /86% @ 15A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 65-350V F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters
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MQFL-270L-05S
5-475V
5-350V
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Aromat relay lr42758
Abstract: lr26550 LR42758 Aromat lr26550 LR68004 Aromat lr44444 Aromat lr26550 datasheet lr44444 Aromat lR44444 relays E43149
Text: Panasonic Electric Works Corp. of America 629 Central Avenue, New Providence, NJ 07974-1526 Tel: 908 464-3550 Standards Chart Standards Chart Mechanical Relays Item SX (ASX) UL/C-UL (Recognized) CSA (Certified) File No. Contact rating File No. Contact rating
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LR26550
E43149
E43149
Aromat relay lr42758
lr26550
LR42758
Aromat lr26550
LR68004
Aromat lr44444
Aromat lr26550 datasheet
lr44444
Aromat lR44444 relays
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85N60C
Abstract: UPS SIEMENS E72873 ID100
Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 94 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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85N60C
O-264
E72873
ID100
20080523a
85N60C
UPS SIEMENS
E72873
ID100
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mosfet 350v 30a
Abstract: No abstract text available
Text: APT5010JVRU2 A D VA N C ED P o w er Te c h n o lo g y ' soov 44A 0.100a POWER MOSV Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5010JVRU2
OT-227
APT5010JVRU2
OT-227
mosfet 350v 30a
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Untitled
Abstract: No abstract text available
Text: APT5010JVRU3 A dvanced P o w er Te c h n o l o g y 500V 44A 0.100n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5010JVRU3
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: APT5010JVRU2 A dvanced P o w er Te c h n o l o g y 500V 44A 0.100Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5010JVRU2
OT-227
OT-227
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5012JN
Abstract: APT5012JNU3 APTS012JNU3 APT5012
Text: A dvanced P o w er Te c h n o l o g y O D O A rm m m APT5012JNU3 ISOTOP* 500V 43A 0.12£i Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratinnc- T
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APT5012JNU3
5012JNU3
OT-227
00DlbÃ
5012JN
APTS012JNU3
APT5012
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APT5012JNU2
Abstract: ST-200 transformer DIODE BAT 17
Text: A d van ced R o w er Te c h n o l o g y APT5012JNU2 ISOTOP® 500V 43A 0.120 Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" P O W E R M O S IV ‘ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm 1V m
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APT5012JNU2
5012JNU2
OT-227
ST-200 transformer
DIODE BAT 17
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SM25N
Abstract: ssm25n40
Text: SAMSUNG S E M I C ON DU CT OR INC . ‘ S S m I^ ^ Tfi’ DE | 7Tb414H DOOSBTB 4 ^ ^ ^ m ^N -C H A N N È L:^^ SSH25N35/25N40 POWER MOSFETS Preliminary Specifications 5 . PRODUCT SUMMARY 400 Volt, 0.25 Ohm SFET Part Number R D S on Id 350V ' 0.25 25A SSM25N40
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7Tb414H
SSH25N35/25N40
SSM25N35
SSM25N40
SSH25N35
SSH25N40
SSM25N35/25N40
SM25N
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Untitled
Abstract: No abstract text available
Text: ADVANCED PO W ER Te c h n o l o g y APT5010JVRU3 500V 44A 0.100Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5010JVRU3
OT-227
E145592
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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