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    MOSFET CHARACTERSTICS Search Results

    MOSFET CHARACTERSTICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET CHARACTERSTICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA-541

    Abstract: F7101 IRF7101 IRF7601 MS-012AA
    Text: PD - 95202 IRF7402PbF Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Lead-Free Description HEXFET Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 20V


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    PDF IRF7402PbF EIA-481 EIA-541. EIA-541 F7101 IRF7101 IRF7601 MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: PD - 95202 IRF7402PbF Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Lead-Free Description HEXFET Power MOSFET A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V


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    PDF IRF7402PbF EIA-481 EIA-541.

    EIA-541

    Abstract: IRF7601
    Text: PD - 96071A IRF7402UPbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Lead-Free A A D S 1 8 S 2 7 D S 3 6 D G 4 5


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    PDF 6071A IRF7402UPbF EIA-481 EIA-541. EIA-541 IRF7601

    irf760

    Abstract: No abstract text available
    Text: PD - 93851 IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω


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    PDF IRF7402 irf760

    IRF7402

    Abstract: IRF7601
    Text: PD - 93851A IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω


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    PDF 3851A IRF7402 IRF7402 IRF7601

    Untitled

    Abstract: No abstract text available
    Text: PD - 93851A IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω


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    PDF 3851A IRF7402

    Untitled

    Abstract: No abstract text available
    Text: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance


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    PDF ICE47N60W 250uA 187nC O-247 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •


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    PDF TPS54290, TPS54291, TPS54292 SLUS973 TPS54290 TPS54291 TPS54290 TPS54291

    MPF 120

    Abstract: TC429
    Text: TC429 6A Single High-Speed, CMOS Power MOSFET Driver Features General Description • High Peak Output Current: 6A • Wide Input Supply Voltage Operating Range: - 7V to 18V • High-Impedance CMOS Logic Input • Logic Input Threshold Independent of Supply


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    PDF TC429 TC429 features778-366 DS21416D-page MPF 120

    Untitled

    Abstract: No abstract text available
    Text: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •


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    PDF TPS54290, TPS54291, TPS54292 SLUS973 TPS54290 TPS54291 TPS54290 TPS54291

    TC429CPA

    Abstract: for Push-Pull TL494 Power Supply TL494 TC426 TC429 tl494 24v TL494 pin details ,tl494 application notes tc4427 5v dc power supply with TL494
    Text: M TC429 6A Single High-Speed, CMOS Power MOSFET Driver Features General Description • High Peak Output Current: 6A • Wide Input Supply Voltage Operating Range: - 7V to 18V • High-Impedance CMOS Logic Input • Logic Input Threshold Independent of Supply


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    PDF TC429 TC429 DK-2750 D-85737 DS21416C-page TC429CPA for Push-Pull TL494 Power Supply TL494 TC426 tl494 24v TL494 pin details ,tl494 application notes tc4427 5v dc power supply with TL494

    F 0513A

    Abstract: No abstract text available
    Text: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •


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    PDF TPS54290, TPS54291, TPS54292 SLUS973 TPS54290 TPS54291 TPS54290 TPS54291 F 0513A

    TPS5429x

    Abstract: TPS54290 TPS54290PWP TPS54290PWPR TPS54291PWP TPS54291PWPR TPS54292 0513a
    Text: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •


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    PDF TPS54290, TPS54291, TPS54292 SLUS973 TPS54290 TPS54291 TPS54290 TPS54291 TPS5429x TPS54290PWP TPS54290PWPR TPS54291PWP TPS54291PWPR TPS54292 0513a

    F 0513A

    Abstract: TPS54290PWPR TPS54290 TPS54290PWP TPS54291PWP TPS54291PWPR TPS54292 MSS1048-332L 0513a
    Text: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •


