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    MOSFET IRFI540 Search Results

    MOSFET IRFI540 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRFI540 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 PDF

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A PDF

    IRF540N

    Abstract: IRFI540N IRFI840G 4.5V TO 100V INPUT REGULATOR
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1361 IRFI540N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 100V


    Original     		IRFI540N IRF540N IRFI540N IRFI840G 4.5V TO 100V INPUT REGULATOR PDF

    b 1370

    Abstract: IRFI540N ISD 1400 d IRF540N 4.5v to 100v input regulator
    Text: PD - 9.1361A IRFI540N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G Description ID = 20A


    Original     		IRFI540N O-220 b 1370 IRFI540N ISD 1400 d IRF540N 4.5v to 100v input regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1361A IRFI540N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G Description ID = 20A


    Original     		IRFI540N O-220 additiona245, PDF

    b 1370

    Abstract: 4.5v to 100v input regulator IRF540N IRFI540N
    Text: PD - 9.1361A IRFI540N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G Description ID = 20A


    Original     		IRFI540N O-220 b 1370 4.5v to 100v input regulator IRF540N IRFI540N PDF

    IRFI540N

    Abstract: IRF540N IRFI840G
    Text: PD - 9.1361 IRFI540N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 100V RDS on = 0.052Ω G Description ID = 18A


    Original     		IRFI540N O-220 IRFI540N IRF540N IRFI840G PDF

    IRFI540G

    Abstract: SiHFI540G SiHFI540G-E3 91144
    Text: IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		IRFI540G, SiHFI540G O-220 18-Jul-08 IRFI540G SiHFI540G-E3 91144 PDF

    SiHFI540G

    Abstract: No abstract text available
    Text: IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		IRFI540G, SiHFI540G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFI540G

    Abstract: SiHFI540G
    Text: IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		IRFI540G, SiHFI540G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRFI540G PDF

    IRFI540G

    Abstract: SiHFI540G SiHFI540G-E3
    Text: IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		IRFI540G, SiHFI540G O-220 18-Jul-08 IRFI540G SiHFI540G-E3 PDF

    IRFI540G

    Abstract: SiHFI540G
    Text: IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		IRFI540G, SiHFI540G O-220 11-Mar-11 IRFI540G PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFI540G Power MOSFET FEATURES D TO-220 FULLPAK • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI540G O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94833 IRFI540NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.052Ω G Description ID = 20A


    Original     		IRFI540NPbF O-220 I840G PDF

    IRFI540G

    Abstract: SiHFI540G
    Text: IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		IRFI540G, SiHFI540G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI540G PDF

    equivalent of irf540n

    Abstract: IRF540 IRF540N irf540n or equivalent irf540N equivalent
    Text: PD - 94833 IRFI540NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.052Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		IRFI540NPbF O-220 IRF540N I840G equivalent of irf540n IRF540 irf540n or equivalent irf540N equivalent PDF

    equivalent of irf540n

    Abstract: IRF540N 4.5V to 100V input regulator IRFI540NPBF
    Text: PD - 94833 IRFI540NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.052Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		IRFI540NPbF O-220 I840G equivalent of irf540n IRF540N 4.5V to 100V input regulator IRFI540NPBF PDF

    equivalent of irf540n

    Abstract: IRF540N 4.5V to 100V input regulator
    Text: PD - 94833 IRFI540NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.052Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		IRFI540NPbF O-220 I840G equivalent of irf540n IRF540N 4.5V to 100V input regulator PDF

    MOSFET IRFI540

    Abstract: irfW540a
    Text: IRFW/I540A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS on = 0.052 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 28 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK n 175℃ Operating Temperature


    Original     		IRFW/I540A Dissipa92 O-262 MOSFET IRFI540 irfW540a PDF

    SSI5N60A

    Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
    Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -


    Original     		O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    SiHFI540G

    Abstract: 4013 n AN609 IRFI540G
    Text: IRFI540G_RC, SiHFI540G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFI540G SiHFI540G AN609, 20-Apr-10 4013 n AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1361A International TOR Rectifier IRFI540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated V dss = 100 V


    OCR Scan     		IRFI540N PDF

    IRFI540G

    Abstract: 1RFI540G
    Text: International im i Rectifier PD-9.643A IRFI540G HEXFET Power MOSFET • • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4,8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance D


    OCR Scan     		IRFI540G O-220 100tain 1RFI540G PDF