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    MOSFET 45A 200V Search Results

    MOSFET 45A 200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK2017DPP-M0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 200V 45A 47Mohm To-220Fl Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 45A 200V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50NF25

    Abstract: mosfet 45a 200v JESD97 STB50NF25 STP50NF25
    Text: STB50NF25 STP50NF25 N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 Low gate charge STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID Pw STP50NF25 250V <0.069Ω 45A 160W STB50NF25 250V <0.069Ω 45A 160W • 100% avalanche tested ■


    Original     		PDF STB50NF25 STP50NF25 O-220 50NF25 mosfet 45a 200v JESD97 STB50NF25 STP50NF25

    IRHMS63260

    Abstract: IRHMS64260 IRHMS67260 IRHMS68260
    Text: PD - 94667A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 300K Rads (Si) 0.029Ω 45A* IRHMS64260


    Original     		PDF 4667A O-254AA) IRHMS67260 IRHMS67260 IRHMS63260 IRHMS64260 IRHMS68260 1000K 90MeV/ O-254AA. IRHMS63260 IRHMS64260

    IRHMS63260

    Abstract: IRHMS64260 IRHMS67260 IRHMS68260 10v regulator 7910 10v regulator 7910 c
    Text: PD - 94667 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 300K Rads (Si) 0.029Ω 45A* IRHMS64260


    Original     		PDF O-254AA) IRHMS67260 IRHMS67260 IRHMS63260 IRHMS64260 IRHMS68260 1000K 90MeV/ O-254AA. MIL-PRF-19500 IRHMS63260 IRHMS64260 10v regulator 7910 10v regulator 7910 c

    IRHMS63260

    Abstract: IRHMS64260 IRHMS67260 IRHMS68260
    Text: PD - 94667B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 300K Rads (Si) 0.029Ω 45A* IRHMS64260


    Original     		PDF 94667B O-254AA) IRHMS67260 IRHMS67260 IRHMS63260 IRHMS64260 IRHMS68260 1000K 90MeV/ O-254AA. IRHMS63260 IRHMS64260

    IRHMS67260

    Abstract: 2n7584 2N7584T1
    Text: PD-94667F RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) Low-Ohmic


    Original     		PDF PD-94667F O-254AA) 2N7584T1 IRHMS67260 IRHMS67260 IRHMS63260 O-254AA 90MeV/ applicat254AA. MIL-PRF-19500 2n7584 2N7584T1

    2N7584T1

    Abstract: 2n7584 PD-94667D IRHMS67260
    Text: PD-94667D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		PDF PD-94667D O-254AA) IRHMS67260 IRHMS63260 2N7584T1 90MeV/ O-254AA. MIL-PRF-19500 2n7584 PD-94667D

    rcj450

    Abstract: No abstract text available
    Text: RCJ450N20 Nch 200V 45A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 55mW ID 45A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.


    Original     		PDF RCJ450N20 SC-83) R1102A rcj450

    2n7584

    Abstract: No abstract text available
    Text: PD-94667E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		PDF PD-94667E O-254AA) 2N7584T1 IRHMS67260 IRHMS67260 IRHMS63260 90MeV/ c254AA. MIL-PRF-19500 2n7584

    Untitled

    Abstract: No abstract text available
    Text: PD-94667D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		PDF PD-94667D O-254AA) 2N7584T1 IRHMS67260 IRHMS67260 IRHMS63260 90MeV/ O-254AA. MIL-PRF-19500

    PD-94667C

    Abstract: IRHMS67260 IRF P CHANNEL MOSFET 200V 20A IRHMS63260 ISD45A
    Text: PD-94667C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		PDF PD-94667C O-254AA) IRHMS67260 IRHMS67260 IRHMS63260 90MeV/ O-254AA. MIL-PRF-19500 PD-94667C IRF P CHANNEL MOSFET 200V 20A IRHMS63260 ISD45A

    2N7586

    Abstract: No abstract text available
    Text: PD-96991B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7586T1 IRHMS67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67264 100K Rads (Si) RDS(on) 0.041Ω ID 45A* IRHMS63264 0.041Ω 45A* 300K Rads (Si) Low-Ohmic


    Original     		PDF PD-96991B O-254AA) 2N7586T1 IRHMS67264 IRHMS67264 IRHMS63264 O-254AA 90MeV/ applicat254AA. MIL-PRF-19500 2N7586

    Untitled

    Abstract: No abstract text available
    Text: RCX450N20 Nch 200V 45A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 55mW ID 45A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy.


