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    MOSFET LOW IDSS Search Results

    MOSFET LOW IDSS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET LOW IDSS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		PDF US6M11 R0039A

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		PDF US6M11 R0039A

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode.


    Original     		PDF US6M11 R0039A

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)


    Original     		PDF R0039A

    w503

    Abstract: D2502 FW503 MCH3306 SBS004 Schottky Barrier 3A ENN7312
    Text: Ordering number : ENN7312 FW503 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW503 DC / DC Converter Applications Composite type with a low ON-resistance, ultrahighunit : mm speed switching, low voltage drive, P-channel 2210 MOSFET and a short reverse recovery time, low


    Original     		PDF ENN7312 FW503 FW503 MCH3306 SBS004 FW503] w503 D2502 Schottky Barrier 3A ENN7312

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET zDimensions Unit : mm TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)


    Original     		PDF R0039A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT2N10 Power MOSFET 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET N-CHANNEL  DESCRIPTION The UTC UTT2N10 is a complementary enhancement mode MOSFET, it uses UTC advanced technology to provide customers low on resistance, low gate charge and low threshold voltage.


    Original     		PDF UTT2N10 UTT2N10 UTT2N10G-AA3-R OT-223 QW-R502-B19

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed This MOSFET has been designed to minimize the on-state


    Original     		PDF 2N7002A 200mA AEC-Q101 DS31360

    N mosfet 250v 600A

    Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
    Text: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?


    Original     		PDF QJQ0224005 FS40SM-5 N mosfet 250v 600A mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M02


    Original     		PDF R0039A

    UTC 30N06

    Abstract: 30N06 30N06L-TA3-T 30N06L mosfet TEST diode t2 4a 30N06-TA3-T 30N06-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		PDF 30N06 30N06 30N06L QW-R502-087 UTC 30N06 30N06L-TA3-T 30N06L mosfet TEST diode t2 4a 30N06-TA3-T 30N06-TF3-T

    30N06L-TA3-T

    Abstract: 30N06 mosfet to-220f 60v
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		PDF 30N06 O-252 30N06 O-220 O-220F QW-R502-087 30N06L-TA3-T mosfet to-220f 60v

    UTT30N06L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		PDF UTT30N06 UTT30N06 QW-R502-637 UTT30N06L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		PDF UTT30N06 UTT30N06 QW-R502-637

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		PDF 30N06 30N06 QW-R502-087

    EIA-541

    Abstract: IRF7835
    Text: PD - 96080A IRF7835UPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low Qrr l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance


    Original     		PDF 6080A IRF7835UPbF EIA-481 EIA-541. EIA-541 IRF7835

    N mosfet 250v 600A

    Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
    Text: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •


    Original     		PDF QJQ0220001 FS40SM-5 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet QJQ0220001 mosfet low idss

    2sk3271

    Abstract: MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874
    Text: 2SK3271-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3P Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3271-01 2sk3271 MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874

    POWER MOSFET

    Abstract: mosfet power amplifier 2SK3273-01MR mosfet low vgs
    Text: 2SK3273-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3273-01MR O-220F POWER MOSFET mosfet power amplifier 2SK3273-01MR mosfet low vgs

    POWER MOSFET

    Abstract: power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET
    Text: 2SK3270-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3270-01 O-220AB -51MHz POWER MOSFET power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		PDF 30N06V-Q 30N06V-Q 30N06VL-TM3-T 30N06VG-TM3-T O-251 QW-R502-A29.

    30N06L-TA3-T

    Abstract: 30n06l UTC 30N06 30N06 30N06-TA3-T 30N06-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		PDF 30N06 O-220 30N06 O-220F QW-R502-087 30N06L-TA3-T 30n06l UTC 30N06 30N06-TA3-T 30N06-TF3-T

    TA 8403 A

    Abstract: w507 FW507 MCH3312 SB1003M
    Text: FW507 Ordering number : ENN8403 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW507 General-Purpose Switching Device Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and


    Original     		PDF FW507 ENN8403 FW507 MCH3312 SB1003M TA 8403 A w507

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 TO-252 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		PDF 30N06 O-252 30N06 O-220 O-22at QW-R502-087