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    MOSFET DYNAMIC PARAMETERS Search Results

    MOSFET DYNAMIC PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET DYNAMIC PARAMETERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance


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    PDF PE4141 PE4141

    marking code 8 lead msop package analog devices

    Abstract: marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking pe4141 marking code 8 lead msop package
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance


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    PDF PE4141 PE4141 marking code 8 lead msop package analog devices marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking marking code 8 lead msop package

    Yaesu

    Abstract: marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable


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    PDF PE4141 PE4141 Yaesu marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices

    PE4141

    Abstract: No abstract text available
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance


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    PDF PE4141 PE4141

    Inverter IRF1404

    Abstract: IRF1404 FET IRF1404 static characteristics of mosfet amp mosfet schematic circuit MOSFET dynamic parameters 3 phase mosfet drive schematic AN1040 bach AN-1040
    Text: Application Note AN-1040 System Simulation Using Power MOSFET QuasiDynamic Model Table of Contents Page Objective: To examine the Quasi-Dynamic model of power MOSFET and its effects on device thermal response . 1


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    PDF AN-1040 Assure2000 Inverter IRF1404 IRF1404 FET IRF1404 static characteristics of mosfet amp mosfet schematic circuit MOSFET dynamic parameters 3 phase mosfet drive schematic AN1040 bach AN-1040

    forsythe

    Abstract: INT-936 IRFP150 AN-941
    Text: Index AN- 941 v.Int PARALLELING HEXFET POWER MOSFETs (HEXFET Power MOSFET is the trademark for International Rectifier Power MOSFETs) Summary: • • • • • General guidelines Steady state sharing Dynamic sharing at turn-on Dynamic sharing at turn-off


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    forsythe

    Abstract: AN941 INT-936 how mosfets connect parallel IRFP150 IRFP150 equivalent
    Text: AN- 941 v.Int PARALLELING HEXFET POWER MOSFETs (HEXFET Power MOSFET is the trademark for International Rectifier Power MOSFETs) Summary: • • • • • General guidelines Steady state sharing Dynamic sharing at turn-on Dynamic sharing at turn-off Related topics


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    PDF

    AUFR5410

    Abstract: AUIRFR5410
    Text: PD - 96344 AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


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    PDF AUIRFR5410 -100V AUFR5410 AUIRFR5410

    mosfet SPICE MODEL

    Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
    Text: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET


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    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description The PE4140 is an ultra-high linearity, UltraCMOS™ passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad


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    PDF PE4140 PE4140

    AUIRF7103Q

    Abstract: No abstract text available
    Text: AUTOMOTIVE GRADE AUIRF7103Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* S1


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    PDF AUIRF7103Q AUIRF7103Q

    617DB-1024

    Abstract: PE4140G-06DFN balun diode mixer ETC1,6-4-2-3 ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK 4239 mosfet
    Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with


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    PDF PE4140 PE4140 617DB-1024 PE4140G-06DFN balun diode mixer ETC1,6-4-2-3 ETC1-1-13 PE4140-06DFN PE4140-EK 4239 mosfet

    AUFR5410

    Abstract: No abstract text available
    Text: PD - 96344 AUTOMOTIVE GRADE AUIRFR5410 Features ● ● ● ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated


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    PDF AUIRFR5410 -100V AUFR5410

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with


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    PDF PE4140 PE4140

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with


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    PDF PE4140 PE4140

    617DB-1024

    Abstract: ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK PE4140G-06DFN
    Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with


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    PDF PE4140 PE4140 617DB-1024 ETC1-1-13 PE4140-06DFN PE4140-EK PE4140G-06DFN

    AUFR5410

    Abstract: No abstract text available
    Text: PD - 96344 AUTOMOTIVE GRADE AUIRFR5410 Features ● ● ● ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated


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    PDF AUIRFR5410 -100V AUFR5410

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with


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    PDF PE4140 PE4140

    OP103

    Abstract: F7101 IRF7413
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1330A IRF7413 PRELIMINARY HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description


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    PDF IRF7413 OP103 F7101 IRF7413

    Mixers

    Abstract: PE4140
    Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with


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    PDF PE4140 PE4140 Mixers

    AUIRF9Z34

    Abstract: 290A
    Text: PD - 97627 AUTOMOTIVE GRADE AUIRF9Z34N HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


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    PDF AUIRF9Z34N AUIRF9Z34 290A

    f7304

    Abstract: 97653A AUIRF7304Q
    Text: PD - 97653A AUTOMOTIVE GRADE AUIRF7304Q Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Dynamic dV/dT Rating Logic Level 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant


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    PDF 7653A AUIRF7304Q f7304 97653A AUIRF7304Q

    AUIRF7103Q

    Abstract: No abstract text available
    Text: PD - 97643 AUTOMOTIVE GRADE AUIRF7103Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified*


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    PDF AUIRF7103Q AUIRF7103Q

    AUIRF9Z34N

    Abstract: No abstract text available
    Text: PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


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    PDF 7627A AUIRF9Z34N AUIRF9Z34N