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    MOSFET 40P03GH Search Results

    MOSFET 40P03GH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 40P03GH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Mosfet 40P03GH

    Abstract: 40P03G
    Text: AP40P03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -30V RDS ON 28mΩ ID G ▼ RoHS Compliant BVDSS -30A S Description


    Original     		AP40P03GH/J-HF O-252 AP40P03GJ) O-251 O-251 40P03GJ Mosfet 40P03GH 40P03G PDF

    40p03gj

    Abstract: 40p03gh
    Text: AP40P03GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D BVDSS -30V RDS ON Simple Drive Requirement Fast Switching Characteristic 28m ID G -30A S Description G The TO-252 package is widely preferred for all commercial-industrial


    Original     		AP40P03GH/J O-252 AP40P03GJ) O-251 O-251 40P03GJ 40p03gj 40p03gh PDF

    Mosfet 40P03GH

    Abstract: 40p03gj 40p03gh 40p03 40P03G AP40P03GJ AP40P03
    Text: AP40P03GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -30V RDS ON 28mΩ ID G -30A S Description G The TO-252 package is widely preferred for all commercial-industrial


    Original     		AP40P03GH/J O-252 AP40P03GJ) O-251 O-251 40P03GJ Mosfet 40P03GH 40p03gj 40p03gh 40p03 40P03G AP40P03GJ AP40P03 PDF