    Original     		PDF RCX450N20 O-220FM R1102A

    2N7586

    Abstract: 2N7586T1 IRHMS67264 Technology International
    Text: PD-96991A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7586T1 IRHMS67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67264 100K Rads (Si) RDS(on) 0.041Ω ID 45A* IRHMS63264 0.041Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		PDF PD-96991A O-254AA) IRHMS67264 IRHMS63264 2N7586T1 90MeV/ O-254AA. MIL-PRF-19500 2N7586 Technology International

    Untitled

    Abstract: No abstract text available
    Text: PD-96991A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7586T1 IRHMS67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67264 100K Rads (Si) RDS(on) 0.041Ω ID 45A* IRHMS63264 0.041Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		PDF PD-96991A O-254AA) 2N7586T1 IRHMS67264 IRHMS67264 IRHMS63264 90MeV/ O-254AA. MIL-PRF-19500

    IRHMB57260SE

    Abstract: No abstract text available
    Text: PD-96971 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMB57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides


    Original     		PDF PD-96971 O-254AA) IRHMB57260SE O-254AA O-254AA. MIL-PRF-19500 IRHMB57260SE

    Untitled

    Abstract: No abstract text available
    Text: PD-96971 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMB57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides


    Original     		PDF PD-96971 O-254AA) IRHMB57260SE O-254AA O-254AA. MIL-PRF-19500

    IRHMK57260SE

    Abstract: No abstract text available
    Text: PD-96915 RADIATION HARDENED IRHMK57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY ™ Product Summary Part Number IRHMK57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5 TM technology provides


    Original     		PDF PD-96915 IRHMK57260SE O-254AA) O-254AA MIL-PRF-19500 IRHMK57260SE

    IRHNA57264SE

    Abstract: JANSR2N7474U2
    Text: PD-93816E IRHNA57264SE JANSR2N7474U2 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57264SE Radiation Level 100K Rads (Si) RDS(on) 0.06Ω ID 45A QPL Part Number


    Original     		PDF PD-93816E IRHNA57264SE JANSR2N7474U2 MIL-PRF-19500/684 MIL-STD-750, MlL-STD-750, IRHNA57264SE JANSR2N7474U2

    Untitled

    Abstract: No abstract text available
    Text: PD-93816E IRHNA57264SE JANSR2N7474U2 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57264SE Radiation Level 100K Rads (Si) RDS(on) 0.06Ω ID 45A QPL Part Number


    Original     		PDF PD-93816E IRHNA57264SE JANSR2N7474U2 MIL-PRF-19500/684 MIL-STD-750, MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: PD-96915 RADIATION HARDENED IRHMK57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY ™ Product Summary Part Number IRHMK57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5 TM technology provides


    Original     		PDF PD-96915 IRHMK57260SE O-254AA) O-254AA MIL-PRF-19500

    IRHNA57264SE

    Abstract: JANSR2N7474U2
    Text: PD-93816D IRHNA57264SE JANSR2N7474U2 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57264SE Radiation Level 100K Rads (Si) RDS(on) 0.06Ω ID QPL Part Number 45A JANSR2N7474U2


    Original     		PDF PD-93816D IRHNA57264SE JANSR2N7474U2 MIL-PRF-19500/684 MIL-STD-750, MlL-STD-750, IRHNA57264SE JANSR2N7474U2

    MIC4452

    Abstract: APT45M100J
    Text: APT45M100J 1000V, 45A, 0.18Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT45M100J E145592 MIC4452 APT45M100J

    Untitled

    Abstract: No abstract text available
    Text: APT45M100J 1000V, 45A, 0.18Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT45M100J E145592

    Untitled

    Abstract: No abstract text available
    Text: APT45M100J 1000V, 45A, 0.18Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT45M100J E145592 APT45M100J OT-227