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    PDF TPS54290, TPS54291, TPS54292 SLUS973 TPS54290 TPS54291 TPS54290 TPS54291 F 0513A TPS54290PWPR TPS54290PWP TPS54291PWP TPS54291PWPR TPS54292 MSS1048-332L 0513a

    Untitled

    Abstract: No abstract text available
    Text: M TC429 6A Single High-Speed, CMOS Power MOSFET Driver Features General Description • High Peak Output Current: 6A • Wide Input Supply Voltage Operating Range: - 7V to 18V • High-Impedance CMOS Logic Input • Logic Input Threshold Independent of Supply


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    PDF TC429 TC429 DK-2750 D-85737 DS21416C-page

    Untitled

    Abstract: No abstract text available
    Text: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •


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    PDF TPS54290, TPS54291, TPS54292 SLUS973 TPS54290 TPS54291 TPS54290 TPS54291

    TPS54290

    Abstract: TPS54290PWP TPS54290PWPR TPS54291PWP TPS54291PWPR TPS54292
    Text: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •


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    PDF TPS54290, TPS54291, TPS54292 SLUS973 TPS54290 TPS54291 TPS54290 TPS54291 TPS54290PWP TPS54290PWPR TPS54291PWP TPS54291PWPR TPS54292

    siemens igbt chip

    Abstract: Semiconductor Group igbt break resistor in igbt bup 314 siemens igbt application note
    Text: IGBT Insulated Gate Bipolar Transistor 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional


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    Back-Light driver 6pin

    Abstract: PIC8313
    Text: PIC8313 High Efficiency, Const Current WLED Driver FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ On board power MOSFET Drives up to 4 strings of parallel LEDs Up to 87% efficiency 1.46MHz Fixed switching frequency Open load shutdown Low 250mV feedback voltage


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    PDF PIC8313 46MHz 250mV PIC8313 300mV) 250mV Dhaka-1212, Back-Light driver 6pin

    PS60N60

    Abstract: MOSFET 60AMP POWER TRANSISTOR 60amp TRANSISTOR MOSFET 60AMP
    Text: E L E C T R O N I C PS60N60 N-Channel Enhancement Mode Field Effect Transistor - 60Amp 60Volt □ Application -Servomotor control -Power MOSFET gate drivers -Other switching applications □ Circuit □ Feature -Small surface mounting type D -High density cell design for low RDS ON


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    PDF PS60N60 60Amp 60Volt PS60N60 MOSFET 60AMP POWER TRANSISTOR 60amp TRANSISTOR MOSFET 60AMP

    PS75N75

    Abstract: MOSFET MOSFET CHARACTERSTICS
    Text: E L E C T R O N I C PS75N75 N-Channel Enhancement Mode Field Effect Transistor - 75Amp 75Volt □ Application -Servomotor control -Power MOSFET gate drivers -Other switching applications □ Circuit □ Feature -Small surface mounting type D -High density cell design for low RDS ON


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    PDF PS75N75 75Amp 75Volt PS75N75 MOSFET MOSFET CHARACTERSTICS

    Power IC

    Abstract: MOSFET CHARACTERSTICS PS1518 TSOT23 adjustable zero span amplifier ic
    Text: PS1518 High Efficiency, Fixed Frequency WLED Driver FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ On Board Power MOSFET Drives up to 8 Series White LEDs Up to 87% Efficiency Over 645 KHz Fixed Switching Frequency Open Load Shutdown Low 100mV Feedback Voltage Soft Start/PWM Dimming


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    PDF PS1518 100mV 6L-SOT26 PS1518 Power IC MOSFET CHARACTERSTICS TSOT23 adjustable zero span amplifier ic

    Untitled

    Abstract: No abstract text available
    Text: ICE47N65W Product Summary ID N-Channel Enhancement Mode MOSFET 47A Max V BR DSS ID = 1mA 650V Min rDS(ON) VGS = 10V 0.063Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


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    PDF ICE47N65W 187nC O-247 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE20N170 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


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    PDF ICE20N170 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00