AN569
Abstract: MTW7N80E
Text: MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW7N80E
O-247
r14525
MTW7N80E/D
AN569
MTW7N80E
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AN569
Abstract: MTW7N80E
Text: MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW7N80E
r14525
MTW7N80E/D
AN569
MTW7N80E
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Untitled
Abstract: No abstract text available
Text: 0.9V Drive Nch MOSFET RYE002N05 Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ Application Switching
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RYE002N05
SC-75A)
OT-416>
R1120A
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RUE002N05
Abstract: SC-75A
Text: 1.2V Drive Nch MOSFET RUE002N05 Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH Application
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RUE002N05
SC-75A)
OT-416>
R1010A
RUE002N05
SC-75A
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Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch MOSFET RUE002N05 Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH Application
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RUE002N05
SC-75A)
OT-416>
R1010A
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RYE002N05
Abstract: SC-75A
Text: 0.9V Drive Nch MOSFET RYE002N05 Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ Application
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RYE002N05
SC-75A)
OT-416>
R1010A
RYE002N05
SC-75A
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Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch MOSFET RUE002N05 Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH Application
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RUE002N05
SC-75A)
OT-416>
R1010A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N65 Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N65
20N65
QW-R502-731
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Untitled
Abstract: No abstract text available
Text: 0.9V Drive Nch MOSFET RYE002N05 z Structure Silicon N-channel MOSFET z Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> zFeatures 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ z Application Switching
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RYE002N05
SC-75A)
OT-416>
RYE002N05
R1120A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
QW-R502-587
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 022A, 600V N-CHANNEL POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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22N60
22N60
22N60L-T47-T
22N60G-T47-T
22N60L-T3P-T
22N60G-T3P-T
22N60L-at
QW-R502-216
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 022A, 600V N-CHANNEL POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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22N60
22N60
22N60L-T47-T
22N60G-T47-T
22N60L-T3P-T
22Nat
QW-R502-216
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N10 Power MOSFET 80A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N10 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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UTT80N10
UTT80N10
UTT80N10L-TA3-T
UTT80N10G-TA3-T
QW-R502-712
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Untitled
Abstract: No abstract text available
Text: N-Channel SuperFET II MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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IRFM360
Abstract: SHD225615
Text: SENSITRON SEMICONDUCTOR SHD225615 TECHNICAL DATA DATA SHEET 4167, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, .20 Ohm, 23A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Similar to IRFM360 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
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SHD225615
IRFM360
250mA
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SHD225615
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225615 TECHNICAL DATA DATA SHEET 4167, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, .20 Ohm, 23A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Similar to IRFM360 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
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SHD225615
IRFM360
O-254
O-254
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PHILIPS MOSFET MARKING
Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET
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M3D088
BF1107
SCA59
115102/00/01/pp8
PHILIPS MOSFET MARKING
passive loopthrough
n channel depletion MOSFET
mosfet 5130
Q 817
mosfet K 2865
115102
4466 8 pin mosfet pin voltage
marking code 10 sot23
BF1107
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us 945 mosfet
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies
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MRF9030M/D
MRF9030MR1
us 945 mosfet
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mosfet K 2865
Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET
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M3D088
BF1107
BF1107
SCA60
115102/00/02/pp8
mosfet K 2865
PHILIPS RF MOSFET depletion MARKING
PHILIPS MOSFET MARKING
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Infineon technology roadmap for mosfet
Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial
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KMZ60
KMA210
KMA215
Infineon technology roadmap for mosfet
LFPAK88
Acbel schematic diagram switching power supply
BLDC TRW
schematic diagram inverter air conditioner
schematic diagram for split air conditioner
TRIAC 20A 600V
inverter schematic ims 1600
triac 4A, 600V, 5mA
triac 0,8A, 600V, 5mA
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MRF5S9070NR
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with
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MRF5S9070NR1/D
MRF5S9070NR1
MRF5S9070NR
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TRANSISTOR ww1
Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY
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BLF548
AN98021
BLF548
SCA57
TRANSISTOR ww1
mosfet handbook
trimmer 2-18 pf
ww1 45 transistor
trafo toroidal
AN98021
KDI-PPT820-75-3
4814 mosfet chip
philips catalog potentiometer 2322 350
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
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4134 mosfet
Abstract: Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET
Text: Jn tefsil N-Channel Standard Gate Power MOSFETs 4 Power MOSFET Products PAGE N-Channel Test Circuits and W aveform s. 4-3 BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET.
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BUZ11
BUZ71
BUZ71A
BUZ72A
HRFZ44N
HUF75307P3,
HUF75307D3,
HUF75307D3S
HUF75309P3,
HUF75309D3,
4134 mosfet
Power MOSFET 50V 20A
mosfets
MOSFET 200v 20A n.channel
POWER MOSFET
Power MOSFETs
MOSFET 50V 100A
mosfet HRF3205
Mosfet 100V 50A
N_CHANNEL MOSFET 100V MOSFET
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